Polar3
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA16N60P3
IXFP16N60P3
IXFH16N60P3
V
DSS
I
D25
R
DS(on)
= 600V
= 16A
470m
TO-263 (IXFA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
T
C
= 25C
Maximum Ratings
600
600
30
40
16
40
8
800
35
347
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
TO-220 (IXFP)
G
D
S
D (Tab)
TO-247 (IXFH)
G
D
S
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1.5mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.0
100
V
V
nA
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
25
A
1.5 mA
470 m
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2018 IXYS CORPORATION, All Rights Reserved
DS100419C(6/18)
IXFA16N60P3
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-247
0.50
0.21
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
10
17
2.3
1830
217
8.6
20
13
42
8
36
9
13
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.36
C/W
C/W
C/W
IXFP16N60P3
IXFH16N60P3
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V, Note1
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 8A, -di/dt = 100A/μs
V
R
= 100V
0.7
7.6
Characteristic Values
Min.
Typ.
Max
16
48
1.4
A
A
V
250
ns
C
A
Note 1. Pulse test, t
300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA16N60P3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
16
14
12
6V
V
GS
= 10V
7V
40
35
30
IXFP16N60P3
IXFH16N60P3
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
V
GS
= 10V
8V
7V
I
D
- Amperes
I
D
- Amperes
10
8
6
4
2
0
0
1
2
3
4
5
6
7
5V
25
20
6V
15
10
5
5V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 125 C
16
14
12
V
GS
= 10V
7V
6V
3.0
2.6
2.2
1.8
1.4
1.0
0.6
4V
0
0
2
4
6
8
10
12
14
16
0.2
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 8A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
= 16A
I
D
= 8A
I
D
- Amperes
10
8
6
4
2
5V
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.4
3.0
2.6
2.2
Fig. 5. R
DS(on)
Normalized to I
D
= 8A Value vs.
Drain Current
V
GS
= 10V
T
J
= 125 C
o
Fig. 6. Maximum Drain Current vs. Case Temperature
18
16
14
R
DS(on)
- Normalized
12
I
D
- Amperes
35
40
10
8
6
T
J
= 25 C
1.8
1.4
o
4
1.0
0.6
0
5
10
15
20
25
30
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA16N60P3
IXFP16N60P3
IXFH16N60P3
Fig. 7. Input Admittance
20
18
16
14
12
10
8
6
4
2
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
2
4
T
J
= 125 C
o
30
Fig. 8. Transconductance
T
J
= - 40 C
o
25
25 C
125 C
15
o
o
25 C
- 40 C
o
o
g
f s
- Siemens
20
I
D
- Amperes
10
5
6
8
10
12
14
16
18
20
22
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
50
45
40
35
10
9
8
7
V
DS
= 300V
I
D
= 8A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
25
20
15
10
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
J
= 125 C
T
J
= 25 C
o
o
V
GS
- Volts
30
6
5
4
3
2
1
0
0
4
8
12
16
20
24
28
32
36
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1
Fig. 12. Maximum Transient Thermal Impedance
f
= 1 MHz
Ciss
Capacitance - PicoFarads
1,000
100
Coss
Z
(th)JC
- K / W
35
40
0.1
0.01
10
Crss
1
0
5
10
15
20
25
30
0.001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_16N60P3(W5)11-29-11
IXFA16N60P3
TO-263 Outline
IXFP16N60P3
IXFH16N60P3
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
© 2018 IXYS CORPORATION, All Rights Reserved
移动便携
