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IS61LF204818A

1M X 36 CACHE SRAM, 7.5 ns, PDSO100
1M × 36 高速缓存 静态随机存储器, 7.5 ns, PDSO100

器件类别:存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

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器件参数
参数名称
属性值
功能数量
1
端子数量
100
最大工作温度
85 Cel
最小工作温度
-40 Cel
最大供电/工作电压
3.46 V
最小供电/工作电压
3.14 V
额定供电电压
3.3 V
最大存取时间
7.5 ns
加工封装描述
铅 FREE, TQFP-100
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
工艺
CMOS
包装形状
矩形的
包装尺寸
SMALL OUTLINE, 低 PROFILE, SHRINK PITCH
表面贴装
Yes
端子形式
GULL WING
端子间距
0.6500 mm
端子涂层
MATTE 锡
端子位置
包装材料
塑料/环氧树脂
温度等级
INDUSTRIAL
内存宽度
36
组织
1M × 36
存储密度
3.77E7 deg
操作模式
同步
位数
1.05E6 words
位数
1M
内存IC类型
高速缓存 静态随机存储器
串行并行
并行
文档预览
IS61LF102436A IS61VF102436A
IS61LF204818A IS61VF204818A
1M x 36, 2M x 18
36Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LF: V
dd
3.3V + 5%,
V
ddq
3.3V/2.5V + 5%
VF: V
dd
2.5V + 5%,
V
ddq
2.5V + 5%
• JEDEC 100-Pin TQFP and 165-pin PBGA pack-
ages.
• Lead-free available
APRIL 2008
DESCRIPTION
The
ISSI
IS61LF/VF102436A and IS61LF/VF204818A
are high-speed, low-power synchronous static RAMs de-
signed to provide burstable, high-performance memory for
communication and networking applications. The IS61LF/
VF102436A is organized as 1,048,476 words by 36 bits.
The IS61LF/VF204818A is organized as 2M-words by 18
bits. Fabricated with
ISSI
's advanced CMOS technology,
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write en-
able (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
1
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
BLOCK DIAGRAM
MODE
CLK
CLK
Q0
A0
A0'
BINARY
COUNTER
ADV
ADSC
ADSP
CE
CLR
Q1
A1
A1'
1Mx36;
2Mx18;
MEMORY ARRAY
20/21
A
20/21
D
Q
18/19
ADDRESS
REGISTER
CE
CLK
36,
or 18
36,
or 18
GW
BWE
BW(a-d)
x18: a,b
x36: a-d
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
D
Q
CE
CE2
CE2
D
Q
2/4/8
ENABLE
REGISTER
CE
CLK
INPUT
REGISTERS
CLK
36,
or 18
DQa - DQd
OE
ZZ
POWER
DOWN
OE
2
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165-PIN BGA
165-Ball, 13x15 mm BGA
BOTTOM vIEW
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
3
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165 PBGA PACKAGE PIN CONFIGURATION
1M
x
36 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
2
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
A
3
CE
CE2
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
4
BWc
BWd
Vss
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
Vss
A
A
5
BWb
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
6
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
A
A
1
*
A
0
*
7
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
8
ADSC
OE
Vss
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
Vss
A
A
9
ADV
ADSP
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
Nc
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
10
A
A
Nc
DQb
DQb
DQb
DQb
Nc
dqa
dqa
dqa
dqa
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
dqa
dqa
dqa
dqa
A
A
NC DQPa
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
(Under Evaluation)
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2,
CE2
Pin Name
Address Inputs
Synchronous Burst Address
Inputs
Synchronous Burst Address
Advance.
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Symbol
BWE
OE
ZZ
MODE
NC
DQa-DQd
DQPa-Pd
V
dd
V
ddq
vss
Pin Name
Byte Write Enable
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Power Supply
Output Power Supply
Ground
BWx (x=a,b,c,d)
Synchronous Byte Write
Controls
4
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165 PBGA PACKAGE PIN CONFIGURATION
2M
x
18 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
MODE
2
A
A
NC
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
A
3
CE
CE2
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
4
BWb
NC
Vss
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
Vss
A
A
5
NC
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
6
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
A
A
1
*
A
0
*
7
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
8
ADSC
OE
Vss
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
Vss
A
A
9
ADV
ADSP
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
Nc
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
10
A
A
Nc
NC
NC
NC
NC
Nc
dqa
dqa
dqa
dqa
NC
A
A
11
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
Nc
Nc
Nc
Nc
NC
A
A
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
(Under Evaluation)
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2,
CE2
BWx (x=a,b)
Pin Name
Address Inputs
Synchronous Burst Address
Inputs
Synchronous Burst Address
Advance.
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write
Controls
Symbol
BWE
OE
ZZ
MODE
NC
DQa-DQd
DQPa-Pd
V
dd
V
ddq
vss
Pin Name
Byte Write Enable
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Power Supply
Output Power Supply
Ground
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
5
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