HiPerFET
TM
Power MOSFETs
V
DSS
I
D25
R
DS(on)
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
IXFH/IXFT/IXFX14N100 1000 V
14 A 0.75
W
IXFH/IXFT/IXFX15N100 1000 V
15 A 0.70
W
t
rr
£
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
14N100
15N100
14N100
15N100
14N100
15N100
Maximum Ratings
1000
1000
±20
±30
14
15
56
60
14
15
45
5
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 AD
(IXFH)
(TAB)
PLUS 247
TM
(IXFX)
(TAB)
G
D
TO-268 (D3)
(IXFT)
G
S
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
6
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
AC motor control
q
Temperature and lighting controls
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
q
High power surface mountable package
q
High power density
97535B (1/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
250
1
0.75
0.70
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
14N100
15N100
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFH14N100
IXFH15N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
6
10
4500
430
150
27
30
120
30
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
220
30
85
0.35
(TO-247 Case Style)
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
W
(External),
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
-di/dt = 100 A/ms,
V
R
= 100 V
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
14N100
15N100
14N100
15N100
14
15
56
60
1.5
A
A
A
A
V
N
1.5 2.49
PLUS247
TM
(IXFX) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
T
J
T
J
T
J
T
J
T
J
T
J
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
200
350
1
2
10
15
ns
ns
mC
mC
A
A
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
TO-268AA (D
3
PAK)
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH14N100
IXFH15N100
20
T
J
= 25
O
C
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
16
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
5V
V
GS
= 9V
8V
7V
6V
5V
16
12
I
D
- Amperes
12
8
4V
I
D
- Amperes
8
4V
4
0
4
0
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
- Volts
V
DS
- Volts
Fig.1 Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T
J
= 25
O
C
V
GS
= 10V
T
J
= 125 C
O
Fig.2 Output characteristics at elevated
temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
25
I
D
= 15A
V
GS
= 10V
R
DS(ON)
- Normalized
R
DS(ON)
- Normalized
I
D
= 7.5A
0
3
6
9
12
15
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Fig.3 R
DS(on)
vs. Drain Current
20
16
IXF_15N100
Fig.4
14
12
Temperature Dependence of Drain
to Source Resistance
I
D
- Amperes
12
8
4
0
IXF_14N100
I
D
- Amperes
10
8
6
4
2
T
J
= 125
o
C
T
J
= 25
o
C
-50
-25
0
25
50
75
100 125 150
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
C
- Degrees C
V
GS
- Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6
Input admittance
© 2000 IXYS All rights reserved
3-4
IXFH14N100
IXFH15N100
12
10
V
DS
= 500V
Vds=300V
= 7.5A
I
D
=30A
= 10mA
I
G
=10mA
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
5000
Ciss
V
GS
- Volts
8
6
4
2
0
Capacitance - pF
2500
1000
500
Crss
Coss
f = 1MHz
250
100
0
40
80
120
160
200
240
280
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Fig.7 Gate Charge Characteristic Curve
40
Fig.8
Capacitance Curves
32
I
D
- Amperes
24
T
J
= 125
O
C
16
T
J
= 25
O
C
8
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
- Volts
Fig.9 Source current vs Source drain voltage.
1
R(th)
JC
- K/W
0.1
Single pulse
0.01
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
© 2000 IXYS All rights reserved
4-4
