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IS64LF102436B-75TQLA3-TR

SRAM 36Mb, 7.5ns, 3.3V 1024K x 36 Sync SRAM

器件类别:存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

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器件参数
参数名称
属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
ISSI(芯成半导体)
RoHS
Details
Memory Size
36 Mbit
Organization
1 M x 36
Access Time
7.5 ns
Maximum Clock Frequency
117 MHz
电源电压-最大
Supply Voltage - Max
3.465 V
电源电压-最小
Supply Voltage - Min
3.135 V
Supply Current - Max
250 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
QFP-100
系列
Packaging
Reel
Memory Type
Synchronous SRAM
Moisture Sensitive
Yes
工厂包装数量
Factory Pack Quantity
800
单位重量
Unit Weight
0.288894 oz
文档预览
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
1M x 36, 2M x 18
36 Mb SYNCHRONOUS
FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VF: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVF: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-
pin PBGA packages
• Lead-free available
2015
DESCRIPTION
The 36Mb product family features high-speed, low-power
synchronous static
RAMs
designed to provide burstable,
high-performance memory for communication and network-
ing applications. The
IS61LF/VF102436B is organized as
1,048,476 words by 36 bits. The IS61LF/VF204818B
is
organized as 2,096,952 words by 18 bits. Fabricated with
ISSI
's advanced CMOS technology, the device integrates
a 2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. Byte write operation is performed by using byte write
enable (BWE)
input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
05/4/2015
1
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
BLOCK DIAGRAM
MODE
CLK
/CKE
/ADV
/ADSC
/ADSP
A0-x
x18: x=21
x36: x=20
BINARY
COUNTER
/CE
/CLR
20/21
Q0
A0
A0`
Q1
A1
A1`
D
ADDRESS
REGISTER
/CE
CLK
Q
18/19
1Mx36;
2Mx18
Memory Array
/GW
/BWE
/BW(a-x)
x18:x=b,
x32,x36:x=d
/CE
CE2
/CE2
D
Q
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
D
ENABLE
REGISTERS
Q
INPUT
REGISTER
CLK
OUTPUT
REGISTER
DQ(a-x)
x18:x=b,
x32,x36:x=d
ZZ
Power
Down
CLK
CLK
/OE
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
05/4/2015
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
165-PIN BGA
165-Ball, 13x15 mm BGA
119-PIN BGA
119-Ball, 14x22 mm BGA
BOTTOM VIEW
BOTTOM VIEW
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
05/4/2015
3
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
119 BGA PACKAGE PIN CONFIGURATION
1M
x
36 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
A
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
3
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
A
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWa-BWd
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous Address Status
Processor
Synchronous Address Status
Controller
Synchronous
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous
Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQd
DQPa-DQPd
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous
Output Enable
Asynchronous
Power Sleep Mode
Synchronous Burst Sequence
Selection
JTAG Pins
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
05/4/2015
IS61(64)LF102436B, IS61(64)VF/VVF102436B
IS61(64)LF204818B, IS61(64)VF/VVF204818B
119 BGA PACKAGE PIN CONFIGURATION
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQb
NC
V
DDQ
NC
DQb
V
DDQ
NC
DQb
V
DDQ
DQb
NC
NC
NC
V
DDQ
2
A
A
A
NC
DQb
NC
DQb
NC
V
DD
DQb
NC
DQb
NC
DQPb
A
A
TMS
3
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPa
NC
DQa
NC
DQa
V
DD
NC
DQa
NC
DQa
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQa
V
DDQ
DQa
NC
V
DDQ
DQa
NC
V
DDQ
NC
DQa
NC
ZZ
V
DDQ
2M
x
18 (TOP VIEW)
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWa-BWb
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous
Address Status Processor
Synchronous Address Status Controller
Synchronous
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous
Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQb
DQPa-DQPb
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous
Output Enable
Asynchronous Power Sleep Mode
Synchronous Burst Sequence
Selection
JTAG Pins
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
05/4/2015
5
查看更多>
参数对比
与IS64LF102436B-75TQLA3-TR相近的元器件有:IS64LF204818B-75TQLA3-TR、IS61LF204818B、IS61LF204818B-75TQLI-TR、IS61LF102436B-75TQLI、IS61LF204818B-75TQLI。描述及对比如下:
型号 IS64LF102436B-75TQLA3-TR IS64LF204818B-75TQLA3-TR IS61LF204818B IS61LF204818B-75TQLI-TR IS61LF102436B-75TQLI IS61LF204818B-75TQLI
描述 SRAM 36Mb, 7.5ns, 3.3V 1024K x 36 Sync SRAM SRAM SRAM 36Mb, 7.5ns 2M x 18 Sync SRAM SRAM 36Mb,Flow-Through,Sync,1Mb x 36,7.5ns,3.3V I/O,100 Pin TQFP, RoHS SRAM 36Mb, 7.5ns 2M x 18 Sync SRAM
产品种类
Product Category
SRAM SRAM SRAM SRAM SRAM SRAM
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
RoHS Details Details - Details Details Details
Memory Size 36 Mbit - - 36 Mbit 36 Mbit 36 Mbit
Organization 1 M x 36 - - 2 M x 18 1 M x 36 2 M x 18
Access Time 7.5 ns - - 7.5 ns 7.5 ns 7.5 ns
Maximum Clock Frequency 117 MHz - - 117 MHz 117 MHz 117 MHz
电源电压-最大
Supply Voltage - Max
3.465 V - - 3.465 V 2.625 V, 3.465 V 3.465 V
电源电压-最小
Supply Voltage - Min
3.135 V - - 3.135 V 2.375 V, 3.135 V 3.135 V
Supply Current - Max 250 mA - - 250 mA 300 mA 250 mA
最小工作温度
Minimum Operating Temperature
- 40 C - - - 40 C - 40 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C - - + 85 C + 85 C + 85 C
安装风格
Mounting Style
SMD/SMT - - SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
QFP-100 - - TQFP-100 TQFP-100 TQFP-100
Memory Type Synchronous SRAM - - SDR SDR SDR
Moisture Sensitive Yes - - Yes Yes Yes
工厂包装数量
Factory Pack Quantity
800 800 - 800 72 72
单位重量
Unit Weight
0.288894 oz - - 0.023175 oz 0.023175 oz 0.023175 oz
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