PolarHV
TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 22N60P
IXFV 22N60P
IXFV 22N60PS
V
DSS
= 600
V
I
D25
= 22
A
R
DS(on)
≤
350 m
Ω
t
rr
≤
200 ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting Force
(TO-247)
(PLUS220)
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Tranisent
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
600
600
±30
±40
22
66
22
40
1.0
20
400
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G
S
D (TAB)
D = Drain
TAB = Drain
G
D
S
G
D
D (TAB)
S
PLUS220 (IXFV)
D (TAB)
PLUS220SMD (IXFV...S)
1.13/10 Nm/lb.in.
11..65/2.5..15
Nm/lb.
6
4
g
g
TO-247
PLUS220 & PLUS220SMD
G = Gate
S = Source
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±100
25
250
350
V
V
nA
µA
µA
m
Ω
Features
l
Fast intrinsic diode
l
Unclamped Inductive Switching (UIS)
rated
l
International standard packages
l
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
l
Space savings
l
High power density
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99315E(03/06)
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
15
20
3600
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
305
38
20
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4
Ω
(External)
20
60
23
58
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
22
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31
°
C/W
0.21
°
C/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
22
66
1.5
200
1.0
A
A
V
ns
µC
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 26A
-di/dt = 100 A/µs
V
R
= 100V, V
GS
= 0 V
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 1. Output Characte ris tics
@ 25
º
C
22
20
18
16
V
GS
= 10V
8V
45
40
35
30
7.5V
V
GS
= 10V
9V
8V
7.5V
Fig. 2. Exte nde d Output Characte ris tics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
25
20
15
10
6.5V
6V
0
3
6
9
12
15
18
21
24
27
30
7V
7V
6V
5
0
7
8
9
V
D S
- V olts
Fig. 3. Output Characte ris tics
@ 125
º
C
22
20
18
16
V
GS
= 10V
8V
7V
3.4
3.1
V
GS
= 10V
V
D S
- V olts
Fig. 4. R
DS(on
)
Norm alize d to I
D
= 11A
V alue vs . Junction Te m pe rature
R
D S ( o n )
- Normalized
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 11A
I
D
= 22A
I
D
- Amperes
14
12
10
8
6
4
2
0
0
2
4
6
5.5V
5V
8
10
12
14
16
18
20
6V
6.5V
V
D S
- V olts
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
24
Fig. 5. R
DS(on)
Nor m alize d to
I
D
= 11A V alue vs . Dr ain Curr e nt
3
2.8
2.6
V
GS
= 10V
T
J
= 125
º
C
20
16
R
D S ( o n )
- Normalized
2.4
2
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
T
J
= 25
º
C
I
D
- Amperes
2.2
12
8
4
0
I
D
- A mperes
20
25
30
35
40
45
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
© 2006 IXYS All rights reserved
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 7. Input Adm ittance
30
27
24
30
27
24
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Trans conductance
I
D
- Amperes
18
15
12
9
6
3
0
4.5
5
5.5
6
6.5
7
7.5
8
T
J
= 125
º
C
25
º
C
-40
º
C
- Siemens
fs
21
21
18
15
12
9
6
3
0
0
g
3
6
9
12
15
18
21
24
27
30
V
G S
- V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
70
60
50
10
9
8
7
V
DS
= 300V
I
D
= 11A
I
G
= 10m A
I
D
- A mperes
Fig. 10. Gate Char ge
I
S
- Amperes
V
G S
- Volts
T
J
= 25
º
C
0.8
0.9
1
1.1
40
30
20
10
0
0.4
0.5
0.6
0.7
6
5
4
3
2
1
0
T
J
= 125
º
C
V
S D
- V olts
Fig. 11. Capacitance
10000
f = 1MH z
C iss
100
0
10
20
30
40
50
60
Q
G
- nanoCoulombs
Fig. 12. For w ard-Bias
Safe Ope rating Are a
R
DS(on)
Lim it
Capacitance - picoFarads
C oss
I
D
- Amperes
1000
25µs
100µs
1m s
10m s
10
100
C rs s
T
J
= 150ºC
T
C
= 25ºC
DC
10
0
5
10
15
1
V
D S
- V olts
20
25
30
35
40
10
100
1000
V
D S
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 13. Maxim um Transient Therm al Resistance
1.00
R
( t h ) J C
-
º
C / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_22N60P (6J) 02-17-06-B
