without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
1
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
48-pin mini BGA (9mmx11mm)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
VDD
I/O
14
I/O
15
A18
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
VDD
GND
I/O
6
I/O
7
NC
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
DD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
A18
A14
A13
A12
A11
A10
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
DD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
3
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
TRUTH TABLE
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Mode
Not Selected
Output Disabled
Read
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
Write
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
OPERATING RANGE (V
DD
) (IS61WV51216ALL)
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Automotive
–40°C to +125°C
V
DD
(20 n
S
)
1.65V-2.2V
1.65V-2.2V
1.65V-2.2V
OPERATING RANGE (V
DD
) (IS61WV51216BLL)
(1)
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
V
DD
(8 n
S
)
3.3V + 5%
3.3V + 5%
V
DD
(10 n
S
)
2.4V-3.6V
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of
