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ISL9R1560G2

DIODE GEN PURP 600V 15A TO247

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
制造商包装代码
340CL
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Is Samacsys
N
其他特性
FREEWHEELING DIODE, SNUBBER DIODE
应用
FAST SOFT RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
2 V
JEDEC-95代码
TO-247
JESD-30 代码
R-PSFM-T2
JESD-609代码
e3
最大非重复峰值正向电流
200 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.04 µs
表面贴装
NO
技术
AVALANCHE
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
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ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
November
2013
ISL9R1560G2, ISL9R1560P2,
ISL9R1560S2, ISL9R1560S3S
15 A, 600 V, STEALTH
TM
Diode
Features
• Stealth Recovery
t
rr
= 29.4 ns (@ I
F
= 15 A)
• Max Forward Voltage, V
F
= 2.2 V (@ T
C
= 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Description
The ISL9R1560G2,
ISL9R1560P2, ISL9R1560S2,
ISL9R1560S3S
is a STEALTH™ diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH™ family exhibits low reverse recovery current
(I
rr
) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or
boost diode in power supplies and other power switching
applications. The low I
rr
and short ta phase reduce loss in
switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may be
operated without the use of additional snubber circuitry.
Consider using the STEALTH™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Applications
SMPS
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC STYLE TO-247-2L
ANODE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
CATHODE
(FLANGE)
ANODE
CATHODE
Symbol
JEDEC TO-220AC-2L
K
A
JEDEC STYLE TO-262(I
2
-PAK)
ANODE
CATHODE
JEDEC TO-263AB(D
2
-PAK)
CATHODE
(FLANGE)
CATHODE
(FLANGE)
N/C
ANODE
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 145 C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
o
Ratings
600
Unit
V
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
600
600
15
30
200
V
V
A
A
A
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
1
www.fairchildsemi.com
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
STEALTH™ Diode
Symbol
P
D
Parameter
Power Dissipation
Avalanche Energy (1 A, 40 mH)
Ratings
150
Unit
W
E
AVL
T
J
, T
STG
T
L
T
PKG
20
-55 to 175
300
260
mJ
°C
°C
°C
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Package Marking and Ordering Information
Part Number
ISL9R1560G2
ISL9R1560P2
ISL9R1560S2
Top Mark
ISL9R1560G2
ISL9R1560P2
ISL9R1560S2
Package
TO-247-2L
TO-220AC-2L
TO-262(I
2
-PAK)
Packing Method Reel Size
Tube
Tube
Tube
Reel
N/A
N/A
N/A
13" dia
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800
ISL9R1560S3ST ISL9R1560S3S
TO-263(D
2
-PAK)
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 600 V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 15 A
T
C
= 25°C
T
C
= 125°C
-
-
1.8
1.65
2.2
2.0
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10 V, I
F
= 0 A
-
62
-
pF
Switching Characteristics
t
rr
t
rr
I
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Current
I
F
= 1 A, di
F
/dt = 100 A/µs, V
R
= 30 V
I
F
=15 A, di
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 15 A,
di
F
/dt = 200 A/µs,
V
R
= 390 V, T
C
= 25°C
I
F
= 15 A,
di
F
/dt = 200 A/µs,
V
R
= 390 V,
T
C
= 125°C
I
F
= 15 A,
di
F
/dt = 800 A/µs,
V
R
= 390 V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
35
29.4
3.5
57
90
2.0
5.0
275
52
1.36
13.5
390
800
30
40
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
A
nC
ns
A
nC
A/µs
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Reverse Recovery Current
S
I
rr
Q
rr
t
rr
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Reverse Recovery Current
S
I
rr
Q
rr
di
M
/dt
Reverse Recovered Charge
Maximum di/dt during t
b
Thermal Characteristics
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
-
-
-
-
-
-
-
-
-
1.0
30
62
62
62
°C/W
°C/W
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
2
www.fairchildsemi.com
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
STEALTH™ Diode
Typical Performance Curves
30
4000
175
o
C
1000
25
I
F
, FORWARD CURRENT (A)
175
o
C
20
150
o
C
125
o
C
15
100
o
C
10
25
o
C
I
R
, REVERSE CURRENT (µA)
150
o
C
125
o
C
100
o
C
10
75
o
C
100
1
25
o
C
0.1
100
5
0
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
100
V
R
= 390V, T
J
= 125°C
80
t, RECOVERY TIMES (ns)
Figure 2. Reverse Current vs Reverse Voltage
100
V
R
= 390V, T
J
= 125°C
80
t, RECOVERY TIMES (ns)
t
b
AT I
F
= 30A, 15A, 7.5A
t
b
AT di
F
/dt = 200A/µs, 500A/µs, 800A/µs
60
60
40
40
20
t
a
AT di
F
/dt = 200A/µs, 500A/µs, 800A/µs
20
t
a
AT I
F
= 30A, 15A, 7.5A
30
0
200
400
600
800
1000
1200
1400
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
1600
0
0
5
10
15
20
25
I
F
, FORWARD CURRENT (A)
Figure 3. t
a
and t
b
Curves vs Forward Current
16
I
rr
, MAX REVERSE RECOVERY CURRENT (A)
Figure 4. t
a
and t
b
Curves vs di
F
/dt
25
V
R
= 390V, T
J
= 125°C
14
12
I
rr
, MAX REVERSE RECOVERY CURRENT (A)
di
F
/dt = 800A/µs
V
R
= 390V, T
J
= 125°C
I
F
= 30A
20
I
F
= 15A
15
I
F
= 7.5A
10
di
F
/dt = 500A/µs
10
8
6
4
2
0
5
10
15
20
25
30
I
F
, FORWARD CURRENT (A)
di
F
/dt = 200A/µs
5
0
200
400
600
800
1000
1200
1400
1600
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
Figure 6. Maximum Reverse Recovery Current
vs di
F
/dt
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
3
www.fairchildsemi.com
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
STEALTH™ Diode
Typical Performance Curves (Continued)
S, REVERSE RECOVERY SOFTNESS FACTOR
V
R
= 390V, T
J
= 125°C
I
F
= 30A
2.0
I
F
= 15A
Q
RR
, REVERSE RECOVERED CHARGE (nC)
2.5
700
V
R
= 390V, T
J
= 125°C
I
F
= 30A
600
500
I
F
= 15A
400
1.5
I
F
= 7.5A
1.0
300
I
F
= 7.5A
0.5
200
400
600
800
1000
1200
1400
1600
200
200
400
600
800
1000
1200
1400
1600
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor
vs di
F
/dt
1200
Figure 7. Reverse Recovered
Charge vs di
F
/dt
16
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
14
12
10
8
6
4
2
0
140
C
J
, JUNCTION CAPACITANCE (pF)
1000
800
600
400
200
0
145
150
155
160
165
170
175
0.1
1
10
100
T
C
, CASE TEMPERATURE (
o
C)
V
R
, REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance
vs Reverse Voltage
Figure 10. DC Current Derating Curve
1.0
THERMAL IMPEDANCE
Z
θJA,
NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Figure 11. Normalized Maximum Transient Thermal Impedance
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
4
www.fairchildsemi.com
查看更多>
参数对比
与ISL9R1560G2相近的元器件有:。描述及对比如下:
型号 ISL9R1560G2
描述 DIODE GEN PURP 600V 15A TO247
Brand Name ON Semiconductor
是否无铅 不含铅
厂商名称 ON Semiconductor(安森美)
制造商包装代码 340CL
Reach Compliance Code not_compliant
ECCN代码 EAR99
Factory Lead Time 1 week
Is Samacsys N
其他特性 FREEWHEELING DIODE, SNUBBER DIODE
应用 FAST SOFT RECOVERY
外壳连接 CATHODE
配置 SINGLE
二极管元件材料 SILICON
二极管类型 RECTIFIER DIODE
最大正向电压 (VF) 2 V
JEDEC-95代码 TO-247
JESD-30 代码 R-PSFM-T2
JESD-609代码 e3
最大非重复峰值正向电流 200 A
元件数量 1
相数 1
端子数量 2
最高工作温度 175 °C
最低工作温度 -55 °C
最大输出电流 15 A
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED
认证状态 Not Qualified
最大重复峰值反向电压 600 V
最大反向恢复时间 0.04 µs
表面贴装 NO
技术 AVALANCHE
端子面层 Tin (Sn)
端子形式 THROUGH-HOLE
端子位置 SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED
Base Number Matches 1
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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