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IS61NLP25618A-250B2

ZBT SRAM, 256KX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
BGA
包装说明
BGA, BGA119,7X17,50
针数
119
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
2.6 ns
其他特性
PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)
250 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B119
JESD-609代码
e0
长度
22 mm
内存密度
4718592 bit
内存集成电路类型
ZBT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端子数量
119
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX18
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA119,7X17,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
座面最大高度
2.41 mm
最大待机电流
0.03 A
最小待机电流
3.14 V
最大压摆率
0.225 mA
最大供电电压 (Vsup)
3.465 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
128K x 32, 128K x 36, and 256K x 18
4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
SEPTEMBER 2007
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
DESCRIPTION
The 4 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 128K words by 32 bits, 128K words by 36
bits, and 256K words by 18 bits, fabricated with
ISSI
's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when
WE
is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-
ball PBGA packages
• Power supply:
NVP: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NLP: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-250
2.6
4
250
-200
3.1
5
200
Units
ns
ns
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
1
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
BLOCK DIAGRAM
x 32/x 36: A [0:16] or
x 18: A [0:17]
ADDRESS
REGISTER
A2-A16 or A2-A17
128Kx32;
128Kx36;
256Kx18
MEMORY ARRAY
K
DATA-IN
REGISTER
MODE
A0-A1
BURST
ADDRESS
COUNTER
A'0-A'1
CLK
CKE
CONTROL
LOGIC
K
WRITE
ADDRESS
REGISTER
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
CE
CE2
CE2
ADV
WE
BWŸ
X
OE
ZZ
DQx/DQPx
}
CONTROL
REGISTER
CONTROL
LOGIC
K
OUTPUT
REGISTER
BUFFER
(X=a,b,c,d or a,b)
32, 36 or 18
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
165-Ball, 13 mm x 15mm BGA
1 mm Ball Pitch, 11 x 15 Ball Array
Bottom View
119-Ball, 14 mm x 22 mm BGA
1 mm Ball Pitch, 7 x 17 Ball Array
Bottom View
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
3
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
PIN CONFIgURATION — 128K
x
36, 165-Ball PBgA (TOP VIEW)
1
2
3
4
5
6
7
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
CE
CE2
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
BWc
BWd
V
SS
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
SS
A
A
BWb
BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
NC
NC
CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
CKE
WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
NC
NC
8
9
NC
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC
A
ADV
OE
V
SS
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
SS
A
A
Note:
A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address Advance/
Load
WE
Synchronous Read/Write Control
Input
CLK
Synchronous Clock
CKE
Clock Enable
CE, CE2,
CE2 Synchronous Chip Enable
BWx (x=a-d)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
MODE
V
DD
NC
DQx
DQPx
V
DDQ
V
SS
Burst Sequence Selection
3.3V/2.5V Power Supply
No Connect
Data Inputs/Outputs
Parity Data I/O
Isolated output Power Supply
3.3V/2.5V
Ground
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
119-PIN
PBgA PACKAgE
CONFIGURATION
1
2
3
128K x 36 (TOP VIEW)
4
5
6
7
A
B
C
D
E
F
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
A
CE2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
NC
A
A
A
V
SS
V
SS
V
SS
BWc
V
SS
NC
V
SS
BWd
V
SS
V
SS
V
SS
MODE
A
NC
NC
ADV
V
DD
NC
CE
OE
NC
WE
V
DD
CLK
NC
CKE
A
1
*
A
0
*
V
DD
A
NC
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
NC
A
CE2
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
G
H
J
K
L
M
N
P
R
T
U
Note:
A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
WE
CLK
CKE
CE
CE2
CE2
BWx (x=a-d)
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address Advance/
Load
Synchronous Read/Write Control
Input
Synchronous Clock
Clock Enable
Synchronous Chip Select
Synchronous Chip Select
Synchronous Chip Select
Synchronous Byte Write Inputs
OE
ZZ
MODE
V
dd
V
SS
NC
DQa-DQd
DQPa-Pd
V
ddq
Output Enable
Power Sleep Mode
Burst Sequence Selection
Power Supply
Ground
No Connect
Data Inputs/Outputs
Parity Data I/O
Output Power Supply
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
09/10/07
5
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