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IXDF404SIA-16

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers

厂商名称:IXYS ( Littelfuse )

厂商官网:http://www.ixys.com/

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IXDN404 / IXDI404 / IXDF404
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
General Description
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
Applications
Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
Limiting di/dt Under Short Circuit
Ordering Information
Part Number
IXDN404PI
IXDN404SI
IXDN404SIA
IXDN404SI-16
IXDN404SIA-16
IXDI404PI
IXDI404SI
IXDI404SIA
IXDI404SI-16
IXDI404SIA-16
IXDF404PI
IXDF404SI
IXDF404SIA
IXDF404SI-16
IXDF404SIA-16
Package Type
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
Temp. Range
-55°C to
+125°C
Configuration
Dual Non
Inverting
-55°C to
+125°C
Dual Inverting
-55°C to
+125°C
Inverting +
Non Inverting
NOTE:
Mounting or solder tabs on all packages are connected to ground
Copyright © IXYS CORPORATION 2004
DS99018B(08/04)
First Release
IXDN404 / IXDI404 / IXDF404
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
Vcc
IN A
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT A
N
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT B
N
GND
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Vcc
IN A
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT A
N
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT B
N
GND
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
Vcc
IN A
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT A
N
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT B
N
* Patent Pending
GND
2
IXDN404 / IXDI404 / IXDF404
Absolute Maximum Ratings
(Note 1)
Parameter
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Value
40V
-0.3V to VCC + 0.3V
150oC
-65oC to 150oC
300oC
Operating Ratings
Parameter
Operating Temperature Range
-55 oC to 125 oC
Value
Soldering Lead Temperature
(10 seconds maximum)
Thermal Resistance (Junction to Case)
(
θ
JC
)
8 Pin SOIC (SI)
10 K/W
16 Pin SOIC (SI-16)
10 K/W
Electrical Characteristics
Symbol
V
IH
V
IL
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
PEAK
I
DC
t
R
t
F
t
ONDLY
t
OFFDLY
V
CC
I
CC
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
Output resistance
@ Output High
Output resistance
@ Output Low
Peak output current
Continuous output
current
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
Power supply current
V
CC
= 18V
V
CC
= 18V
V
CC
= 18V
0V
V
IN
V
CC
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θ
JA
)
120 K/W
8 Pin SOIC (SIA)
110 K/W
110 K/W
16 Pin SOIC (SIA-16) (θ
JA
)
θ
JA
with heat sink **
Heat sink area of 1 cm
2
8 Pin SOIC
95 K/W
16 Pin SOIC-CT
95 K/W
2
Heat sink area of 3 cm
8 Pin SOIC
85 K/W
16 Pin SOIC-CT
85 K/W
**
Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
Unless otherwise noted, T
A
= 25
o
C, 4.5V
V
CC
35V .
All voltage measurements with respect to GND. Device configured as described in
Test Conditions.
All specifications are for one channel.
Test Conditions
4.5V
V
CC
18V
4.5V
V
CC
18V
Min
2.5
Typ
Max
0.8
Units
V
V
V
µA
V
-5
-10
V
CC
- 0.025
V
CC
+ 0.3
10
0.025
2
1.5
4
1
C
L
=1800pF Vcc=18V
C
L
=1800pF Vcc=18V
C
L
=1800pF Vcc=18V
C
L
=1800pF Vcc=18V
4.5
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
16
13
36
35
18
1
0
18
17
40
39
35
3
10
10
2.5
2
V
A
A
ns
ns
ns
ns
V
mA
µA
µA
Specifications Subject To Change Without Notice
Note 1:
Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
IXDN404 / IXDI404 / IXDF404
Electrical Characteristics
Unless otherwise noted, temperature over -55
o
C to 150
o
C, 4.5V
V
CC
35V .
All voltage measurements with respect to GND. Device configured as described in
Test Conditions.
All specifications are for one channel.
Symbol
V
IH
V
IL
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
PEAK
I
DC
t
R
t
F
t
ONDLY
t
OFFDLY
V
CC
I
CC
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
Output resistance
@ Output High
Output resistance
@ Output Low
Peak output current
Continuous output
current
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
Power supply current
Test Conditions
4.5V
V
CC
18V
4.5V
V
CC
18V
Min
2.4
Typ
Max
0.8
Units
V
V
V
µA
V
-5
0V
V
IN
V
CC
-10
V
CC
- 0.025
V
CC
+ 0.3
10
0.025
V
CC
= 18V
V
CC
= 18V
V
CC
= 18V
3.2
1
C
L
=1000pF Vcc=18V
C
L
=1000pF Vcc=18V
C
L
=1000pF Vcc=18V
C
L
=1000pF Vcc=18V
4.5
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
18
1
0
11
13
60
59
35
3
10
10
3.4
2
V
A
A
ns
ns
ns
ns
V
mA
µA
µA
Specifications Subject To Change Without Notice
4
IXDN404 / IXDI404 / IXDF404
Pin Description
SYMBOL
IN A
GND
IN B
OUT B
VCC
OUT A
FUNCTION
A Channel Input
Ground
B Channel Input
B Channel Output
Supply Voltage
A Channel Output
DESCRIPTION
A Channel Input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
B Channel Input signal-TTL or CMOS compatible.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 35V.
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 4 - Characteristics Test Diagram
Vcc
10uF
25V
4
1 NC
2 In A
3 Gnd
In B
NC 8
7
Out A
Vcc 6
Out B 5
Agilent 1147A
Current Probe
1800 pF
Agilent 1147A
Current Probe
1800 pF
5
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参数对比
与IXDF404SIA-16相近的元器件有:IXDI404SIA-16、IXDN404SIA、IXDN404SIA-16。描述及对比如下:
型号 IXDF404SIA-16 IXDI404SIA-16 IXDN404SIA IXDN404SIA-16
描述 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
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