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IS61NVF12832EC-7.5TQ

128K X 32 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LQFP-100

器件类别:存储    存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
14 X 20 MM, 1.40 MM HEIGHT, LQFP-100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
7.5 ns
最大时钟频率 (fCLK)
117 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
长度
20 mm
内存密度
4194304 bit
内存集成电路类型
ZBT SRAM
内存宽度
32
功能数量
1
端子数量
100
字数
131072 words
字数代码
128000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
128KX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
电源
2.5 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.035 A
最小待机电流
2.38 V
最大压摆率
0.21 mA
最大供电电压 (Vsup)
2.625 V
最小供电电压 (Vsup)
2.375 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
文档预览
IS61(4)NLF12836EC/IS61(4)NVF12836EC/IS61(4)NLF12832EC
IS61(4)NVF12832EC/IS61(4)NLF25618EC/IS61(4)NVF25618EC
128K x36/32 and 256K x18 4Mb, ECC, FLOW THROUGH 'NO WAIT'
STATE BUS SYNCHRONOUS SRAM
MARCH 2014
FEATURES
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address, data and
control
Interleaved or linear burst sequence control
using MODE input
Three chip enables for simple depth
expansion and address pipelining
Power Down mode
Common data inputs and data outputs
/CKE pin to enable clock and suspend
operation
JEDEC 100-pin QFP, 165-ball BGA and 119-
ball BGA packages
Power supply:
NLF: V
DD
3.3V (± 5%), V
DDQ
3.3V/2.5V (± 5%)
NVF: V
DD
2.5V (± 5%), V
DDQ
2.5V (± 5%)
JTAG Boundary Scan for BGA packages
Industrial and Automotive temperature support
Lead-free available
Error Detection and Error Correction
DESCRIPTION
The 4Mb product family features high-speed, low-
power synchronous static RAMs designed to
provide a burstable, high-performance, 'no wait'
state, device for networking and communications
applications. They are organized as 128K words
by 36 bits and 256K words by 18 bits, fabricated
with
ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles
are eliminated when the bus switches from read
to write, or write to read. This device integrates a
2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single
monolithic circuit.
All synchronous inputs pass through registers are
controlled by a positive-edge-triggered single
clock input. Operations may be suspended and all
synchronous inputs ignored when Clock Enable,
/CKE is HIGH. In this state the internal device will
hold their previous values.
All Read, Write and Deselect cycles are initiated
by the ADV input. When the ADV is HIGH the
internal burst counter is incremented. New
external addresses can be loaded when ADV is
LOW.
Write cycles are internally self-timed and are
initiated by the rising edge of the clock inputs and
when /WE is LOW. Separate byte enables allow
individual bytes to be written.
A burst mode pin (MODE) defines the order of the
burst sequence. When tied HIGH, the interleaved
burst sequence is selected. When tied LOW, the
linear burst sequence is selected.
-6.5
6.5
7.5
133
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle time
Frequency
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
03/26/2014
1
IS61(4)NLF12836EC/IS61(4)NVF12836EC/IS61(4)NLF12832EC
IS61(4)NVF12832EC/IS61(4)NLF25618EC/IS61(4)NVF25618EC
BLOCK DIAGRAM
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
03/26/2014
2
IS61(4)NLF12836EC/IS61(4)NVF12836EC/IS61(4)NLF12832EC
IS61(4)NVF12832EC/IS61(4)NLF25618EC/IS61(4)NVF25618EC
PIN CONFIGURATION
128K x 36, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWc
/BWd
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
/BWb
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
NC
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
/ADV
/CE,CE2,/CE2
/BWE
/BWx (x=a-d)
/OE
DQx
DQPx
MODE
ZZ
TCK,TDI,TDO,TMS
VDD
VDDQ
VSS
NC
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Synchronous Address Inputs
Synchronous Advance/Load
Synchronous Chip Enable
Synchronous Byte Write Enable
Synchronous Byte Write Inputs
Asynchronous Output Enable
Synchronous Data Inputs/Outputs
Synchronous Parity Data I/O
Burst Sequence Selection
Asynchronous Power Sleep Mode
JTAG Pins
Power Supply
I/O Power Supply
Ground
No Connect
Bottom View
165-Ball, 13 mm x 15mm BGA
11 x 15 Ball Array
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
03/26/2014
3
IS61(4)NLF12836EC/IS61(4)NVF12836EC/IS61(4)NLF12832EC
IS61(4)NVF12832EC/IS61(4)NLF25618EC/IS61(4)NVF25618EC
128K x 32, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWc
/BWd
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
/BWb
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
NC
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
NC
NC
NC
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
NC
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
/ADV
/CE,CE2,/CE2
/BWE
/BWx (x=a-d)
/OE
DQx
MODE
ZZ
TCK,TDI,TDO,TMS
VDD
VDDQ
VSS
NC
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Synchronous Address Inputs
Synchronous Advance/Load
Synchronous Chip Enable
Synchronous Byte Write Enable
Synchronous Byte Write Inputs
Asynchronous Output Enable
Synchronous Data Inputs/Outputs
Burst Sequence Selection
Asynchronous Power Sleep Mode
JTAG Pins
Power Supply
I/O Power Supply
Ground
No Connect
Bottom View
165-Ball, 13 mm x 15mm BGA
11 x 15 Ball Array
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
03/26/2014
4
IS61(4)NLF12836EC/IS61(4)NVF12836EC/IS61(4)NLF12832EC
IS61(4)NVF12832EC/IS61(4)NLF25618EC/IS61(4)NVF25618EC
256K x 18, 165-Ball BGA (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
9
10
11
NC
NC
NC
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
MODE
A
A
NC
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
NC
/CE
CE2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
/BWb
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
NC
/BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
/CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
/CKE
/WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
ADV
/OE
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
NC
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
/CKE
A0,A1
A
/ADV
/CE,CE2,/CE2
/BWE
/BWx (x=a-b)
/OE
DQx
DQPx
MODE
ZZ
TCK,TDI,TDO,TMS
VDD
VDDQ
VSS
NC
Pin Name
Synchronous Clock
Clock Enable
Synchronous Burst Address Inputs
Synchronous Address Inputs
Synchronous Advance/Load
Synchronous Chip Enable
Synchronous Byte Write Enable
Synchronous Byte Write Inputs
Asynchronous Output Enable
Synchronous Data Inputs/Outputs
Synchronous Parity Data I/O
Burst Sequence Selection
Asynchronous Power Sleep Mode
JTAG Pins
Power Supply
I/O Power Supply
Ground
No Connect
Bottom View
165-Ball, 13 mm x 15mm BGA
11 x 15 Ball Array
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
03/26/2014
5
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