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IS61WV5128ALL/ALS

IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

AUGUST 2009

FEATURES

HIGH SPEED: (IS61/64WV5128ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low stand-by power: 7 mW (typical)

CMOS standby

LOW POWER: (IS61/64WV5128ALS/BLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 35 mW (typical)

• Low stand-by power: 0.6 mW (typical)

CMOS standby

• Single power supply

— V

1.65V to 2.2V (IS61WV5128Axx)

— V

2.4V to 3.6V (IS61/64WV5128Bxx)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Industrial and Automotive temperature support

• Lead-free available

DESCRIPTION

The

ISSI

IS61WV5128Axx and IS61/64WV5128Bxx

are very high-speed, low power, 524,288-word by

8-bit CMOS static RAMs. The IS61WV5128Axx and

IS61/64WV5128Bxx are fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields higher performance and low power consumption

devices.

When

is HIGH (deselected), the device assumes

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

The IS61WV5128Axx and IS61/64WV5128Bxx operate

from a single power supply.

The IS61WV5128ALL and IS61/64WV5128BLL are avail-

able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin

TSOP (Type II) packages.

The IS61WV5128ALS and IS61/64WV5128BLS are

available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I),

32-pin SOP and 32-pin TSOP (Type II) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A18

DECODER

512K X 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

PIN CONFIGURATION (HIGH SPEED) (61/64WV5128ALL/BLL)

36 mini BGA

44-Pin TSOP (Type II)

I/O4

I/O5

GND

I/O6

I/O7

I/O0

I/O1

GND

A18

A10

A11

A17

A16

A12

A15

A13

I/O2

I/O3

A14

I/O0

I/O1

GND

I/O2

I/O3

A18

A17

A16

A15

I/O7

I/O6

GND

I/O5

I/O4

A14

A13

A12

A11

A10

PIN DESCRIPTIONS

A0-A18

I/O0-I/O7

GND

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

Bidirectional Ports

Power

Ground

No Connection

36-Pin SOJ

I/O0

I/O1

GND

I/O2

I/O3

A18

A17

A16

A15

I/O7

I/O6

GND

I/O5

I/O4

A14

A13

A12

A11

A10

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

PIN CONFIGURATION (LOW POWER) (61/64WV5128ALS/BLS)

32-pin TSOP (TYPE I), (Package Code T)

32-pin sTSOP (TYPE I) (Package Code H)

32-pin SOP

32-pin TSOP (TYPE II)

(Package Code T2)

A11

A13

A18

A15

A17

A16

A14

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A17

A16

A14

A12

I/O0

I/O1

I/O2

GND

A15

A18

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

PIN DESCRIPTIONS

A0-A18

I/O0-I/O7

GND

Address Inputs

Chip Enable 1 Input

Output Enable Input

Write Enable Input

Input/Output

Power

Ground

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 3.3V + 5%

Symbol

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

Output Leakage

Test Conditions

Min.,

–4.0 mA

Min.,

8.0 mA

Min.

2.4

—

–0.3

–1

Max.

—

0.4

+ 0.3

0.8

Unit

µA

GND

≤

GND

≤

out

≤

Outputs Disabled

Note:

(min.) = –0.3V

DC; V

(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.

(max.) = V

0.3V dC; V

(max.) = V

2.0V AC

(pulse width <10 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 2.4V-3.6V

Symbol

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

Output Leakage

Test Conditions

Min.,

–1.0 mA

Min.,

1.0 mA

Min.

1.8

—

2.0

–0.3

–1

Max.

—

0.4

+ 0.3

0.8

Unit

µA

GND

≤

GND

≤

out

≤

Outputs Disabled

Note:

(min.) = –0.3V

DC; V

(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.

(max.) = V

0.3V dC; V

(max.) = V

2.0V AC

(pulse width <10 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 1.65V-2.2V

Symbol

(1)

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input Leakage

Output Leakage

Test Conditions

= Min, I

-0.1 mA

= Min, I

0.1 mA

Min.

1.4

—

1.4

–0.2

–1

Max.

—

0.2

+ 0.2

0.4

Unit

µA

GND

≤

GND

≤

out

≤

Outputs Disabled

Note:

(min.) = –0.3V

DC; V

(min.) = –2.0V AC (pulse width <10 ns). Not 100% tested.

(max.) = V

0.3V dC; V

(max.) = V

2.0V AC

(pulse width <10 ns). Not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

TRUTH TABLE

Mode

Not Selected

(Power-down)

Output Disabled H

Read

Write

I/O Operation V

Current

High-Z

, I

High-Z

out

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

terM

stg

Parameter

Terminal Voltage with Respect to GND

Relates to GND

Storage Temperature

Power Dissipation

Value

–0.5 to V

+ 0.5

–0.3 to 4.0

–65 to +150

1.0

Unit

°C

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

CAPACITANCE

(1,2)

Symbol

I/o

Parameter

Input Capacitance

Input/Output Capacitance

Conditions

= 0V

out

= 0V

Max.

Unit

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

= 25°C,

f = 1 MHz, V

= 3.3V.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

参数对比

与IS61WV5128BLL-10BLI相近的元器件有：IS61WV5128BLL-10KLI、IS61WV5128BLL-10TLI、IS61WV5128BLS-25TLI、IS61WV5128BLL-10BI、IS64WV5128BLL-10CTLA3。描述及对比如下：

型号	IS61WV5128BLL-10BLI	IS61WV5128BLL-10KLI	IS61WV5128BLL-10TLI	IS61WV5128BLS-25TLI	IS61WV5128BLL-10BI	IS64WV5128BLL-10CTLA3
描述	Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, LEAD FREE, MINI, BGA-36	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36	Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44	Standard SRAM, 512KX8, 25ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44	Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
是否无铅	不含铅	不含铅	不含铅	不含铅	含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	不符合	符合
零件包装代码	BGA	SOJ	TSOP2	TSOP2	BGA	TSOP2
包装说明	TFBGA, BGA36,6X8,30	SOJ, SOJ36,.44	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	TFBGA, BGA36,6X8,30	TSOP2, TSOP44,.46,32
针数	36	36	44	44	36	44
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	10 ns	10 ns	10 ns	25 ns	10 ns	10 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B36	R-PDSO-J36	R-PDSO-G44	R-PDSO-G44	R-PBGA-B36	R-PDSO-G44
JESD-609代码	e1	e3	e3	e3	e0	e3
长度	8 mm	23.49 mm	18.41 mm	18.41 mm	8 mm	18.41 mm
内存密度	4194304 bi	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8
湿度敏感等级	3	3	3	3	3	3
功能数量	1	1	1	1	1	1
端子数量	36	36	44	44	36	44
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	SOJ	TSOP2	TSOP2	TFBGA	TSOP2
封装等效代码	BGA36,6X8,30	SOJ36,.44	TSOP44,.46,32	TSOP44,.46,32	BGA36,6X8,30	TSOP44,.46,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	NOT SPECIFIED	260
电源	1.8/2 V	1.8/2 V	1.8/2 V	1.8/2 V	1.8/2 V	2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	3.76 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.015 A
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V
最大压摆率	0.045 mA	0.045 mA	0.045 mA	0.025 mA	0.045 mA	0.065 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	AUTOMOTIVE
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed
端子形式	BALL	J BEND	GULL WING	GULL WING	BALL	GULL WING
端子节距	0.75 mm	1.27 mm	0.8 mm	0.8 mm	0.75 mm	0.8 mm
端子位置	BOTTOM	DUAL	DUAL	DUAL	BOTTOM	DUAL
处于峰值回流温度下的最长时间	40	10	40	40	NOT SPECIFIED	40
宽度	6 mm	10.16 mm	10.16 mm	10.16 mm	6 mm	10.16 mm
Factory Lead Time	8 weeks	8 weeks	8 weeks	13 weeks 6 days	-	12 weeks
Base Number Matches	1	1	1	1	1	-
厂商名称	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )