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IS64WV12816EFALL-12B2LA3

Standard SRAM,

器件类别:存储    存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

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器件参数
参数名称
属性值
Objectid
7248986832
包装说明
,
Reach Compliance Code
unknown
ECCN代码
EAR99
文档预览
IS61/64WV12816EFALL
IS61/64WV12816EFBLL
128Kx16 HIGH SPEED AYNCHRONOUS
CMOS STATIC RAM with ECC
KEY FEATURES
DESCRIPTION
High-speed access time: 8ns, 10ns, 12ns
Single power supply
– 1.65V-2.2V V
DD
(IS61/64WV12816EFALL)
– 2.4V-3.6V V
DD
(IS61/64WV12816EFBLL)
Error Detection and Correction with optional
ERR1/ERR2 output pin:
-
-
ERR1 pin indicates 1-bit error detection and
correction.
ERR2 pin indicates 2-bit error detection
The
ISSI
IS61/64WV12816EFALL/EFBLL are high-speed,
low power, 2M bit static RAMs organized as 128K words by
16 bits. It is fabricated using
ISSI's
high-performance CMOS
technology and implemented ECC function to improve
reliability.
This highly reliable process coupled with innovative circuit
design techniques including ECC (SEC-DED: Single Error
Correcting-Double Error Detecting) yield high-performance
and highly reliable devices.
When CS# is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE#) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB#) and Lower Byte (LB#)
access.
The IS61/64WV12816EFALL/EFBLL are packaged in the
JEDEC standard 48-ball mini BGA (6mm x 8mm), and 44-pin
TSOP (TYPE II)
JANUARY 2021
Three state outputs
Industrial and Automotive temperature support
Lead-free available
FUNCTIONAL BLOCK DIAGRAM
A0 – A17
A16
DECODER
Memory
Memory
Lower IO ECC Upper IO ECC
Array
Array
Array
Array
128Kx8 128Kx5 128Kx8 128Kx5
256Kx8 256Kx5 256Kx8 256Kx5
VDD
VSS
ERR1
ERR2
I/O0 – I/O7
I/O8 – I/O15
I/O
DATA
CIRCUIT
8
8
8
ECC
ECC
13
13
5
8
5
COLUMN I/O
Column I/O
CS#
OE#
OE#
WE#
UB#
LB#
ZZ#
CONTROL
CIRCUIT
Copyright © 2021 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. A2
01/11/2021
1
IS61/64WV12816EFALL
IS61/64WV12816EFBLL
PIN CONFIGURATIONS
48-Ball mini BGA(6mm x 8mm),
(Package Code : B)
1
2
3
4
5
6
48-Ball mini BGA (6mm x 8mm)
(Package Code : B2)
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
NC
A
LB#
OE#
A0
A1
A2
NC
B
I/O8
UB#
A3
A4
CS#
I/O0
B
I/O0
UB#
A3
A4
CS#
I/O8
C
I/O9
I/O10
A5
A6
I/O1
I/O2
C
D
I/O1
I/O2
A5
A6
I/O10
I/O9
D
VSS
I/O11
NC
A7
I/O3
VDD
VSS
I/O3
NC
A7
I/O11
VDD
E
VDD
I/O12
NC
A16
I/O4
VSS
E
VDD
I/O4
NC
A16
I/O12
VSS
F
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O6
I/O5
A14
A15
I/O13
I/O14
G
I/O15
NC
A12
A13
WE#
I/O7
G
I/O7
NC
A12
A13
WE#
I/O15
H
NC
A8
A9
A10
A11
NC
H
NC
A8
A9
A10
A11
NC
48-Ball mini BGA(6mm x 8mm), ERR1
(Package Code : B3)
1
2
3
4
5
6
48-Ball mini BGA(6mm x 8mm), ERR1, Switched IO
(Package Code : B4)
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
NC
A
LB#
OE#
A0
A1
A2
NC
B
I/O8
UB#
A3
A4
CS#
I/O0
B
I/O0
UB#
A3
A4
CS#
I/O8
C
I/O9
I/O10
A5
A6
I/O1
I/O2
C
D
I/O1
I/O2
A5
A6
I/O10
I/O9
D
VSS
I/O11
NC
A7
I/O3
VDD
VSS
I/O3
NC
A7
I/O11
VDD
E
VDD
I/O12
ERR1
A16
I/O4
VSS
E
VDD
I/O4
ERR1
A16
I/O12
VSS
F
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O6
I/O5
A14
A15
I/O13
I/O14
G
I/O15
NC
A12
A13
WE#
I/O7
G
I/O7
NC
A12
A13
WE#
I/O15
H
NC
A8
A9
A10
A11
NC
H
NC
A8
A9
A10
A11
NC
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. A2
01/11/2021
2
IS61/64WV12816EFALL
IS61/64WV12816EFBLL
48-Ball mini BGA(6mm x 8mm), ERR1/2
(Package Code : B5)
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
NC
B
I/O8
UB#
A3
A4
CS#
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
NC
A7
I/O3
VDD
E
VDD
I/O12
ERR1
A16
I/O4
VSS
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
ERR2
A12
A13
WE#
I/O7
H
NC
A8
A9
A10
A11
NC
44-Pin TSOP-II, (Package Code : T)
44-Pin TSOP-II with ERR1, (Package Code : T2)
A4
A3
A2
A1
A0
CS#
I/O0
I/O1
I/O2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
VSS
VDD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A4
A3
A2
A1
A0
CS#
I/O0
I/O1
I/O2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
I/O15
I/O14
I/O13
I/O12
VSS
VDD
I/O11
I/O10
I/O9
I/O8
ERR1
A8
A9
A10
A11
NC
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. A2
01/11/2021
3
IS61/64WV12816EFALL
IS61/64WV12816EFBLL
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CS#
OE#
WE#
LB#
UB#
ERR1
ERR2
NC
V
DD
VSS
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control
(I/O0-I/O7)
Upper-byte Control
(I/O8-I/O15)
1-bit Error Detection and
Correction Signal
2-bit ERR Detection Signal
No Connection
Power
Ground
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. A2
01/11/2021
4
IS61/64WV12816EFALL
IS61/64WV12816EFBLL
FUNCTION DESCRIPTION
SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM
has three different modes supported. Each function is described below with Truth Table.
STANDBY MODE
Device enters standby mode when deselected (CS# HIGH). The input and output pins (I/O0-15) are placed in a high
impedance state. CMOS input in this mode will maximize saving power.
WRITE MODE
Write operation issues with Chip selected (CS#) and Write Enable (WE#) input LOW. The input and output pins (I/O0-
15) are in data input mode. Output buffers are closed during this time even if OE# is LOW. UB# and LB# enables a
byte write feature. By enabling LB# LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified
on the address pins. And with UB# being LOW, data from I/O pins (I/O8 through I/O15) are written into the location.
READ MODE
Read operation issues with Chip selected (CS# LOW) and Write Enable (WE#) input HIGH. When OE# is LOW, output
buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. UB# and LB# enables a
byte read feature. By enabling LB# LOW, data from memory appears on I/O0-7. And with UB# being LOW, data from
memory appears on I/O8-15.
In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as
READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used.
ERROR DETECTION AND ERROR CORRECTION
Independent ECC per each byte
-
detect and correct one bit error per byte or detect 2-bit error per byte
Optional ERR1 output signal indicates 1-bit error detection and correction
Optional ERR2 output signal indicates 2-bit error detection.
Controller can use either ERR1 or ERR2 to monitor ECC event. Unused pins (ERR1 or ERR2) can be left
floating.
Better reliability than parity code schemes which can only detect an error but not correct an error
Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
ERR1, ERR2 OUTPUT SIGNAL BEHAVIOR
ERR1
0
1
0
1
High-Z
ERR2
0
0
1
1
High-Z
DQ pin
Status
Remark
Valid Q No Error
Valid Q 1-Bit Error only
In-Valid Q 2-Bit Error only
1-bit error per byte detected and corrected
No 1-bit error. 2-bit error per byte detected (out of 2 bytes)
In-Valid Q 1-bit & 2-bit error 1-bit error detected and corrected at one byte, and 2-bit error detected at another byte.
Valid D Non-Read
Write operation or Output Disabled
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. A2
01/11/2021
5
查看更多>
参数对比
与IS64WV12816EFALL-12B2LA3相近的元器件有:IS61WV12816EFALL-10BLI、IS61WV12816EFBLL-10B4LI、IS61WV12816EFBLL-10BLI、IS64WV12816EFBLL-10B4LA3、IS61WV12816EFALL-10TLI、IS61WV12816EFBLL-10T2LI、IS64WV12816EFALL-12BLA3、IS64WV12816EFALL-12CT2LA3。描述及对比如下:
型号 IS64WV12816EFALL-12B2LA3 IS61WV12816EFALL-10BLI IS61WV12816EFBLL-10B4LI IS61WV12816EFBLL-10BLI IS64WV12816EFBLL-10B4LA3 IS61WV12816EFALL-10TLI IS61WV12816EFBLL-10T2LI IS64WV12816EFALL-12BLA3 IS64WV12816EFALL-12CT2LA3
描述 Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM, Standard SRAM,
Objectid 7248986832 7248986736 7248986744 7248986748 7248986848 7248986738 7248986749 7248986840 7248986841
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
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