4W Power Amplifier (12.5 – 14.5 GHz)
ITT8507
FEATURES
•
•
•
•
20% Typical Power Added Efficiency
High Linear Gain: 17 dB typical
50
Ω
Input/Output Impedance
®
Self-Aligned MSAG MESFET Process
V
DD
N/C
RF
IN
N/C
V
GG
ITT
8507FN
V
DD
N/C
RF
OUT
N/C
V
GG
GND
N/C
RF
IN
V
GG
GND
ADVANCED
INFORMATION
N/C
GND
ITT
8507FP
RF
OUT
N/C
V
DD
FN Package
Pin Configuration
FP Package
Pin Configuration
DESCRIPTION
The ITT8507 is a three stage MMIC power
amplifier fabricated using GaAsTEK’s mature
®
GaAs Self-Aligned MSAG MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
Rating
DC Drain Supply Voltage
DC Gate Supply Voltage
Power Dissipation
(T
BASE
= 70 °C)
RF Input Power
Junction Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
DISS
P
IN
T
J
T
STG
Value
12
-4
-
500
150
-40 to +85
Unit
Vdc
Vdc
W
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
= 8.0 V, I
DQ
= 2.1 A, T
A
=25 °C
Characteristic
Frequency
Output Power, Saturated (P
IN
= 23 dBm)
Gain at P
SAT
(P
IN
= 23 dBm)
Power Added Efficiency at P
SAT
(P
IN
= 23 dBm)
Drain Current at P
SAT
Output Power, P
1dB
Power Gain, P
1dB
Gain Flatness Over Frequency
Power Added Efficiency, P
1dB
Drain Current at P
1dB
Third-Order Intercept Point
Harmonics (ƒ
ο
=14.0 GHz, P
OUT
=20 dBm)
Gate Bias Voltage (No RF Input)
Gate Current (P
IN
= 23 dBm)
Stability
Symbol
Min
Typ
Max
Unit
12.5
14.5
GHz
ƒ
36.8
dBm
P
SAT
G
SAT
–
13.8
–
dB
–
21
–
%
η
SAT
I
DS, SAT
–
2.6
–
A
36.0
dBm
P
1dB
15.5
dB
G
1dB
-
+/- 0.5
dB
19
%
η
I
DS, 1dB
–
2.5
–
A
IP
3
–
43
–
dBm
–
-63
–
dBc
2ƒ
ο
V
GG
–
-1.9
–
V
I
GG
–
–
5
mA
All non-harmonically related outputs less than -50 dBc
Specifications Subject to Change Without Notice
902542 A, October 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
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