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IS61NVF25636B-6.5B3I

ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, TFBGA-165

器件类别:存储    存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

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器件参数
参数名称
属性值
Objectid
8143497201
包装说明
TBGA,
Reach Compliance Code
unknown
Country Of Origin
Mainland China, Taiwan
ECCN代码
3A991.B.2.A
YTEOL
5.75
最长访问时间
6.5 ns
JESD-30 代码
R-PBGA-B165
长度
15 mm
内存密度
9437184 bit
内存集成电路类型
ZBT SRAM
内存宽度
36
功能数量
1
端子数量
165
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
256KX36
封装主体材料
PLASTIC/EPOXY
封装代码
TBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE
并行/串行
PARALLEL
座面最大高度
1.2 mm
最大供电电压 (Vsup)
2.625 V
最小供电电压 (Vsup)
2.375 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
宽度
13 mm
文档预览
IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
256K x 36 and 512K x 18
9Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin QFP, 119-ball BGA, and 165-
ball BGA packages
• Power supply:
NLF: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
NVF: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NVVF: V
dd
1.8V (± 5%), V
ddq
1.8V (± 5%)
• JTAG Boundary Scan for BGA packages
• Industrial temperature available
• Lead-free available
MAY 2016
DESCRIPTION
The 9 Meg product family features high-speed, low-power
synchronous static RAMs designed to provide a burstable,
high-performance, 'no wait' state, device for networking and
communications applications. They are organized as 256K
words by 36 bits and 512K words by 18 bits, fabricated
with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when
WE
is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
1
IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
BLOCK DIAGRAM
A0-17 ( A0-18)
A0-17(A0-18)
Address
Registers
MODE
ADV
A0-A1
K
CLK
Address
Registers
Burst Logic
K
A'0-A'1
256Kx36;
512Kx18
Memory Array
A2-17(A2-A18)
A0-17 ( A0-18)
Address
Registers
/CKE
Data-In
Register
K
Control register
/CE
CE2
/CE2
ADV
/WE
/BWx
(X=a,b,c,d or a,b)
Data-In
Register
Control Logic
K
/OE
ZZ
36(18)
DQx/DQPx
K
Output
Buffers
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
165-Ball, 13 mm x 15mm BGA
Bottom View
119-Ball, 14 mm x 22 mm BGA
Bottom View
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
3
IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
PIN CONFIGURATION — 256K
x
36, 165-Ball BGA (TOP VIEW)
1
2
3
4
5
6
7
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC
MODE
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
NC
NC
CE
CE2
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
BWc
BWd
V
SS
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
SS
A
A
BWb
BWa
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TdI
TMS
CE2
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1*
A0*
CKE
WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
OE
V
SS
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
dd
V
SS
A
A
9
A
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
NC
V
ddq
V
ddq
V
ddq
V
ddq
V
ddq
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC
A
Note:
A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address Advance/
Load
WE
Synchronous Read/Write Control Input
CLK
Synchronous Clock
CKE
Clock Enable
CE, CE2,
CE2 Synchronous Chip Enable
BWx
(x=a-d)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
MODE
TCK, TDI
TDO, TMS
V
DD
NC
DQx
DQPx
V
DDQ
V
SS
Burst Sequence Selection
JTAG Pins
Power Supply
No Connect
Data Inputs/Outputs
Parity Data I/O
I/O Power Supply
Ground
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
119-PIN
BGA PACKAGE
CONFIGURATION
1
2
3
256K x 36 (TOP VIEW)
4
5
6
7
A
B
C
D
E
F
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
A
CE2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
A
A
A
V
SS
V
SS
V
SS
BWc
V
SS
NC
V
SS
BWd
V
SS
V
SS
V
SS
MODE
A
TDI
NC
ADV
V
DD
NC
CE
OE
A
WE
V
DD
CLK
NC
CKE
A
1
*
A
0
*
V
DD
A
TCK
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
A
CE2
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
G
H
J
K
L
M
N
P
R
T
U
Note:
A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
WE
CLK
CKE
CE
CE2
CE2
BWx
(x=a-d)
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address Advance/
Load
Synchronous Read/Write Control Input
Synchronous Clock
Clock Enable
Synchronous Chip Select
Synchronous Chip Select
Synchronous Chip Select
Synchronous Byte Write Inputs
OE
ZZ
MODE
TCK, TDO
TMS, TDI
V
dd
V
SS
NC
DQa-DQd
DQPa-Pd
V
ddq
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
Power Supply
Ground
No Connect
Data Inputs/Outputs
Parity Data I/O
I/O Power Supply
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
5
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