Silicon Bipolar MMIC 1.5 GHz
Variable Gain Amplifier
Technical Data
IVA-05128
Features
•
50 MHz to 1.5 GHz
Bandwidth
•
Data Rates up to 2.0 Gbit/s
•
High Gain:
26 dB Typical
•
Wide Gain Control Range:
30 dB Typical
•
Differential Output
Capability
•
Bias V
CC
- V
ee
= 5 V
•
5 V TTL Compatible V
gc
Control Voltage, l
gc
< 3 mA
•
Hermetic Ceramic Surface
Mount Package
28 Package
Description
The IVA-05128 is a variable gain
amplifier housed in a miniature
ceramic hermetic surface mount
package. It is designed for narrow
or wide bandwidth commercial,
industrial and military
applications that require high gain
and wide gain control range. The
amplifier can be used in a single-
ended or differential output
configuration. For low frequency
applications (<50 MHz) a bypass
capacitor and series resistor are
connected to pin 4, the AC Input
Ground lead.
Typical applications include
variable gain amplification for
fiberoptic systems at data rates in
excess of the 1.24 Gb/s SONET
standard, mobile radio and
satellite receivers, millimeter
wave receiver IF amplifiers and
communications receivers.
The IVA series of variable gain
amplifiers is fabricated using HP’s
10 GHz f
T
, 25 GHz f
MAX
ISOSAT
TM
-I
silicon bipolar process. This
process uses nitride self-
alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide inter-metal
dielectric and scratch protection
to achieve excellent performance,
uniformity and reliability.
PIN 1
Typical Biasing Configuration and
Functional Block Diagram
6-173
5965-9974E
Absolute Maximum Ratings
Parameter
Device Voltage
Power Dissipation
[2,3]
Input Power
V
gc
- V
ee
Junction Temperature
Storage Temperature
Absolute
Maximum
[1]
8V
600 mW
+14 dBm
7V
200°C
-65°C to 200°C
Thermal Resistance:
[2,4]
θ
jc
= 50°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 20 mW/°C for T
C
>170°C.
4. See MEASUREMENTS section
"’Thermal Resistance” in
Communications Components Catalog,
for more information.
Electrical Specifications
[1]
,
T
A
= 25°C
Symbol
G
P
∆G
P
f
3dB
GCR
ISO
VSWR
NF
P
1dB
IP
3
t
D
I
CC
Parameters and Test Conditions
[2]
:
V
CC
= 5 V, V
ee
= 0 V, V
gc
= 0 V, Z
O
= 50
Ω
Power Gain |S
21
|
[2]
Gain Flatness
3 dB Bandwidth
[3]
Gain Control Range
[4]
Reverse Isolation (|S
12
|
[2]
)
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power
at 1 dB Compression
Output Third Order
Intercept Point
Group Delay
Supply Current
f = 0.5 GHz, V
gc
= 0 to 5 V
f = 0.5 GHz, V
gc
= 0 to 5 V
f = 0.05 to 1.5 GHz, V
gc
= 0 to 5 V
f = 0.05 to 1.5 GHz, V
gc
= 0 to 5 V
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
dB
dBm
dBm
psec
mA
25
f = 0.5 GHz
f = 0.05 to 1.0 GHz
Units
dB
dB
GHz
dB
dB
1.0
25
Min.
20
Typ. Max.
26
±
0.3
1.5
30
45
1.7:1
1.5:1
9
-2
8
400
35
45
Notes:
1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following
page.
2. As measured using Input Pin 1 and Output Pin 6; with Output Pin 7 terminated into 50 ohms.
3. Referenced from 50 MHz Gain.
4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2 V
may result in gain increase rather than gain decrease.
6-174
IVA-05128 Typical Performance, T
A
= 25
°
C, V
CC
= 5 V, V
ee
= 0 V
(unless otherwise noted)
30
V
gc
< 2.5 V
20
28
P
1 dB
(dBm)
–2
30
0
P
1 dB
40
45
10
G
P
(dB)
0
4.0 V
5.0 V
–20
–30
0.1
22
G
P
(dB)
3.7 V
26
24
–6
G
P
–8
I
CC
30
–10
25
20
0.2
0.5
1.0
2.0
4.0
RF FREQUENCY (GHz)
–10
3
4
5
V
CC
(V)
6
7
20
Figure 1. Typical Variable Gain vs.
Frequency.
Figure 2. Power Gain and P
1 dB
at
0.5GHz and I
CC
vs. Bias Voltage with
V
gc
= 0 V.
45
30
5
30
1
20
28
P
1 dB
(dBm)
G
P
(dB)
0
G
P
I
CC
I
CC
(mA)
35
40
P
1 dB
(dBm)
10
G
P
4
26
–1
0
P
1 dB
2
24
–2
P
1 dB
30
–10
1
I
gc
22
–3
–55
–25
+25
+85
25
+125
–20
0
1
2
V
gc
(V)
3
4
5
0
TEMPERATURE (C)
Figure 3. Power Gain and P
1 dB
at
0.5GHz and I
CC
vs. Case Temperature
with V
gc
= 0 V.
0
G
P
= 15 –25 dB
–5
Figure 4. Power Gain and P
1 dB
at
0.5GHz and I
gc
vs. Gain Control
Voltage.
25
20
P
1 dB
(dBm)
–10
G
P
= 5 dB
–15
G
P
= 10 dB
NF (dB)
15
G
P
= 15 dB
10
–20
G
P
= –5 dB
–25
0.1
0.2
0.5
1.0
2.0
4.0
5
0.1
0.2
0.5
1.0
2.0
4.0
G
P
= 25 dB
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. P
1 dB
vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-175
I
gc
(mA)
3
I
CC
(mA)
–4
35
IVA-05128 Typical Performance, T
A
= 25
°
C, V
CC
= 5 V, V
ee
= 0 V,
continued
(unless otherwise noted)
2
INPUT
500
G
P
= –5 dB
t
D
(psec)
VSWR
G
P
= 25 dB
1.5
OUTPUT
400
G
P
= 5 dB
1
0.1
0.2
0.5
1.0
2.0
4.0
300
0.1
0.2
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency, V
gc
= 0–5 V.
Figure 8. Group Delay vs. Frequency.
28 Package Outline
1
2
8
1.27 (0.050) TYP.
7
V051
3
4
6
5
TOP VIEW
4.57
±
0.13
(0.180
±
0.005 SQ)
5.33
±
0.25
(0.210
±
0.010)
8° MAX.
0.38
±
0.08
(0.015
±
0.003)
0.76
±
0.13
(0.030
±
0.005)
2.08
±
0.25
(0.082
±
0.010)
END VIEW
0.13
±
0.05
(0.005
±
0.002)
2.54
±
0.25
(0.100
±
0.010)
10.16
±
0.25
(0.400
±
0.010)
0.08
±
0.08
(0.003
±
0.003)
1.78
±
0.25
(0.070
±
0.010)
SIDE VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-176
