PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
V
DSS
= 150 V
I
D25
= 96 A
R
DS(on)
≤
24 mΩ
Ω
t
rr
≤
200 ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
175° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
150
150
±20
±30
96
75
250
60
40
1.0
10
480
-55 ... +175
175
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
N/lb
l
l
G
D
S
(TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV__S)
G
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
Mounting torque
TO-247
PLUS220
(PLUS220)
(TO-247)
300
260
11...65/2.4...11
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
6
4
g
g
l
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 175° C
Characteristic Values
Min. Typ.
Max.
150
3.0
5.0
±100
25
1000
24
V
V
nA
µA
µA
m
Ω
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99208E(12/05)
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
35
45
3500
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1000
280
30
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 4
Ω
(External)
33
66
18
110
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
26
59
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31° C/W
(TO-247, PLUS220)
0.21
°
C/W
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
1
2
3
TO-247 (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
PLUS220SMD (IXFV__S) Outline
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
96
250
1.5
A
A
V
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
600
6
200 ns
nC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig. 1. Output Characteristics
@ 25
º
C
100
90
80
70
V
GS
= 10V
9V
200
175
150
V
GS
= 10V
Fig. 2. Extended Output Characteristics
@ 25
º
C
9V
I
D
- Amperes
I
D
- Amperes
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
6V
7V
8V
125
100
8V
75
50
25
0
0
2
4
6
7V
6V
8
10
12
14
16
18
20
V
D S
- Volts
Fig. 3. Output Characteristics
@ 150
º
C
100
90
80
V
GS
= 10V
9V
2.8
2.6
2.4
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
R
D S ( o n )
- Normalized
I
D
- Amperes
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
7V
6V
5V
2.5
3
3.5
4
4.5
5
5.5
8V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I
D
= 96A
I
D
= 48A
V
D S
- Volts
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70
T
J
= 175ºC
60
External Lead Current
Limit
Fig. 5. R
DS(on)
Norm alized to
3.8
3.4
0.5 I
D25
Value vs. I
D
R
D S ( o n )
- Normalized
3
2.6
2.2
1.8
1.4
1
0.6
0
50
V
GS
= 15V
I
D
- Amperes
50
40
30
20
10
0
V
GS
= 10V
T
J
= 25ºC
I
D
- Amperes
100
150
200
250
-50
-25
0
T
C
- Degrees Centigrade
25
50
75
100
125
150
175
© 2006 IXYS All rights reserved
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig. 7. Input Adm ittance
180
160
140
60
50
T
J
= -40ºC
25ºC
150ºC
Fig. 8. Transconductance
g
f s
- Siemens
T
J
= 150ºC
25ºC
-40ºC
4
5
6
7
8
9
1
0
I
D
- Amperes
120
100
80
60
40
20
0
40
30
20
10
0
0
25
50
75
100
125
150
175
200
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
300
10
9
250
8
7
V
DS
= 75V
I
D
= 48A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
200
V
G S
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
6
5
4
3
2
1
0
150
100
50
0
V
S D
- Volts
Fig. 11. Capacitance
10000
f = 1MHz
1000
0
10
20
30
40
50
60
70
80
90 100 110
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Capacitance - picoFarads
R
DS(on)
Limit
I
D
- Amperes
C iss
100
25µs
100µs
1ms
10ms
1000
C oss
10
T
J
= 175ºC
DC
C rss
100
0
5
10
15
20
25
30
35
40
1
T
C
= 25ºC
V
DS
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
V
D S
- Volts
100
1000
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
1.00
R
( t h ) J C
- ºC / W
0.10
0.01
1
10
100
1000
Pu ls e W id th - m illis e c o n d s
© 2006 IXYS All rights reserved
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