IXA4I1200UC
preliminary
XPT IGBT
V
CES
I
C25
=
=
1200 V
9A
1.8 V
V
CE(sat)
=
Single IGBT
Part number
IXA4I1200UC
Marking on Product: X4TAU
Backside: collector
(C) 2+4
(G) 1
(E) 3
Features / Advantages:
●
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
●
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
●
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
Applications:
●
AC motor drives
●
Solar inverter
●
Medical equipment
●
Uninterruptible power supply
●
Air-conditioning systems
●
Welding equipment
●
Switched-mode and resonant-mode
power supplies
●
Inductive heating, cookers
●
Pumps, Fans
Package:
TO-252 (DPak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20120917
© 2012 IXYS all rights reserved
IXA4I1200UC
preliminary
IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C100
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
Ratings
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Conditions
T
VJ
=
25°C
min.
typ.
max.
1200
±20
±30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
T
C
= 25°C
T
C
= 100 °C
T
C
= 25°C
I
C
=
3 A; V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
0.1
5.4
1.8
2.1
5.9
9
5
45
2.1
6.5
0.1
500
gate emitter threshold voltage
collector emitter leakage current
I
C
= 0.1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
=
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
3A
12
70
40
250
100
0.4
0.3
inductive load
V
CE
=
600 V; I
C
=
3A
V
GE
= ±15 V; R
G
= 330
Ω
T
VJ
= 125 °C
V
GE
= ±15 V; R
G
= 330
Ω
V
CEmax
= 1200 V
V
CEmax
= 900 V
V
CE
= 900 V; V
GE
= ±15 V
R
G
= 330
Ω;
non-repetitive
T
VJ
= 125 °C
9
T
VJ
= 125 °C
12
0.50
10
A
µs
A
2.7 K/W
K/W
Diode
V
RRM
I
F25
I
F 100
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 100 °C
I
F
=
3A
T
VJ
= 25°C
T
VJ
= 125°C
tbd
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
-di
F
/dt =
I
F
=
A/µs
T
VJ
= 125°C
3 A; V
GE
= 0 V
*
tbd
tbd
tbd
tbd
1200
tbd
tbd
tbd
*
V
A
A
V
V
mA
mA
µC
A
ns
mJ
reverse current
* not applicable, see Ices value above
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
V
R
= V
RRM
tbd K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20120917
© 2012 IXYS all rights reserved
IXA4I1200UC
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-252 (DPak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
20
150
125
150
Unit
A
°C
°C
°C
g
N
0.3
20
60
Product Marking
Part number
I
X
A
4
I
1200
UC
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Single IGBT
Reverse Voltage [V]
TO-252AA (DPak)
Logo
Part number
IXYS
abcdefg
Z YY
WW
Assembly Line
Date Code
Ordering
Standard
Part Number
IXA4I1200UC
Marking on Product
X4TAU
Delivery Mode
Quantity
Code No.
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 150 °C
IGBT
V
0 max
R
0 max
1.1
460
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20120917
© 2012 IXYS all rights reserved
IXA4I1200UC
preliminary
Outlines TO-252 (DPak)
(C) 2+4
(G) 1
(E) 3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20120917
© 2012 IXYS all rights reserved
