IXA37IF1200HJ
XPT IGBT
V
CES
I
C25
=
=
1200 V
58 A
1.8 V
V
CE(sat)
=
Copack
Part number
IXA37IF1200HJ
Backside: isolated
2 (C)
(G) 1
3 (E)
Features / Advantages:
●
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
●
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
●
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
●
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
●
AC motor drives
●
Solar inverter
●
Medical equipment
●
Uninterruptible power supply
●
Air-conditioning systems
●
Welding equipment
●
Switched-mode and resonant-mode
power supplies
●
Inductive heating, cookers
●
Pumps, Fans
Package:
ISOPLUS247
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
© 2010 IXYS all rights reserved
IXA37IF1200HJ
IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
Ratings
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Conditions
T
VJ
=
25°C
min.
typ.
max.
1200
±20
±30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
T
C
= 25°C
T
C
= 80 °C
T
C
= 25°C
I
C
=
35 A; V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
0.1
5.4
1.8
2.1
5.9
58
37
195
2.1
6.5
0.1
500
gate emitter threshold voltage
collector emitter leakage current
I
C
= 1.5 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
=
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
35 A
106
70
40
250
100
3.8
4.1
inductive load
V
CE
=
600 V; I
C
=
35 A
V
GE
= ±15 V; R
G
= 27
Ω
T
VJ
= 125 °C
V
GE
= ±15 V; R
G
= 27
Ω
V
CEmax
= 1200 V
V
CEmax
= 900 V
V
CE
= 900 V; V
GE
= ±15 V
R
G
= 27
Ω;
non-repetitive
T
VJ
= 125 °C
105
T
VJ
= 125 °C
140
0.25
10
A
µs
A
0.64 K/W
K/W
Diode
V
RRM
I
F25
I
F 80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80 °C
I
F
=
30 A
T
VJ
= 25°C
T
VJ
= 125°C
1.95
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
-di
F
/dt = -600 A/µs
I
F
=
30 A; V
GE
= 0 V
T
VJ
= 125°C
*
3.5
30
350
0.9
0.25
1200
42
25
2.20
*
V
A
A
V
V
mA
mA
µC
A
ns
mJ
reverse current
* not applicable, see Ices value above
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
V
R
= V
RRM
1.2 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
© 2010 IXYS all rights reserved
IXA37IF1200HJ
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
ISOPLUS247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
150
125
150
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
6
20
2.7
4.1
3600
3000
120
Product Marking
Part number
I
X
A
37
IF
1200
HJ
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
ISOPLUS247 (3)
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
ISOPLUS®
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Part Number
IXA37IF1200HJ
Marking on Product
IXA37IF1200HJ
Delivery Mode
Tube
Quantity
30
Code No.
507993
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 150 °C
IGBT
Diode
V
0 max
R
0 max
1.1
39
1.25
28.3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
© 2010 IXYS all rights reserved
IXA37IF1200HJ
Outlines ISOPLUS247
A
E
Q
E1
D2
A2
Dim.
1
L1
2
3
3x b
2x b2
b4
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
Millimeter
min
max
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.20
2.92
3.24
0.61
0.83
20.80
21.34
15.75
16.26
1.65
2.15
20.30
20.70
15.75
16.13
13.21
13.72
5.45 BSC
19.81
20.60
3.81
4.38
5.59
6.20
4.25
5.50
-
0.10
Inches
min
max
0.190
0.205
0.090
0.100
0.075
0.085
0.045
0.055
0.075
0.087
0.115
0.128
0.024
0.033
0.819
0.840
0.620
0.640
0.065
0.085
0.799
0.815
0.620
0.635
0.520
0.540
0.215 BSC
0.780
0.811
0.150
0.172
0.220
0.244
0.167
0.217
-
0.004
R
L
D3
D
D1
c
A1
2x e
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und L
max.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max.
W
2 (C)
(G) 1
3 (E)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
© 2010 IXYS all rights reserved
IXA37IF1200HJ
IGBT
70
60
50
V
GE
= 15 V
70
60
50
V
GE
= 15 V
17 V
19 V
13 V
70
60
11 V
50
I
C
[A]
40
30
20
10
0
0
T
VJ
= 25°C
T
VJ
= 125°C
I
C
40
[A]
30
20
10
0
T
VJ
= 125°C
9V
I
C
40
[A]
30
20
10
0
0
1
2
3
4
5
5
6
7
8
9
10 11 12 13
T
VJ
= 125°C
T
VJ
= 25°C
1
2
3
V
CE
[V]
Fig. 1 Typ. output characteristics
V
CE
[V]
Fig. 2 Typ. output characteristics
V
GE
[V]
Fig. 3 Typ. tranfer characteristics
20
10
15
I
C
= 35 A
V
CE
= 600 V
E
8
R
G
= 27
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
6
I
C
=
35 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
V
GE
10
6
E
off
5
E
[mJ]
E
off
4
[V]
5
[mJ]
4
2
0
0
20
40
60
80 100 120 140
0
0
20
40
60
80
3
20
40
60
80
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
I
C
[A]
Fig. 5 Typ. switching energy
vs. collector current
R
G
[W]
Fig. 6 Typ. switching energy
vs. gate resistance
1
Z
thJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
t
p
[s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
© 2010 IXYS all rights reserved
