HiPerFAST
TM
IGBTs
with Diode
C2-Class High Speed IGBTs
IXGN60N60C2
IXGN60N60C2D1
V
CES
=
I
C110
=
V
CE(sat)
≤
t
rr
=
600V
60A
2.5V
35ns
E
E
60C2
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz
I
ISOL
≤
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1 M
Ω
Continuous
Transient
T
C
= 25°C (Limited by Leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped Inductive Load
T
C
= 25°C
60C2D1
SOT-227B, miniBLOC
E153432
E
Maximum Ratings
600
600
±20
±30
75
60
300
I
CM
= 100
@ V
CE
≤
600
480
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
G
E
C
G = Gate, C = Collector, E = Emitter
Either Emitter Terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC
Aluminium Nitride Isolation
- High Power Dissipation
Anti-Parallel Ultra Fast Diode
Isolation Voltage 3000 V~
Low V
CE(sat)
for Minimum On-State
Conduction Losses
MOS Gate Turn-on
- Drive Simplicity
Low Collector-to-Case Capacitance
(< 50 pF)
Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Applications
Mounting Torque
Terminal Connection Torque (M4)
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
3.0
5.0
650
5
±100
T
J
= 125°C
2.1
1.8
2.5
V
μA
mA
nA
V
V
V
CE
= V
CES
V
GE
= 0V
V
CE
= 0V, V
GE
= ±20V
I
C
= 50A, V
GE
= 15V, Note 1
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
Advantages
Easy to Mount with 2 Screws
Space Savings
High Power Density
© 2009 IXYS CORPORATION, All Rights Reserved
DS99177A(01/09)
IXGN60N60C2
IXGN60N60C2D1
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
0.05
Inductive load, T
J
= 125°C
V
CE
= 400V, R
G
= 2
Ω
I
C
= 50A, V
GE
= 15V
Inductive load, T
J
= 25°C
V
CE
= 400V, R
G
= 2
Ω
I
C
= 50A, V
GE
= 15 V
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5 • V
CES
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 50A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
40
58
4750
530
65
146
28
50
18
25
95
35
0.48
18
25
0.90
130
80
1.20
0.80
150
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.26 °C/W
°C/W
SOT-227B miniBLOC
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, Unless Oherwise Specified)
V
F
I
RM
t
rr
R
thJC
I
F
= 60A, V
GE
= 0V, Note 1
I
F
= 60A, -di/dt = 100A/μs,
V
R
= 100V, V
GE
= 0V,
I
F
= 1A, -di/dt = 200A/μs, V
R
= 30V,V
GE
= 0V
T
J
= 150°C
T
J
= 100°C
35
Characteristic Values
Min. Typ.
Max.
2.1
1.4
8.3
V
V
A
ns
0.85 °C/W
Note 1: PulseTest, t
≤
300μs, Duty Cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGN60N60C2
IXGN60N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
1
00
90
80
V
G E
= 15V
13V
11
V
9V
1
75
1
50
200
V
G E
= 15V
13V
11
V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
9V
I
C
- Amperes
I
C
- Amperes
70
60
50
40
30
20
7V
1
25
1
00
75
50
7V
5V
1
0
0
0.5
1
1
.5
2
2.5
3
3.5
25
0
5V
1
1
.5
2
2.5
3
3.5
4
4.5
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
1
00
90
80
70
V
G E
= 15V
13V
11
V
9V
1
.1
1
.2
Fig. 4. T emperature Dependence of V
CE(sat)
V
C E (sat)
- Normalized
V
G E
= 15V
1
0.9
0.8
0.7
I
C
= 100A
I
C
- Am
peres
7V
60
50
40
30
20
1
0
0
0.5
1
1
.5
2
2.5
3
3.5
I
C
= 50A
5V
I
C
= 25A
0.6
0.5
25
50
75
1
00
1
25
1
50
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
5
4.5
4
T
J
= 25
º
C
200
1
75
1
50
Fig. 6. Input Admittance
V
CE
- Volts
3.5
3
2.5
2
1
.5
1
5
6
7
8
9
1
0
1
1
1
2
1
3
1
4
1
5
I
C
- Amperes
1
25
1
00
75
50
25
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
T
J
= 125
º
C
25
º
C
-40
º
C
I
C
= 100A
50A
25A
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN60N60C2
IXGN60N60C2D1
Fig. 7. T ransconductance
1
00
90
80
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of E
off
on R
G
6
5
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 400V
I
C
= 100A
E
off
- milliJoules
g
f s
- Siemens
70
60
50
40
30
20
1
0
0
0
25
4
I
C
= 75A
3
2
1
0
I
C
= 50A
I
C
= 25A
50
75
1
00
1
25
1
50
1
75
200
2
4
6
8
1
0
1
2
1
4
1
6
I
C
- Amperes
R
G
- Ohms
Fig. 9. Dependence of E
off
on I
C
5
R
G
= 2 Ohms
R
G
= 10 Ohms - - - - -
4
5
Fig. 10. Dependence of E
off
on T emperature
R
G
= 2 Ohms
R
G
= 10 Ohms - - - - -
4
T
J
= 125
º
C
I
C
= 100A
E
off
- MilliJoules
3
E
off
- milliJoules
V
G E
= 15V
V
C E
= 400V
V
G E
= 15V
V
C E
= 400V
I
C
= 75A
3
2
T
J
= 25
º
C
1
2
I
C
= 50A
1
0
20
30
40
50
60
70
80
90
1
00
0
25
50
75
1
00
I
C
= 25A
1
25
I
C
- Amperes
T
J
- Degrees Centigrade
Fig. 11. Gate Charge
1
5
V
C E
= 300V
I
C
= 50A
I
G
= 10mA
10,000
1
0000
Fig. 12. Capacitance
f = 1M Hz
Fig. 12. Capacitance
Capacitance - pF
Capacitance - PicoFarads
1
2
Cies
C ies
1,000
1
000
Coes
C oes
V
G E
- Volts
9
6
100
1
00
Cres
f = 1 MHz
3
C res
0
0
20
40
60
80
1
00
1
20
1
40
1
60
1
0
10
0
0
5
5
10
1
0
15
1
5
Q
G
- nanoCoulombs
20
25
20
25
Volts
V
V
CE
-
-
Volts
CE
30
30
35
35
40
40
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_60N60C2(7Y)12-11-08-A
IXGN60N60C2
IXGN60N60C2D1
160
A
140
I
F
120
100
80
60
40
20
0
0
1
V
F
2
V
0
100
A/μs 1000
-di
F
/dt
0
0
200
400
600 A/μs 1000
800
-di
F
/dt
1000
20
Q
r
T
VJ
= 150°C
100°C
25°C
4000
nC
3000
I
RM
2000
I
F
= 120A, 60A, 30A
T
VJ
= 100°C
V
R
= 300V
80
A
60
T
VJ
= 100°C
V
R
= 300V
I
F
= 120A, 60A, 30A
40
Fig. 13. Forward Current I
F
Versus V
F
2.0
Fig. 14. Reverse Recorvery Charge Q
r
Versus -di
F
/dt
140
ns
130
T
VJ
= 100°C
V
R
= 300V
Fig. 15. Peak Reverse Current I
RM
Versus -di
F
/dt
20
V
V
FR
15
T
VJ
= 100°C
I
F
= 60A
t
rr
V
FR
1.6
μs
1.2
t
fr
1.5
K
f
1.0
t
rr
120
110
100
I
F
= 30A, 60A, 120A
I
RM
10
0.8
0.5
Q
RM
5
90
80
0
0.4
0.0
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/μs
1000
0
200
400
0.0
600 A/μs 1000
800
di
F
/dt
Fig. 16. Dynamic Paraments Q
r,
I
RM
Versus T
vJ
1
1.000
K/W
0.1
Z
thJC
Z
(th)JC
[ ºC / W ]
0.100
Fig. 17. Recorvery Time t
rr
Versus
-di
F
/dt
Fig. 18. Peak Forward Voltage V
RM
and t
rr
Versus -di
F
/dt
0.01
0.010
0.001
0.0001
0.00001
0.001
0.0001
DSEP 2x61-06A
0.0001
0.001
0.001
0.01
0.01
0.1
t
s
1
0.1
1
10
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case
[ s ]
Diode)
Pulse Width
(for
Fig. 27. Maximum Transient Thermal Impedance (for diode)
© 2009 IXYS CORPORATION, All Rights Reserved
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