IXYS Digital Power
10 A/4000 V ISOLATED INTEGRATED DRIVER MODULE
IXIDM1401_M
Datasheet
Part Number Options
IXIDM1401_1505_M
– two isolated gate drivers with 10 A gate current, 15 V positive and –5 V negative
gate voltage, molded version.
IXIDM1401_1515_M
– two isolated gate drivers with 10 A gate current, 15 V positive and -15 V negative
gate voltage, molded version.
Abstract
The IXIDM1401_M driver module combines supreme compactness with the highest performance and
reliability. It comprises a dual-channel driver core that targets medium power dual-channel IGBTs for up to
4 kV and applications such as inverters, drives & automation, UPS, renewable energy, transportation, and
medical. Its parallel capability allows for an easy, high power system design. It supports switching up to
250 kHz, short-circuit protection, advanced active clamping, and supply-voltage monitoring.
The IXIDM1401_M driver core is equipped with the IX6610/6611 chipset of application-specific integrated
circuits that covers the main range of functions required to design intelligent gate drivers. IXIDM1401_M is
available in a 50x50x25 mm package.
Figure 1. Top and Bottom Views of IXIDM1401_M
© 2017 IXYS Corp.
Characteristics subject to change without notice
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IXIDM1401_M_DS, Rev. No. 02
IXIDM1401_M
Table of Contents
Part Number Options ..................................................................................................................................................................... 1
Abstract .......................................................................................................................................................................................... 1
Features .......................................................................................................................................................................................... 3
Applications ................................................................................................................................................................................... 3
Description ..................................................................................................................................................................................... 3
Typical Application Circuits .......................................................................................................................................................... 4
Absolute Maximum Ratings .......................................................................................................................................................... 6
Electrical Operating Characteristics ............................................................................................................................................... 7
Pin Configuration ........................................................................................................................................................................... 9
Pin Assignment .............................................................................................................................................................................. 9
Block Diagram ............................................................................................................................................................................. 10
Basic Operation ............................................................................................................................................................................ 10
Interface ................................................................................................................................................................................... 11
Power Block ............................................................................................................................................................................. 12
Gate Driver ............................................................................................................................................................................... 13
Active Clamping Protection ..................................................................................................................................................... 13
Over-Current Protection ........................................................................................................................................................... 13
Secondary Side Under-/Over-voltage Protection ..................................................................................................................... 14
Layout and Use Considerations ................................................................................................................................................... 14
Typical Performance Characteristics ........................................................................................................................................... 15
Ordering Information ................................................................................................................................................................... 17
Package Drawing and Dimensions ............................................................................................................................................... 17
Marking ........................................................................................................................................................................................ 18
© 2017 IXYS Corp.
Characteristics subject to change without notice
2
IXIDM1401_M_DS, Rev. No. 02
IXIDM1401_M
10 A/4000 V Isolated Integrated Driver Module
Features
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Two isolated gate drivers for half bridge
switching modules
Internal power supply for isolated drivers with up
to 2 W output power per channel
Non-overlap operation of high side and low side
drivers
TTL logic level microcontroller interface
Single 15 V power supply operation
+15 V/-5 V isolated gate driver output voltage to
drive IGBTs with up to 10 A pulse current
Minimum input pulse width 500 ns
Input to output gate driver signal propagation
delay 100 ns
Gate drive pulse width distortion 20 ns
Under- and over-voltage lockout protection
Up to 50 mA 3.3 V load capability output to drive
an external MCU
FAULT signals Informing MCU about over-
voltage, under-voltage, and over-current
conditions at isolated gate drivers
Latched FAULT signals from gate drivers to let
MCU read fault information asynchronously
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Operating ambient temperature: –40 C½+105 C
Driver and internal power supply over-
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temperature protection with 150 C threshold and
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25 C hysteresis
Environmentally friendly: EU RoHS compliant,
Pb-free
Description
A High Voltage Isolated Module (IXIDM1401_M) is
developed and optimized for electronic motor control
applications such as air conditioners, washing
machines, refrigerators, and high power buck
converters or inverters. It is a compact, high
performance device in a single isolated package with
a very simple design.
Based on the IX6610/11 chip set, this device enables
a 3.3 V microcontroller unit (MCU) to operate half-
bridge-connected IGBTs through a 4 kV isolation
barrier providing PWM pulses as short as 500 ns, and
no lower limit on switching frequency.
Internal power supply provides up to 2 W per channel
of isolated power to drive upper and lower IGBTs,
effectively isolating the MCU from high power
circuitry. Operating from a single polarity 15 V power
source, this device provides +15 V/-5 V to operate
IGBT gates and +3.3 V at 50 mA to power the MCU
from the same source.
Built-in under-voltage and over-voltage protection
prevents the IGBT from operating at gate voltages
outside the optimal window and informs the MCU
about such conditions irrespective of the source of
the problem, which may be on either the low or high
side IGBT behind the isolation barrier or on the
primary side before the isolation barrier.
Over-current protection with 300 mV threshold may
utilize either the current sense resistor or IGBT de-
saturation event. Over-current protection turns the
IGBT off immediately after the collector current
exceeds the value set by the customer, informing the
MCU about every such event to make appropriate
decisions.
An active clamping comparator with a 3 V threshold
with respect to negative IGBTs’ gate voltage source
disables the driver in case the collector voltage
exceeds the level set by the customer, preventing
from excessive power dissipation on IGBTs.
Built-in dead time delay circuitry prevents turning on
of both IGBTs simultaneously with channel A priority.
If channel B is active and channel A is forced into the
ON state, channel B becomes disabled immediately
and the channel A IGBT turns on with a delay time of
~0.4 µs. After channel A becomes inactive, channel
B, if active, turns on with the same delay time. If
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Applications
AC and DC motor drives for EV and industrial
Inverters for solar and wind power
Converters for medical, lighting, and transport
UPS, SMPD, and industrial battery chargers
Paralleled operation of IGBTs
Induction heating and traction
Designed for phase-leg IGBT modules
Designed for phase-leg SiC MOSFET modules
Up to 600 A/600 V
Up to 600 A/900 V
Up to 600 A/1200 V
Up to 450 A/1700 V
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© 2017 IXYS Corp.
Characteristics subject to change without notice
IXIDM1401_M_DS, Rev. No. 02
IXIDM1401_M
channel A is active and channel B is forced into the
ON state, this command will be ignored as long as
channel A remains active. If channel A becomes
inactive before the command activating channel B
expires, channel B becomes active with a delay time
of ~400 ns after channel A becomes inactive.
Over-temperature protection disables IGBTs if the
temperature of any of the internal chips exceeds
150°C and resumes normal operations when the
temperature falls below 125°C.
If IGBT assembly is equipped with a temperature
sensor, IXIDM1401_M is able to translate its signal to
the MCU for monitoring.
The IXIDM1401_M device is available in a
50x50x27 mm package with a 12-pin 1 mm pitch FFC
connector to communicate with the MCU, two 5-pin
2.54 mm pitch headers to provide signals to/from
IGBTs and one 2-pin 2.54 mm pitch header to
translate the signal from the IGBT’s assembly
temperature sensor.
Typical Application Circuits
Figure 2. Typical Application Circuit with Half-bridge IGBT Module and De-saturation Over-current
Protection
Figure 2 shows a standard connection for IXIDM1401_M with an MCU and a phase-leg IGBT module. 10 primary-
side pins (out of a total of 12 pins) are directly connected with the MCU. The secondary side has 5 pins for each
IGBT connection.
© 2017 IXYS Corp.
Characteristics subject to change without notice
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IXIDM1401_M_DS, Rev. No. 02
IXIDM1401_M
Figure 3. Typical Application Circuit with Half-bridge IGBT Module and Over-current Protection Utilizing
Current Sense Resistors
Figure 3 shows a standard connection for IXIDM1401_M with an MCU and a phase-leg IGBT module. 10 primary-
side pins (out of a total of 12 pins) are directly connected with the MCU. The secondary side has 5 pins for each
IGBT connection.
Figure 4. Typical Application Circuit with Push-pull Converter and Active Clamping Protection
© 2017 IXYS Corp.
Characteristics subject to change without notice
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IXIDM1401_M_DS, Rev. No. 02
