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IS61VPS51236-166BI

Cache SRAM, 512KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
BGA
包装说明
PLASTIC, BGA-119
针数
119
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
3.5 ns
JESD-30 代码
R-PBGA-B119
JESD-609代码
e0
长度
22 mm
内存密度
18874368 bit
内存集成电路类型
CACHE SRAM
内存宽度
36
功能数量
1
端子数量
119
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX36
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
240
认证状态
Not Qualified
座面最大高度
2.41 mm
最大供电电压 (Vsup)
2.625 V
最小供电电压 (Vsup)
2.375 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
30
宽度
14 mm
Base Number Matches
1
文档预览
IS61VPS51232 IS61VPS51236 IS61VPS10018
512K x 32, 512K x 36, 1024K x 18
SYNCHRONOUS PIPELINED,
SINGLE-CYCLE DESELECT STATIC RAM
ISSI
®
ADVANCE INFORMATION
SEPTEMBER 2001
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Linear burst sequence control using MODE input
• Three chip enable option for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Single +2.5V, ±5% operation
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
DESCRIPTION
The
ISSI
IS61VPS51232, IS61VPS51236, and
IS61VPS10018 are high-speed, low-power synchronous
static RAMs designed to provide burstable, high-performance
memory for communication and networking applications.
The IS61VPS51232 is organized as 524,288 words by 32 bits
and the IS61VPS51236 is organized as 524,288 words by
36 bits. The IS61VPS10018 is organized as 1,048,576
words by 18 bits. Fabricated with
ISSI
's advanced CMOS
technology, the device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit. All synchronous inputs
pass through registers controlled by a positive-edge-
triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE).input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-200
3.1
5
200
-166
3.5
6
166
Units
ns
ns
MHz
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
09/25/01
Rev. 00B
1
IS61VPS51232 IS61VPS51236 IS61VPS10018
BLOCK DIAGRAM
MODE
Q0
A0'
ISSI
®
CLK
CLK
A0
BINARY
COUNTER
ADV
ADSC
ADSP
CE
CLR
Q1
A1'
A1
512Kx32; 512Kx36;
1024Kx18
MEMORY ARRAY
17/18
19/20
Q
19/20
A
D
ADDRESS
REGISTER
CE
CLK
32, 36,
or 18
32, 36,
or 18
GW
BWE
BWd
(x32/x36)
DQd
BYTE WRITE
REGISTERS
CLK
D
Q
BWc
(x32/x36)
DQc
Q
BYTE WRITE
REGISTERS
CLK
D
BWb
(x32/x36/x18)
DQb
BYTE WRITE
REGISTERS
CLK
D
Q
BWa
(x32/x36/x18)
DQa
Q
BYTE WRITE
REGISTERS
CLK
D
CE
CE2
CE2
D
Q
4
ENABLE
REGISTER
CE
CLK
INPUT
REGISTERS
CLK
OUTPUT
REGISTERS
CLK
OE
32, 36,
or 18
DQa - DQd
D
Q
ENABLE
DELAY
REGISTER
CLK
OE
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00B
09/25/01
IS61VPS51232 IS61VPS51236 IS61VPS10018
PIN CONFIGURATION
100-Pin TQFP
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
ISSI
®
NC
DQc
DQc
VCCQ
GND
DQc
DQc
DQc
DQc
GND
VCCQ
DQc
DQc
NC
VCC
NC
GND
DQd
DQd
VCCQ
GND
DQd
DQd
DQd
DQd
GND
VCCQ
DQd
DQd
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQb
DQb
VCCQ
GND
DQb
DQb
DQb
DQb
GND
VCCQ
DQb
DQb
GND
NC
VCC
ZZ
DQa
DQa
VCCQ
GND
DQa
DQa
DQa
DQa
GND
VCCQ
DQa
DQa
NC
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Controller Address Status
Synchronous Processor Address Status
Synchronous Burst Address Advance
Synchronous Byte Write Enable
Synchronous Byte Write Enable
Synchronous Clock
DQa-DQd
GND
GW
MODE
OE
V
CC
V
CCQ
ZZ
Synchronous Data Input/Output
Ground
Synchronous Global Write Enable
Burst Sequence Mode Selection
Output Enable
+2.5V Power Supply
Isolated Output Buffer Supply:
+2.5V
Snooze Enable
A
ADSC
ADSP
ADV
BWa-BWd
BWE
CLK
CE,
CE2,
CE2
Synchronous Chip Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
09/25/01
Rev. 00B
MODE
A
A
A
A
A1
A0
NC
NC
GND
VCC
A
A
A
A
A
A
A
A
A
512K x 32
3
IS61VPS51232 IS61VPS51236 IS61VPS10018
PIN CONFIGURATION
119-pin PBGA (Top View)
1
A
VCCQ
B
NC
C
NC
D
DQc
E
DQc
F
VCCQ
G
DQc
H
DQc
J
VCCQ
K
DQd
L
DQd
M
VCCQ
N
DQd
P
DQd
R
NC
T
NC
U
VCCQ
TMS
TDI
TCK
TDO
NC
VCCQ
NC
A
A
A
NC
ZZ
A
MODE
VCC
NC
A
NC
DQPd
GND
A0
GND
DQPa
DQa
DQd
GND
A1
GND
DQa
DQa
DQd
GND
DQd
DQd
GND
BWd
CLK
NC
BWE
GND
BWa
GND
DQa
DQa
DQa
DQa
DQa
VCCQ
VCC
NC
VCC
NC
VCC
VCCQ
DQc
GND
DQc
DQc
GND
BWc
DQc
GND
DQPc
GND
NC
CE
OE
ADV
GW
GND
GND
GND
BWb
GND
DQPb
DQb
DQb
DQb
DQb
DQb
DQb
VCCQ
DQb
DQb
A
A
VCC
A
A
NC
A
A
A
A
2
3
4
5
6
7
ISSI
100-Pin TQFP
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
®
ADSP
ADSC
A
A
A
A
VCCQ
DQPc
NC
DQc
DQc
VCCQ
GND
DQc
DQc
DQc
DQc
GND
VCCQ
DQc
DQc
NC
VCC
NC
GND
DQd
DQd
VCCQ
GND
DQd
DQd
DQd
DQd
GND
VCCQ
DQd
DQd
DQPd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
DQPb
DQb
DQb
VCCQ
GND
DQb
DQb
DQb
DQb
GND
VCCQ
DQb
DQb
GND
NC
VCC
ZZ
DQa
DQa
VCCQ
GND
DQa
DQa
DQa
DQa
GND
VCCQ
DQa
DQa
DQPa
512K x 36
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Controller Address Status
Synchronous Processor Address Status
Synchronous Burst Address Advance
Synchronous Byte Write Enable
Synchronous Byte Write Enable
Synchronous Clock
Synchronous Data Input/Output
DQPa-DQPd
GND
GW
MODE
OE
TMS, TDI,
TCK, TDO
V
CC
V
CCQ
ZZ
Parity Data Input/Output
Ground
Synchronous Global Write Enable
Burst Sequence Mode Selection
Output Enable
JTAG Boundary Scan Pins
+2.5V Power Supply
Isolated Output Buffer Supply:
+2.5V
Snooze Enable
A
ADSC
ADSP
ADV
BWa-BWd
BWE
CLK
DQa-DQd
CE,
CE2,
CE2
Synchronous Chip Enable
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00B
09/25/01
MODE
A
A
A
A
A1
A0
NC
NC
GND
VCC
A
A
A
A
A
A
A
A
A
IS61VPS51232 IS61VPS51236 IS61VPS10018
PIN CONFIGURATION
119-pin PBGA (Top View)
1
A
VCCQ
B
NC
C
NC
D
DQb
E
NC
F
VCCQ
G
NC
H
DQb
J
VCCQ
K
NC
L
DQb
M
VCCQ
N
DQb
P
NC
R
NC
T
NC
U
VCCQ
TMS
TDI
TCK
TDO
NC
VCCQ
A
A
NC
A
A
ZZ
A
MODE
VCC
NC
A
NC
DQPb
GND
A0
GND
NC
DQa
NC
GND
A1
GND
DQa
NC
DQb
GND
NC
GND
NC
BWE
BWa
GND
DQa
NC
NC
VCCQ
DQb
GND
CLK
GND
NC
DQa
VCC
NC
VCC
NC
VCC
VCCQ
NC
GND
DQb
BWb
NC
GND
DQb
GND
NC
GND
NC
CE
OE
ADV
GW
GND
GND
GND
GND
GND
DQPa
NC
DQa
NC
DQa
NC
DQa
VCCQ
DQa
NC
A
A
VCC
A
A
NC
A
A
A
A
2
3
4
5
6
7
ISSI
100-Pin TQFP
®
ADSP
ADSC
A
A
A
A
VCCQ
NC
NC
NC
NC
VCCQ
GND
NC
NC
DQb
DQb
GND
VCCQ
DQb
DQb
NC
VCC
NC
GND
DQb
DQb
VCCQ
GND
DQb
DQb
DQPb
NC
GND
VCCQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
NC
NC
VCCQ
GND
NC
DQPa
DQa
DQa
GND
VCCQ
DQa
DQa
GND
NC
VCC
ZZ
DQa
DQa
VCCQ
GND
DQa
DQa
NC
NC
GND
VCCQ
NC
NC
NC
1024K x 18
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Controller Address Status
Synchronous Processor Address Status
Synchronous Burst Address Advance
Synchronous Byte Write Enable
Synchronous Byte Write Enable
Synchronous Clock
Synchronous Data Input/Output
ZZ
DQPa-DQPb
GND
GW
MODE
OE
TMS, TDI,
TCK, TDO
V
CC
V
CCQ
Parity Data I/O; DQPa is parity for
DQa1-8; DQPb is parity for DQb1-8
Ground
Synchronous Global Write Enable
Burst Sequence Mode Selection
Output Enable
JTAG Boundary Scan Pins
+2.5V Power Supply
Isolated Output Buffer Supply:
+2.5V
Snooze Enable
A
ADSC
ADSP
ADV
BWa-BWd
BWE
CLK
DQa-DQd
CE,
CE2,
CE2
Synchronous Chip Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
09/25/01
Rev. 00B
MODE
A
A
A
A
A1
A0
NC
NC
GND
VCC
A
A
A
A
A
A
A
A
A
A
A
CE
CE2
NC
NC
BWb
BWa
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
5
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