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IS61NLF102418B-6.5B2L

ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA119, BGA-119

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

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器件参数
参数名称
属性值
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
BGA,
Reach Compliance Code
unknow
最长访问时间
6.5 ns
其他特性
FLOW THROUGH
JESD-30 代码
R-PBGA-B119
长度
22 mm
内存密度
18874368 bi
内存集成电路类型
ZBT SRAM
内存宽度
18
功能数量
1
端子数量
119
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX18
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
座面最大高度
3.5 mm
最大供电电压 (Vsup)
3.465 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
宽度
14 mm
文档预览
IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
512K x36 and 1024K x18 18Mb, FLOW THROUGH 'NO WAIT' STATE
BUS SYNCHRONOUS SRAM
FEBRUARY 2014
ADVANCED INFORMATION
FEATURES
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address, data and
control
Interleaved or linear burst sequence control
using MODE input
Three chip enables for simple depth
expansion and address pipelining
Power Down mode
Common data inputs and data outputs
/CKE pin to enable clock and suspend
operation
JEDEC 100-pin QFP, 165-ball BGA and 119-
ball BGA packages
Power supply:
NLF: V
DD
3.3V (± 5%), V
DDQ
3.3V/2.5V (± 5%)
NVF: V
DD
2.5V (± 5%), V
DDQ
2.5V (± 5%)
NVVF: V
DD
1.8V (± 5%), V
DDQ
1.8V (± 5%)
JTAG Boundary Scan for BGA packages
Commercial, Industrial and Automotive
temperature support
Lead-free available
For leaded option, please contact ISSI.
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access
Time
Cycle time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
DESCRIPTION
The 18Meg product family features high-speed,
low-power synchronous static RAMs designed to
provide a burstable, high-performance, 'no wait'
state, device for networking and communications
applications. They are organized as 512K words
by 36 bits and 1024K words by 18 bits, fabricated
with
ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles
are eliminated when the bus switches from read
to write, or write to read. This device integrates a
2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single
monolithic circuit.
All synchronous inputs pass through registers are
controlled by a positive-edge-triggered single
clock input. Operations may be suspended and all
synchronous inputs ignored when Clock Enable,
/CKE is HIGH. In this state the internal device will
hold their previous values.
All Read, Write and Deselect cycles are initiated
by the ADV input. When the ADV is HIGH the
internal burst counter is incremented. New
external addresses can be loaded when ADV is
LOW.
Write cycles are internally self-timed and are
initiated by the rising edge of the clock inputs and
when /WE is LOW. Separate byte enables allow
individual bytes to be written.
A burst mode pin (MODE) defines the order of the
burst sequence. When tied HIGH, the interleaved
burst sequence is selected. When tied LOW, the
linear burst sequence is selected.
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
1
IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
BLOCK DIAGRAM
(X = a, b, c,d
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
2
IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
PIN CONFIGURATION
512K x 36, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWc
/BWd
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
/BWb
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
ADV
MODE
/CE,CE2,/CE2
/WE
/BWx (x=a-d)
/OE
DQx
DQPx
TCK,TDI,
TDO,TMS
ZZ
NC
V
DD
V
DDQ
V
SS
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Address Inputs
Synchronous Burst Address
Advance/Load
Burst Sequence Selection
Synchronous Chip Enable
Synchronous Read/Write Control
Input
Synchronous Byte Write Inputs
Output Enable
Data Inputs/Outputs
Parity Data I/O
JTAG Pins
Power Sleep Mode
No Connect
Power Supply
I/O Power Supply
Ground
Bottom View
165-Ball, 13 mm x 15mm BGA
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
3
IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
512K x 32, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWc
/BWd
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
/BWb
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
NC
NC
NC
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
NC
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
ADV
MODE
/CE,CE2,/CE2
/WE
/BWx (x=a-d)
/OE
DQx
TCK,TDI,
TDO,TMS
ZZ
NC
V
DD
V
DDQ
V
SS
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Address Inputs
Synchronous Burst Address
Advance/Load
Burst Sequence Selection
Synchronous Chip Enable
Synchronous Read/Write Control
Input
Synchronous Byte Write Inputs
Output Enable
Data Inputs/Outputs
JTAG Pins
Power Sleep Mode
No Connect
Power Supply
I/O Power Supply
Ground
Bottom View
165-Ball, 13 mm x 15mm BGA
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
4
IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
1024K x 18, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
NC
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
MODE
A
A
NC
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWb
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
NC
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
ADV
MODE
/CE,CE2,/CE2
/WE
/BWx (x=a-b)
/OE
DQx
DQPx
TCK,TDI,
TDO,TMS
ZZ
NC
V
DD
V
DDQ
V
SS
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Address Inputs
Synchronous Burst Address
Advance/Load
Burst Sequence Selection
Synchronous Chip Enable
Synchronous Read/Write Control
Input
Synchronous Byte Write Inputs
Output Enable
Data Inputs/Outputs
Parity Data I/O
JTAG Pins
Power Sleep Mode
No Connect
Power Supply
I/O Power Supply
Ground
Bottom View
165-Ball, 13 mm x 15mm BGA
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
5
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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