IXKN 75N60C
CoolMOS
™ 1)
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
D
V
DSS
600 V
I
D25
75 A
R
DS(on)
36 mΩ
Ω
S
miniBLOC, SOT-227 B
G
G
S
S
S
D
G = Gate
D = Drain
S = Source
Either source terminal at miniBLOC can be used
as main or kelvin source
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
dv/dt
E
AS
E
AR
T
C
= 25°C
T
C
= 90°C
V
DS
< V
DSS
; I
F
≤
100A;⎮di
F
/dt⎮≤ 100A/µs
T
VJ
= 150°C
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 µH; T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±20
75
50
6
1.8
1
V
V
A
A
V/ns
J
mJ
Features
• miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
• fast CoolMOS
™ 1)
power MOSFET
3
rd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
30
2.1
100
36 mΩ
3.9
V
Applications
•
•
•
•
•
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
1)
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 5 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 100 A
50 µA
µA
200 nA
CoolMOS
™
is a trademark of
Infineon Technologies AG.
500
50
240
20
30
110
10
0.9
1.1
nC
nC
nC
ns
ns
ns
ns
V
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 100 A; R
G
= 1
Ω
(reverse conduction) I
F
= 37.5 A; V
GS
= 0 V
0.22 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20080523a
© 2008 IXYS All rights reserved
1-4
IXKN 75N60C
Component
Symbol
V
ISOL
T
VJ
T
stg
M
d
mounting torque
terminal connection torque (M4)
Conditions
with heatsink compound
Conditions
I
ISOL
≤
1 mA; 50/60 Hz
Maximum Ratings
2500
-40...+150
-40...+125
1.5
1.5
V~
°C
°C
Nm
Nm
Symbol
R
thCH
Weight
Characteristic Values
min.
typ. max.
0.1
30
K/W
g
miniBLOC, SOT-227 B
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
M4 screws (4x) supplied
20080523a
© 2008 IXYS All rights reserved
2-4
IXKN 75N60C
100
90
80
70
240
t
p = 300µs
V
GS
= 10V
6V
5V
210
180
I
D
- Amperes
I
D
- Amperes
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4V
4.5V
150
120
90
60
30
0
T
J
= 125ºC
25ºC
-40ºC
V
D S
- Volts
Fig. 1 Typical output characteristics I
D
= f (V
DS
)
4
3.7
3.4
V
GS
= 10V
2.8
2
2.5
3
3.5
4
4.5
5
5.5
6
V
G S
- Volts
Fig. 2 Typical transfer characteristics I
D
= f (V
GS
)
V
GS
= 10V
t
p = 300µs
T
J
= 125ºC
2.5
t
p = 300µs
R
D S (on)
- Normalized
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0
40
80
R
D S (on)
- Normalized
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 60A
I
D
= 30A
T
J
= 25ºC
120 160 200 240
280 320 360
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
Fig. 3 Typical normalized R
DS(on)
= f (I
D
)
T
J
- Degrees Centigrade
Fig. 4 Typical normalized R
DS(on)
= f (T
J
)
80
70
A
60
I
D
50
40
30
20
10
0
0
20
40
60
80
100 120 140
°C
160
T
C
Fig. 6 Typical normalized V
DSS
= f (T
J
), V
GS(th)
= f (T
J
)
20080523a
Fig. 5 Continuous drain current I
D
= f (T
C
)
© 2008 IXYS All rights reserved
3-4
IXKN 75N60C
10
9
8
7
V
DS
= 350V
I
D
= 80A
I
G
= 10mA
360
320
280
t
p = 300µs
V
GS
= 10V
7V
V
G S
- Volts
6
5
4
3
2
1
0
0
60
120 180
240 300 360 420
480 540
I
D
- Amperes
240
200
160
120
80
40
0
0
2
4
6
8
10
12
6V
5V
14
16
18
Q
G
- nanoCoulombs
Fig. 7 Typical turn-on gate charge characteristics
100000
f = 1MHz
C
iss
200
180
160
V
D S
- Volts
Fig. 8 Forward Safe Operating Area, I
D
= f (V
DS
)
Capacitance - pF
10000
I
S
- Amperes
140
120
100
80
60
T
J
= 125ºC
T
J
= 25ºC
1000
C
oss
100
C
rss
10
0
10
20
30
40
50
60
70
80
90 100
40
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
DS
- Volts
Fig. 9 Typical capacitances C = f (V
DS
), f = 1 MHz
180
160
140
T
J
= -40ºC
25ºC
125ºC
V
S D
- Volts
Fig. 10 Typ. forward characteristics of reverse diode, I
S
= f (V
SD
)
1
K/W
g
f s
- Siemens
120
100
80
60
40
20
0
0
0.1
Z
thJK
0.01
30
60
90
120
150
180
210
240
I
D
- Amperes
Fig. 11 Typical transconductance g
fs
= f (I
D
)
© 2008 IXYS All rights reserved
0.001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 12 Transient thermal resistance Z
thJK
= f (t
p
)
20080523a
4-4
