Advance Technical Information
HiPerFAST
TM
IGBT
Short Circuit SOA Capability
V
CES
IXSH24N60
IXSH24N60A
600V
600V
I
C90
24A
24A
V
CE(sat)
2.2V
2.7V
TO-247 (IXSH)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
J
= 125°C, R
G
= 10Ω
Clamped inductive load
V
GE
= 15V, V
CE
= 360V, T
J
= 125°C
R
G
= 82Ω, non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
48
24
96
I
CM
= 48
@0.8
•
V
CES
10
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
V
μs
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
G
C
TAB
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
International standard package
JEDEC TO-247AD
High frequency IGBT with guaranteed
Short Circuit SOA Capability
2nd generation HDMOS
TM
process
Low V
CE(SAT)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
1.13 / 10
300
260
6
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
s
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
CE
= V
GE
= 1.5mA, V
CE
= V
GE
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
4.0
7.0
200
1
±100
IXSH24N60
IXSH24N60A
2.2
2.7
V
V
μA
mA
nA
V
V
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Switching speed for high frequency
applications
High power density
V
CE
= 0.8
•
V
CES
V
GE
= 0V
V
CE
= 0V, V
GE
=
±20V
I
C
= 24A, V
GE
= 15V, Note 1
© 2008 IXYS CORPORATION, All rights reserved
DS92809I(07/08)
IXSH24N60
IXSH24N60A
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
I
C(ON)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive load, T
J
= 25°C
°
I
C
= 24A, V
GE
= 15V
V
CE
= 480V, R
G
= 10Ω
I
C
= 24A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 24A, V
CE
= 10V, Note 1
V
GE
= 15V, V
CE
= 10V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
9
23
65
1800
160
45
75
20
35
100
200
IXSH24N60
IXSH24N60A
IXSH24N60A
450
500
275
2.0
100
200
1.2
475
IXSH24N60
IXSH24N60A
IXSH24N60
IXSH24N60A
600
450
4.0
3.0
0.21
90
30
50
S
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83
°C/W
°C/W
e
1
2
3
TO-247 (IXSH) Outline
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Inductive load, T
J
= 125°C
°
I
C
= 24A, V
GE
= 15V
V
CE
= 480V, R
G
= 10Ω
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes: 1. Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
