PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS220
TM
(Electrically Isolated Back Surface)
IXFC 14N60P
V
DSS
= 600
V
I
D25
= 8
A
R
DS(on)
≤
630 mΩ
Ω
t
rr
≤
200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
Mounting Force
t = 1 minute leads-to-tab
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Tranisent
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
600
600
±
30
±
40
8
42
14
23
0.9
10
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°
C
V~
N/lb
g
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Applications
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
ISOPLUS220
TM
(IXFC)
E153432
G
D
S
(Isolated back surface)
G = Gate
S = Source
D = Drain
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
, Note 1
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.5
5.5
±100
5
50
630
V
V
nA
µA
µA
m
Ω
Advantages
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
l
© 2006 IXYS All rights reserved
DS99409E(02/06)
IXFC 14N60P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ. Max.
7
13
2300
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
215
13
23
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 4
Ω
(External)
27
70
26
38
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
14
12
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.25
°
C/W
0.21
°
C/W
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS220
TM
(IXFC) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= I
T
, Note 1
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V, Note 1
I
F
= 14A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
Characteristic Values
(T
J
= 25° C unless otherwise specified)
min. Typ. max.
8
42
1.5
200
6
1.0
A
A
V
ns
A
µC
Ref: IXYS CO 0177 R0
Notes:
1. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %;
Test current I
T
= 7 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFC 14N60P
Fig. 1. Output Characteristics
@ 25ºC
14
12
10
V
GS
= 10V
9V
30
27
24
8V
21
V
GS
= 10V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
8
6
4
7V
2
18
15
12
9
6
3
8V
7V
0
3
6
9
12
15
18
21
24
27
30
0
0
1
2
3
4
5
6
7
8
0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
14
12
10
V
GS
= 10V
8V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 7A Value vs.
Junction Temperature
V
GS
= 10V
2.8
R
DS(on)
- Normalized
2.4
2
1.6
1.2
0.8
I
D
- Amperes
8
6
4
2
7V
I
D
= 14A
I
D
= 7A
6V
0
0
2
4
6
8
10
12
14
16
18
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 7A Value vs.
Drain Current
9
Fig. 6. Maximum Drain Current v s.
Case Temperature
8
3.2
V
GS
= 10V
2.8
R
DS(on)
- Normalized
T
J
= 125ºC
7
2.4
I
D
- Amperes
T
J
= 25ºC
0
3
6
9
12
15
18
21
24
27
30
6
5
4
3
2
1
0
-50
-25
0
25
50
75
100
125
150
2
1.6
1.2
0.8
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS All rights reserved
IXFC 14N60P
Fig. 7. Input Admittance
50
45
40
35
30
25
20
15
10
5
0
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
T
J
= 125ºC
25ºC
- 40ºC
27
24
21
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
18
15
12
9
6
3
0
0
5
10
15
20
25
30
35
40
45
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
45
40
35
10
9
8
7
V
DS
= 300V
I
D
= 11A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
30
25
20
15
10
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T
J
= 25ºC
T
J
= 125ºC
V
GS
- Volts
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
f = 1 MHz
100
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
R
DS(on)
Limit
1,000
C iss
25µs
I
D
- Amperes
10
1ms
10ms
1
100µs
100
C oss
10
C rss
T
J
= 150ºC
T
C
= 25ºC
0
DC
1
0
5
10
15
20
25
30
35
40
10
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 14N60P
Fig. 13. Maximum Transient Thermal Resistance
10.00
R
(th)JC
- ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
IXYS REF: F_14N60P (5J) 02-27-06-C.xls
Microchip MCU
