首页 > 器件类别 > 存储 > 存储

IS61LF102436B-7.5TQI

1MX36 CACHE SRAM, 7.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
QFP
包装说明
14 X 20 MM, 1.40 MM HEIGHT, TQFP-100
针数
100
Reach Compliance Code
compli
ECCN代码
3A991.B.2.A
最长访问时间
7.5 ns
最大时钟频率 (fCLK)
117 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
长度
20 mm
内存密度
37748736 bi
内存集成电路类型
CACHE SRAM
内存宽度
36
功能数量
1
端子数量
100
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1MX36
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.12 A
最小待机电流
3.14 V
最大压摆率
0.25 mA
最大供电电压 (Vsup)
3.465 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
文档预览
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
1M x 36, 2M x 18
36 Mb SYNCHRONOUS
FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VF: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVF: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-
pin PBGA packages
• Lead-free available
ADVANCED INFORMATION
OCTOBER 2012
DESCRIPTION
The 36Mb product family features high-speed, low-power
synchronous static
RAMs
designed to provide burstable,
high-performance memory for communication and network-
ing applications. The
IS61LF/VF102436B is organized as
1,048,476 words by 36 bits. The IS61LF/VF204818B
is
organized as 2,096,952 words by 18 bits. Fabricated with
ISSI
's advanced CMOS technology, the device integrates
a 2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. Byte write operation is performed by using byte write
enable (BWE)
input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/2/2012
1
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
BLOCK DIAGRAM
MODE
CLK
/CKE
/ADV
/ADSC
/ADSP
A0-x
x18: x=21
x36: x=20
BINARY
COUNTER
/CE
/CLR
20/21
Q0
A0
A0`
Q1
A1
A1`
D
ADDRESS
REGISTER
/CE
CLK
Q
18/19
1Mx36;
2Mx18
Memory Array
/GW
/BWE
/BW(a-x)
x18:x=b,
x32,x36:x=d
/CE
CE2
/CE2
D
Q
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
D
ENABLE
REGISTERS
Q
INPUT
REGISTER
CLK
OUTPUT
REGISTER
DQ(a-x)
x18:x=b,
x32,x36:x=d
ZZ
Power
Down
CLK
CLK
/OE
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/2/2012
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
165-PIN BGA
165-Ball, 13x15 mm BGA
119-PIN BGA
119-Ball, 14x22 mm BGA
BOTTOM VIEW
BOTTOM VIEW
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/2/2012
3
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
119 BGA PACKAGE PIN CONFIGURATION
1M
x
36 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
A
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
3
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
A
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWa-BWd
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous Address Status
Processor
Synchronous Address Status
Controller
Synchronous
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous
Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQd
DQPa-DQPd
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous
Output Enable
Asynchronous
Power Sleep Mode
Synchronous Burst Sequence
Selection
JTAG Pins
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/2/2012
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
119 BGA PACKAGE PIN CONFIGURATION
2M
x
18 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQb
NC
V
DDQ
NC
DQb
V
DDQ
NC
DQb
V
DDQ
DQb
NC
NC
NC
V
DDQ
2
A
A
A
NC
DQb
NC
DQb
NC
V
DD
DQb
NC
DQb
NC
DQPb
A
A
TMS
3
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPa
NC
DQa
NC
DQa
V
DD
NC
DQa
NC
DQa
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQa
V
DDQ
DQa
NC
V
DDQ
DQa
NC
V
DDQ
NC
DQa
NC
ZZ
V
DDQ
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWa-BWb
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous
Address Status Processor
Synchronous Address Status Controller
Synchronous
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous
Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQb
DQPa-DQPb
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous
Output Enable
Asynchronous Power Sleep Mode
Synchronous Burst Sequence
Selection
JTAG Pins
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
10/2/2012
5
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消