CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2.
θ
JC
, “case temperature” location is at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PARAMETER
DC CHARACTERISTICS
Supply Voltage
Ground Current
V
IN
Quiescent condition: I
O1
= 0μA; I
O2
= 0μA
I
DD1
I
DD2
One LDO active
Both LDO active
@25°C
2.3
6.5
V
25
42
0.1
1.9
1.6
2.1
1.8
32
52
1.0
2.3
2.0
+0.7
+0.8
+1.8
μA
μA
μA
V
V
%
%
%
mA
Shutdown Current
UVLO Threshold
I
DDS
V
UV+
V
UV-
Regulation Voltage Accuracy
Initial accuracy at V
IN
= V
O
+0.5V, I
O
= 10mA, T
J
= 25°C
V
IN
= V
O
+0.5V to 5.5V, I
O
= 10μA to 300mA, T
J
= 25°C
V
IN
= V
O
+0.5V to 5.5V, I
O
= 10μA to 300mA,
T
J
= -40°C to 125°C
-0.7
-0.8
-1.8
300
350
475
300
250
200
145
110
Maximum Output Current
Internal Current Limit
Dropout Voltage (Note 4)
I
MAX
I
LIM
V
DO1
V
DO2
V
DO3
Continuous
600
500
400
325
mA
mV
mV
mV
°C
°C
I
O
= 300mA; V
O
<
2.5V
I
O
= 300mA; 2.5V
≤
V
O
≤
2.8V
I
O
= 300mA; V
O
> 2.8V
Thermal Shutdown Temperature
T
SD+
T
SD-
AC CHARACTERISTICS
Ripple Rejection (Note 3)
I
O
= 10mA, V
IN
= 2.8V(min), V
O
= 1.8V, C
BYP
= 0.1µF
@ 1kHz
@ 10kHz
@ 100kHz
Output Noise Voltage (Note 3)
DEVICE START-UP CHARACTERISTICS
Device Enable TIme
T
EN
Time from assertion of the ENx pin to when the output voltage
reaches 95% of the VO(nom)
250
500
μs
I
O
= 100µA, V
O
= 1.5V, T
A
= 25°C, C
BYP
= 0.1µF
BW = 10Hz to 100kHz
90
70
50
30
dB
dB
dB
μVrms
3
FN9217.3
August 2, 2006
ISL9000
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF
(Continued)
SYMBOL
T
SSR
TEST CONDITIONS
Slope of linear portion of LDO output voltage ramp during
start-up
MIN
TYP
30
MAX
60
UNITS
μs/V
PARAMETER
LDO Soft-Start Ramp Rate
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
Input High Voltage
Input Leakage Current
Pin Capacitance
V
IL
V
IH
I
IL
, I
IH
C
PIN
Informative
-0.3
1.4
0.5
V
IN
+0.3
0.1
5
V
V
μA
pF
POR1, POR2 PIN CHARACTERISTICS
POR1, POR2 Thresholds
V
POR+
V
POR-
POR1 Delay
T
P1LH
T
P1HL
POR2 Delay
T
P2LH
T
P2HL
POR1, POR2 Pin Output Low
Voltage
POR1, POR2 Pin Internal Pull-Up
Resistance
NOTES:
3. Guaranteed by design and characterization.
4. VOx = 0.98 * VOx(NOM); Valid for VOx greater than 1.85V.
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