Low Noise Driver Amplifier Die (11.0 – 16.0 GHz)
ITT3502D
FEATURES
•
•
•
•
•
•
•
CW or Pulsed Operation
2.7 dB Typical Noise Figure
11 dB Typical Gain
12 dBm Typical P
1dB
25 dBm Typical IP
3
50
Ω
Input/Output Impedance
Self-Aligned MSAG
®
MESFET Process
V
DD
RF
IN
RF
OUT
V
GG
Functional Schematic
DESCRIPTION
The ITT3502D is a two stage, single ended MMIC
low noise amplifier fabricated using GaAsTEK’s
mature GaAs Self-Aligned MSAG® MESFET
Process. This product is fully matched to 50
ohms on both the input and the output. It is
intended for use as a gain block or a low noise
amplifier.
MAXIMUM RATINGS
(T
Rating
DC Drain Supply Voltage
DC Gate Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
A
= 25 °C unless otherwise noted)
Symbol
V
DD
V
GG
P
IN
T
J
T
STG
Value
8
-4
20
150
-40 to +150
Unit
Vdc
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
=3.0 V, V
GG
≈
-0.6V (set to 25%I
DSS
), P
IN
= -20 dBm, T
A
=25 °C
Characteristic
Frequency
Output Power
(fixed –0.6V bias)
Noise Figure
Gain
Gain Flatness Over Frequency
Drain Current
(small signal)
Input VSWR
Output VSWR
Third-Order Intercept Point
Thermal Resistance
(Junction of FET to base of GaAs)
Symbol
ƒ
P
1dB
NF
G
I
DS
IP
3
R
TH
Min
11.0
9
Typ
12
2.7
11
+/- 1.0
30
3:1
2:1
25
94
Max
16.0
3.4
13
50
Unit
GHz
dBm
dB
dB
dB
mA
dBm
°C/W
Specifications Subject to Change Without Notice
902190 D, August 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
1
Low Noise Driver Amplifier Die (11.0 – 16.0 GHz)
ITT3502D
TYPICAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
11
100
90
80
70
60
50
40
30
20
10
0
16
14
12
Gain(dB), NF (dB)
10
8
6
4
2
0
11
12
13
14
15
16
Frequency (GHz)
Figure 2. Noise Figure and Small Signal Gain vs.
Frequency
Conditions: V
DD
= 3 Volts, V
GG
= -0.6 Volts
NF
Gain
P
OUT
(dBm), Gain (dB)
I
DS
P
OUT
Gain
12
13
14
15
Frequency (GHz)
Figure 1. Output Power (P
1dB
), Gain, and Drain Current
Vs. Frequency
Conditions: V
DD
= 5 Volts, V
GG
= -0.6 Volts
20
18
16
14
12
10
8
6
4
2
0
I
DS
(mA)
0
P
OUT
Pout (dBm), Gain (dB)
S
11
(dB), S
22
(dB)
-5
-10
-15
S
11
S
22
Gain
-20
-25
-10 -8
-6
-4
-2 0 2
Pin (dBm)
4
6
8
10
11
12
13
14
Frequency (GHz)
15
16
Figure 3. Output Power and Gain vs. Input Power
Conditions: V
DD
= 5 Volts, V
GG
= -0.6 Volts, Freq = 13 GHz
Figure 4. Input and Output Return Loss vs. Frequency
Conditions: V
DD
= 3 Volts, V
GG
= -0.6 Volts
Specifications Subject to Change Without Notice
902190 D, August 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
2
Low Noise Driver Amplifier Die (11.0 – 16.0 GHz)
ITT3502D
APPLICATION INFORMATION
750
µ
m
Assembly:
Chip dimensions:
2.725 mm x 1.245 mm,
.003” thickness.
Die attach:
Use AuSn (80/20) 1 mil. preform
solder. Limit time @ 300
°C
to less than 5
minutes.
Wirebonding:
Bond @ 160
°C
using standard
ball or thermal compression wedge bond
techniques. For DC pad connections, use
either ball or wedge bonds. For best RF
performance, use wedge bonds of shortest
length, although ball bonds are also
acceptable.
Required Bonds:
All RF and DC connections
must be made, but ground bonds are not
required.
Biasing:
User must apply negative bias to V
GG
before
applying positive bias to V
DD
to prevent damage
to amplifier.
RF
IN
1700
µ
m
865
µ
m
RF
OUT
790
µ
m
Figure 5. Bonding diagram
Specifications Subject to Change Without Notice
902190 D, August 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
3
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