V
CES
Low V
CE(sat)
IGBT
High speed IGBT
IXGH/IXGM 30 N60
IXGH/IXGM 30 N60A
600 V
600 V
I
C25
50 A
50 A
V
CE(sat)
2.5 V
3.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
50
30
100
I
CM
= 60
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
30N60
30N60A
2.5
3.0
V
V
µA
mA
nA
V
V
Features
International standard packages
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
l
l
l
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
© 1996 IXYS All rights reserved
91512E (3/96)
IXGH 30N60 IXGM 30N60
IXGH 30N60A IXGM 30N60A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
8
16
2800
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
230
70
150
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 300
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 33
Ω
Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, 30N60A
higher T
J
or increased R
G
30N60A
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V,
L = 300
µH
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 33
Ω
35
60
100
200
500
200
2
100
200
3
600
500
250
5.5
4.0
1000
1500
800
180
50
90
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.62 K/W
0.25
K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
30N60
Remarks: Switching times
30N60A
may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher 30N60
30N60A
T
J
or increased R
G
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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