HiPerFET
TM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
IXFR66N50Q2
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
500V
50A
85mΩ
Ω
250ns
Maximum Ratings
500
500
±
30
±
40
50
264
66
4
20
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb.
g
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Double metal process for low gate
resistance
• International standard package
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
300
260
2500
20..120/4.5..27
5
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 33A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ. Max.
500
3.0
5.5
±
200
V
V
nA
50
μA
2 mA
85 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99076A(05/08)
IXFR66N50Q2
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 33A
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 33A, Note 1
Characteristic Values
Min.
Typ.
Max.
30
44
9125
1200
318
32
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.25
°C/W
°C/W
ISOPLUS247 (IXFR) Outline
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 33A
R
G
= 1Ω (External)
16
60
10
200
47
98
Source-Drain Diode
T
J
= 25°C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
66
264
1.5
A
A
V
250 ns
1
10
μC
A
Note 1: Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR66N50Q2
Fig. 1. Output Characteristics
@ 25
°
C
70
V
GS
= 10V
60
50
8V
7V
6V
160
140
120
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics
@ 25
°
C
I
D
- Amperes
I
D
- Amperes
40
5.5V
30
20
10
0
0
1
2
3
4
5
6
7
5V
4.5V
100
7V
80
60
40
20
0
0
2
4
6
8
1
0
1
2
1
4
1
6
1
8
20
6V
5V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
°
C
70
60
50
V
GS
= 10V
7V
6V
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
14
-50
-25
0
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value
vs. Junction Temperature
40
30
20
10
3.5V
0
0
2
4
6
8
10
12
5V
R
D S ( o n )
- Normalized
I
D
- Amperes
I
D
= 66A
I
D
= 33A
4.5V
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value
vs. I
D
3.0
2.8
2.6
V
GS
= 10V
T
J
= 125
°
C
55
50
45
40
T
J
- Degrees Centigrade
Fig. 6. Drain Curre nt v s. Case
Te mpe rature
R
D S ( o n )
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
20
40
60
80
I
D
- Am
peres
T
J
= 25
°
C
100
120
140
160
35
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFR66N50Q2
Fig. 7. Input Admittance
100
90
80
90
80
70
T
J
= - 40
°
C
Fig. 8. Transconductance
60
50
40
30
20
10
0
3.0
3.5
4.0
T
J
= 125
°
C
25
°
C
- 40
°
C
g
f s
- Siemens
I
D
- Amperes
70
60
50
40
30
20
10
0
25
°
C
125
°
C
4.5
5.0
5.5
6.0
6.5
7.0
0
20
40
60
80
100
120
140
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
180
160
140
10
9
8
7
V
DS
= 250V
I
D
= 33A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 125
°
C
T
J
= 25
°
C
0.4
0.5
0.6
0.7
0.8
D
120
100
80
60
40
20
0
0.9
1.0
1.1
1.2
1.3
6
5
4
3
2
1
0
0
20
40
60
80
G
100 120 140 160 180 200
V
S
- Volts
Q
- nanoCoulombs
Fig. 11. Capacitance
100000
Fig. 12. Maximum Transient Thermal
Impedance
1.000
f
= 1MHz
Capacitance - picoFarads
C
iss
10000
Z
( t h ) J C
-
º
C / W
0.100
C
oss
1000
0.010
C
rss
100
0
5
10
15
20
25
30
35
40
0.001
0.0001
0.001
0.01
0.1
1
10
V
D S
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_66N50Q2 (94) 05-28-08-C
