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IS49RL36320-083FBLI

DDR DRAM,

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

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器件参数
参数名称
属性值
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
LBGA,
Reach Compliance Code
unknown
访问模式
MULTI BANK PAGE BURST
其他特性
AUTO REFRESH
JESD-30 代码
S-PBGA-B168
长度
13.5 mm
内存密度
1207959552 bit
内存集成电路类型
DDR DRAM
内存宽度
36
功能数量
1
端口数量
1
端子数量
168
字数
33554432 words
字数代码
32000000
工作模式
SYNCHRONOUS
最高工作温度
95 °C
最低工作温度
-40 °C
组织
32MX36
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装形状
SQUARE
封装形式
GRID ARRAY, LOW PROFILE
座面最大高度
1.25 mm
最大供电电压 (Vsup)
1.42 V
最小供电电压 (Vsup)
1.28 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
宽度
13.5 mm
文档预览
1Gb: x18, x36 RLDRAM 3
Features
RLDRAM 3
Features
IS49RL18640-4 Meg x 18 x 16 Banks
IS49RL36320–2 Meg x 36 x 16 Banks
Options
• Clock cycle and
t
RC timing
1200
MHz DDR operation (2400 Mb/s/ball
data rate)
• Organization
64 Meg x 18, and 32 Meg x 36 common I/O (CIO)
16 banks
• 1.2V center-terminated push/pull I/O
2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
(optional 1.35V V
DDQ
for 2400 operation only).
• SDR addressing
• Programmable READ/WRITE latency (RL/WL) and
burst length
• Data mask for WRITE commands
• Fr
x,
DK
x#)
and output data clocks (QK
x,
QK
x#)
• On-die DLL generates CK edge-aligned data and
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
40 Ω or 60 Ω matched
impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200–1200 MHz)
Reduced
cycle time (
t
RC (MIN) = 6.67 - 8ns)
0.83
ns and
t
RC (MIN) =
6.67ns
(RL3-2400)
for -083F
0.83
ns and
t
RC (MIN) =
7.5ns
(RL3-2400)
for -083E
0.93
ns and
t
RC (MIN) =
7.5ns
(RL3-2133)
for -093F
0.93
ns and
t
RC (MIN) =
8ns
(RL3-2133)
for -093E
– 1.07ns and
t
RC (MIN) =
8ns
(RL3-1866)
for -107E
- 64 Meg x 18
- 32 Meg x 36
Operating Temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
Package
– 168-ball FBGA (Pb-free)
• READ training register
• Multiplexed and non-multiplexed addressing capa-
bilities
• Mirror function
• Output driver and ODT calibration
Post Package Repar - 1 row per half bank
• JTAG interface (IEEE 1149.1-2001)
Copyright © 2019 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specifica on and its products at any me without
no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the
latest version of this device specifica on before relying on any published informa on and before placing orders for prodsu.c t
Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effec veness. Products are not authorized for use in such
applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
www.issi.com
Rev.00C
09/18/2019
1
1Gb: x18, x36 RLDRAM 3
Features
Figure 1: 1Gb RLDRAM
®
3 Part Numbers
Example Part Number: IS49RL18640-083EBLI
-
IS49RL
Speed Package Temp
Temperature
64 Meg x 18
32 Meg x 36
Speed Grade
-083F
-083E
-093F
-093E
-107E
t
CK
t
CK
t
CK
t
CK
t
CK
18640
36320
Commercial
Industrial
None
I
Package
168-ball BGA (Pb-free)
= 0.83ns (6.67ns
t
RC)
= 0.83ns (7.5ns
t
RC)
= 0.93ns (7.5ns
t
RC)
= 0.93ns (8ns
t
RC)
= 1.07ns (8ns
t
RC)
BL
www.issi.com
Rev.00C
09/18/2019
2
1Gb
: x18, x36 RLDRAM 3
Contents
Contents
General Description .........................................................................................................................................
9
General Notes ..............................................................................................................................................
9
State Diagram ................................................................................................................................................
10
Functional Block Diagrams ............................................................................................................................. 11
Ball Assignments and Descriptions ................................................................................................................. 13
Electrical Characteristics – I
DD
Specifications .................................................................................................. 17
Electrical Specifications – Absolute Ratings and I/O Capacitance .....................................................................
20
Absolute Maximum Ratings ........................................................................................................................
20
Input/Output Capacitance ..........................................................................................................................
21
AC and DC Operating Conditions .................................................................................................................... 22
AC Overshoot/Undershoot Specifications .................................................................................................... 23
Slew Rate Definitions for Single-Ended Input Signals ................................................................................... 27
Slew Rate Definitions for Differential Input Signals ...................................................................................... 29
ODT Characteristics .......................................................................................................................................
30
ODT Resistors ............................................................................................................................................
30
ODT Sensitivity ..........................................................................................................................................
32
Output Driver Impedance ...............................................................................................................................
33
Output Driver Sensitivity ............................................................................................................................
35
Output Characteristics and Operating Conditions ............................................................................................
36
Reference Output Load ...............................................................................................................................
39
Slew Rate Definitions for Single-Ended Output Signals .....................................................................................
40
Slew Rate Definitions for Differential Output Signals ........................................................................................
41
Speed Bin Tables ............................................................................................................................................
42
AC Electrical Characteristics ...........................................................................................................................
43
Temperature and Thermal Impedance Characteristics .....................................................................................
49
Command and Address Setup, Hold, and Derating ...........................................................................................
51
Data Setup, Hold, and Derating .......................................................................................................................
58
Commands ....................................................................................................................................................
65
MODE REGISTER SET (MRS) Command .........................................................................................................
66
Mode Register 0 (MR0) ....................................................................................................................................
67
t
RC .............................................................................................................................................................
68
Data Latency ..............................................................................................................................................
68
DLL Enable/Disable ...................................................................................................................................
68
Address Multiplexing ..................................................................................................................................
69
Mode Register 1 (MR1) ....................................................................................................................................
70
Output Drive Impedance ............................................................................................................................
70
DQ On-Die Termination (ODT) ...................................................................................................................
71
DLL Reset ...................................................................................................................................................
71
ZQ Calibration ............................................................................................................................................
71
ZQ Calibration Long ...................................................................................................................................
72
ZQ Calibration Short ...................................................................................................................................
72
AUTO REFRESH Protocol ............................................................................................................................
73
Burst Length (BL) .......................................................................................................................................
73
Mode Register 2 (MR2) ....................................................................................................................................
73
READ Training Register (RTR) .....................................................................................................................
75
WRITE Protocol ..........................................................................................................................................
76
WRITE Command ..........................................................................................................................................
76
Multibank WRITE .......................................................................................................................................
76
Post Package Repair – PPR .............................................................................................................................. 79
PPR Row Repair Sequence .......................................................................................................................... 79
READ Command ............................................................................................................................................
81
www.issi.com
Rev.00C
09/18/2019
3
1Gb: x18, x36 RLDRAM 3
Contents
............................................................................................................................
AUTO REFRESH Command
............................................................................................................................
INITIALIZATION Operation
WRITE Operation ...............................................................................................................................................
READ Operation .................................................................................................................................................
..............................................................................................................................
AUTO REFRESH Operation
RESET Operation .................................................................................................................................................
Mirror Function ...................................................................................................................................................
81
84
87
91
94
97
99
Multiplexed Address Mode ...............................................................................................................................
100
........................................................................................... 105
Data Latency in Multiplexed Address Mode
............................................................................ 105
REFRESH Command in Multiplexed Address Mode
....................................................................................................
IEEE 1149.1 Serial Boundary Scan (JTAG)
Disabling the JTAG Feature .........................................................................................................................
Test Access Port (TAP) ..................................................................................................................................
TAP Controller ...............................................................................................................................................
Performing a TAP RESET ..............................................................................................................................
TAP Registers ..................................................................................................................................................
TAP Instruction Set ........................................................................................................................................
109
109
109
110
112
112
113
Ordering Information
............................................................................................................ ..121
Package Dimensions ........................................................................................................... 122
www.issi.com
Rev.00C
09/18/2019
4
1Gb:
x18, x36 RLDRAM 3
Figures
List of Figures
Figure 1:
Figure 2:
Figure 3:
Figure
4:
1Gb
RLDRAM
®
3 Part Numbers .............................................................................. ....................... 2
Simplified State Diagram ..................................................................................................................10
64
Meg x 18 Functional Block Diagram ............................................................................................. 11
32
Meg x 36 Functional Block Diagram ............................................................................................. 13
Figure
5:
Single-Ended Input Signal ............................................................................................................... 22
Figure
6:
Overshoot ....................................................................................................................................... 23
Figure
7:
Undershoot .................................................................................................................................... 23
Figure
8:
V
IX
for Differential Signals ................................................................................................................ 24
Figure
9:
Single-Ended Requirements for Differential Signals ........................................................................ 25
Figure
10:
Definition of Differential AC Swing and
t
DVAC ................................................................................26
Figure
11:
Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 27
Figure 12: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 27
Figure 13: Nominal Differential Input Slew Rate Definition for CK, CK#, DKx, and DKx# .................................. 28
Figure 14: ODT Levels and I-V Characteristics ................................................................................................
29
Figure 15: Output Driver ................................................................................................................................
3
2
Figure 16: DQ Output Signal ..........................................................................................................................
37
Figure 17: Differential Output Signal ..............................................................................................................
38
Figure 18: Reference Output Load for AC Timing and Output Slew Rate ...........................................................
38
Figure 19: Nominal Slew Rate Definition for Single-Ended Output Signals .......................................................
39
Figure 20: Nominal Differential Output Slew Rate Definition for QKx, QKx# .....................................................
40
Figure 21: Example Temperature Test Point Location ......................................................................................
49
Figure 22: Nominal Slew Rate and
t
VAC for
t
IS (Command and Address - Clock) ...............................................
53
Figure 23: Nominal Slew Rate for
t
IH (Command and Address - Clock) ............................................................
54
Figure 24: Tangent Line for
t
IS (Command and Address - Clock) ......................................................................
55
Figure 25: Tangent Line for
t
IH (Command and Address - Clock) .....................................................................
56
Figure 26: Nominal Slew Rate and
t
VAC for
t
DS (DQ - Strobe) ..........................................................................
60
Figure 27: Nominal Slew Rate for
t
DH (DQ - Strobe) ........................................................................................
61
Figure 28: Tangent Line for
t
DS (DQ - Strobe) .................................................................................................
62
Figure 29: Tangent Line for
t
DH (DQ - Strobe) ................................................................................................
63
Figure 30: MRS Command Protocol ...............................................................................................................
65
Figure 31: MR0 Definition for Non-Multiplexed Address Mode ........................................................................
66
Figure 32: MR1 Definition for Non-Multiplexed Address Mode ........................................................................
69
Figure 33: ZQ Calibration Timing (ZQCL and ZQCS) .......................................................................................
71
Figure 34: Read Burst Lengths ........................................................................................................................
73
Figure 35: MR2 Definition for Non-Multiplexed Address Mode ........................................................................
74
Figure 36: READ Training Function - Back-to-Back Readout ............................................................................
76
Figure
37:
WRITE Command .........................................................................................................................
77
Figure
38:
Entry, Repair, and Exit Timing Diagram ........................................................................................
80
Figure 39:
Figure
40:
Figure 41:
Figure 42:
Figure 43:
Figure 44:
Figure 45:
Figure 46:
Figure 47:
Figure 48:
Figure 49:
Figure
50:
Figure 51:
READ Command ...........................................................................................................................
Bank Address-Controlled AUTO REFRESH Command .....................................................................
Multibank AUTO REFRESH Command ...........................................................................................
Power-Up/Initialization Sequence ...............................................................................................
WRITE Burst .................................................................................................................................
Consecutive WRITE Bursts .............................................................................................................
WRITE-to-READ ............................................................................................................................
WRITE - DM Operation ..................................................................................................................
Consecutive Quad Bank WRITE Bursts ...........................................................................................
Interleaved READ and Quad Bank WRITE Bursts .............................................................................
Basic READ Burst ..........................................................................................................................
Consecutive READ Bursts (BL = 2) ..................................................................................................
Consecutive READ Bursts (BL = 4) ..................................................................................................
5
81
82
83
85
87
88
88
89
90
90
91
92
92
www.issi.com
Rev.00C
09/18/2019
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参数对比
与IS49RL36320-083FBLI相近的元器件有:IS49RL36320-093FBLI、IS49RL36320-093FBL、IS49RL36320-093EBL、IS49RL36320-093EBLI、IS49RL36320-083FBL、IS49RL36320-107EBL、IS49RL36320-107EBLI、IS49RL36320-083EBL、IS49RL36320-083EBLI。描述及对比如下:
型号 IS49RL36320-083FBLI IS49RL36320-093FBLI IS49RL36320-093FBL IS49RL36320-093EBL IS49RL36320-093EBLI IS49RL36320-083FBL IS49RL36320-107EBL IS49RL36320-107EBLI IS49RL36320-083EBL IS49RL36320-083EBLI
描述 DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM,
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
包装说明 LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow unknow
访问模式 MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
其他特性 AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH
JESD-30 代码 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168
长度 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm
内存密度 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bi 1207959552 bi
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 36 36 36 36 36 36 36 36 36 36
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 168 168 168 168 168 168 168 168 168 168
字数 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words
字数代码 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C
组织 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
座面最大高度 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm
最大供电电压 (Vsup) 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V
最小供电电压 (Vsup) 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL OTHER OTHER INDUSTRIAL OTHER OTHER INDUSTRIAL OTHER INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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