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ISL6206
Data Sheet
May 2002
FN9071.1
High Voltage Synchronous Rectified Buck
MOSFET Driver
The ISL6206 is a high voltage, high frequency, dual
MOSFET driver specifically designed to drive two N-Channel
power MOSFETs in a synchronous-rectified buck converter
topology in mobile computing applications. This driver
combined with an Intersil Multi-Phase Buck PWM controller
forms a complete single-stage core-voltage regulator
solution for advanced mobile microprocessors.
The ISL6206 features a three-state PWM input that, working
together with any Intersil multiphase PWM controllers, will
prevent a negative transient on the output voltage when the
output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
The output drivers in the ISL6206 has the capacity to
efficiently switch power MOSFETs at frequencies up to
2MHz. Each driver is capable of driving a 3000pF load with a
15ns propagation delay and 20ns transition time. This
product implements bootstrapping on the upper gate,
reducing implementation complexity and allowing the use of
higher performance, cost effective, N-Channel MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 30V Operation Voltage
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 15ns
• Three-state Input for Output Stage Shutdown
• Internal Bootstrap Schottky Diode
Applications
• Core Voltage Supplies for Intel and AMD® Mobile
Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Output Voltage DC-DC Converters
• High Input Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinout
ISL6206CB (SOIC)
TOP VIEW
UGATE
1
2
3
4
8
7
6
5
PHASE
NC
VCC
LGATE
Ordering Information
PART NUMBER
ISL6206CB
ISL6206CB-T
TEMP. RANGE
(
o
C)
-10 to 85
PACKAGE
8 Ld SOIC
PKG. NO.
BOOT
M8.15
PWM
GND
8 Ld SOIC Tape and Reel
ti
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
AMD® is a registered trademark of Advanced Micro Devices, Inc.
ISL6206
Block Diagram
ISL6206
VCC
BOOT
UGATE
VCC
10K
PWM
10K
SHOOT-
THROUGH
PROTECTION
PHASE
CONTROL
LOGIC
VCC
LGATE
GND
Typical Application - Two Phase Converter Using ISL6206 Gate Drivers
V
BAT
+5V
+5V
+5V
VCC
FB
VCC
VSEN
PWM1
PGOOD
PWM2
NC
MAIN
CONTROL
LGATE
PWM
DRIVE
ISL6206
PHASE
COMP
BOOT
UGATE
+V
CORE
VID
ISEN1
ISEN2
+5V
VCC
FS
DACOUT
GND
PWM
DRIVE
ISL6206
NC
PHASE
V
BAT
BOOT
UGATE
LGATE
2
ISL6206
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
BOOT Voltage (V
BOOT
). . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 36V
Phase Voltage (V
PHASE
) (Note 1) . . . V
BOOT
- 7V to V
BOOT
+ 0.3V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . -40
o
C to 125
o
C
Thermal Information
Thermal Resistance
θ
JA
(
o
C/W)
SOIC Package (Note 2) . . . . . . . . . . . . . . . . . . . . . .
110
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -10
o
C to 85
o
C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125
o
C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is shorted to GND.
2.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
PWM INPUT
Input Current
PWM three-state Rising Threshold
PWM three-state Falling Threshold
three-state Shutdown Holdoff Time
SWITCHING TIME
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
OUTPUT
Upper Drive Source Resistance
Upper Driver Source Current (Note 3)
Upper Drive Sink Resistance
Upper Driver Sink Current (Note 3)
Lower Drive Source Resistance
Lower Driver Source Current (Note 3)
Lower Drive Sink Resistance
Lower Driver Sink Current (Note 3)
NOTE:
3. Guaranteed by design, not tested.
R
UGATE
I
UGATE
R
UGATE
I
UGATE
R
LGATE
I
LGATE
R
LGATE
I
LGATE
500mA Source Current
V
UGATE-PHASE
= 2.5V
500mA Sink Current
V
UGATE-PHASE
= 2.5V
500mA Source Current
V
LGATE
= 2.5V
500mA Sink Current
V
LGATE
= 2.5V
-
-
-
-
-
-
-
-
3.1
700
1.5
1.1
3.1
700
1.5
1.1
5.0
-
2.6
-
5.0
-
2.6
-
Ω
mA
Ω
A
Ω
mA
Ω
A
t
RUGATE
t
RLGATE
t
FUGATE
t
FLGATE
t
PDLUGATE
t
PDLLGATE
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
-
-
-
-
-
-
20
20
15
15
15
15
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
I
PWM
V
PWM
= 5V
V
PWM
= 0V
V
VCC
= 5V
V
VCC
= 5V
V
VCC
= 5V, Temperature = 25
°
C
-
-
-
3.3
-
250
-250
-
-
300
-
-
1.7
-
-
µA
µA
V
V
ns
I
VCC
PWM pin floating, V
VCC
= 5V
-
30
-
µA
Recommended Operating Conditions, Unless Otherwise Noted
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
3
ISL6206
Functional Pin Description
UGATE (Pin 1)
Upper gate drive output. Connect to the gate of the high-side
N-Channel power MOSFET.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. This pin provides a return path
for the upper gate driver.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. See the Bootstrap Diode and
Capacitor section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
Description
Operation
The ISL6206 dual MOSFET driver controls both high-side and
low-side N-Channel FETs from one externally provided PWM
signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Timing Diagram). After a short propagation
delay [t
PDLLGATE
], the lower gate begins to fall. Typical fall
times [t
FLGATE
] are provided in the Electrical Specifications
section. Adaptive shoot-through circuitry monitors the
LGATE voltage and determines the upper gate delay time
[t
PDHUGATE
] based on how quickly the LGATE voltage
drops below 1V. This prevents both the lower and upper
MOSFETs from conducting simultaneously or shoot-
through. Once this delay period is complete the upper gate
drive begins to rise [t
RUGATE
] and the upper MOSFET turns
on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
PDLUGATE
] is encountered before the
upper gate begins to fall [t
FUGATE
]. Again, the adaptive
shoot-through circuitry determines the lower gate delay time,
t
PDHLGATE
. The upper MOSFET gate voltage is monitored
and the lower gate is allowed to rise after the upper MOSFET
gate-to-source voltage drops below 1V. The lower gate then
rises [t
RLGATE
], turning on the lower MOSFET.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of any Intersil
multiphase controllers.
GND (Pin 4)
Ground pin. All signals are referenced to this node.
LGATE (Pin 5)
Lower gate drive output. Connect to the gate of the low-side
N-Channel power MOSFET.
VCC (Pin 6)
Connect this pin to a +5V bias supply. Place a high quality
bypass capacitor from this pin to GND.
NC (Pin 7)
No connection. Leave this pin floating.
Timing Diagram
PWM
t
PDHUGATE
t
PDLUGATE
t
RUGATE
t
FUGATE
UGATE
LGATE
t
FLGATE
t
PDLLGATE
t
PDHLGATE
t
RLGATE
4
