HIGH Speed IGBT
with HiPerFRED
Short Circuit SOA Capability
Buck & boost configurations
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
IGBT
IXSN 50N60BD2
IXSN 50N60BD3
V
CES
= 600
V
I
C25
= 75 A
V
CEsat)
= 2.5 V
t
fi
= 150 ns
...BD2
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
...BD3
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
= 100
@ 0.8 V
CES
10
250
600
60
600
150
-40 ... +150
150
-40 ... +150
V
V
V
V
A
A
A
A
ms
W
V
A
A
W
°C
°C
°C
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching
IGBT & FRED diode
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Buck converters
IXSN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
IXSN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
3
4
SOT-227B, miniBLOC
E 153432
2
1
I
C25
I
C90
I
CM
SSOA
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
W
(RBSOA)
Clamped inductive load, L = 30
mH
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
V
RRM
Diode
T
C
= 25°C
T
C
= 70°C; rectangular, d = 50%
t
P
z<10 ms; pulse width limited by T
J
T
C
= 25°C
I
FAVM
I
FRM
P
D
T
J
T
JM
Case
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
300
g
°C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25°C
T
J
= 125°C
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
8
350
5
±100
2.2
2.5
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
98675 (4/18/2000)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-5
IXSN 50N60BD2
IXSN 50N60BD3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
16
27
3850
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
440
50
167
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
45
88
70
70
150
150
3.3
70
70
2.5
230
230
4.8
300
300
6.0
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.50 K/W
0.05
K/W
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
miniBLOC, SOT-227 B
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle
£
2 %
M4 screws (4x) supplied
Reverse Diode (FRED)
Symbol
I
R
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
typ.
max.
650
2.5
1.75
2.40
8.0
35
uA
mA
V
V
A
ns
0.85 K/W
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C
I
F
= 60 A
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/ms
V
R
= 540 V, T
J
= 100°C
I
F
= 1 A, -di/dt = 50 A/ms, V
R
= 30 V
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-5
IXSN 50N60BD2
IXSN 50N60BD3
100
T
J
= 25°C
V
GE
= 15V
13V
160
T
J
= 25°C
V
GE
= 15V
80
120
I
C
- Amperes
I
C
- Amperes
60
40
20
9V
11V
13V
80
11V
40
9V
0
0
2
4
6
8
7V
0
10
0
4
8
12
16
20
V
CE
- Volts
V
CE
- Volts
Figure 1. Saturation Voltage Characteristics
100
T
J
= 125°C
Figure 2. Extended Output Characteristics
1.6
V
GE
= 15V
13V
I
C
= 100A
V
CE (sat)
- Normalized
80
1.4
V
GE
= 15V
I
C
- Amperes
1.2
1.0
0.8
I
C
= 25A
60
11V
40
20
0
0
2
4
6
8
10
9V
7V
I
C
= 50A
0.6
0.4
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees C
Figure 3. Saturation Voltage Characteristics
100
V
CE
= 10V
Figure 4. Temperature Dependence of V
CE(sat)
10000
f = 1Mhz
C
iss
80
Capacitance - pF
I
C
- Amperes
1000
60
40
T
J
= 125°C
100
C
oss
20
T
J
= 25°C
C
rss
0
4
6
8
10
V
GE
- Volts
10
12
14
16
0
5
10
15
20
25
30
35
40
V
CE
-Volts
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
© 2000 IXYS All rights reserved
3-5
IXSN 50N60BD2
IXSN 50N60BD3
3.0
T
J
= 125°C
E
(ON)
24
4
T
J
= 125°C
E
(OFF)
20
E
(ON)
- millijoules
E
(ON)
- millijoules
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
E
(OFF)
Figure 7. Dependence of E
ON
and E
OFF
on I
C
.
20
I
C
=50A
16
12
8
4
0
0
V
CE
= 250V
I
C
- Amperes
dV/dt < 5V/ns
1
0.1
25
50
75
100
125
150
175
0
100
200
300
400
500
600
Q
g
- nanocoulombs
V
CE
- Volts
Figure 9. Gate Charge
1
Figure 10. Turn-off Safe Operating Area
Z
thJC
(K/W)
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
I
C
- Amperes
2.5
R
G
= 10
20
E
(OFF)
- milliJoules
3
E
(ON)
16
12
8
4
0
100
I
C
= 100A
15
E
(OFF)
- millijoules
2
E
(ON)
E
(ON)
I
C
= 50A
E
(OFF)
10
1
E
(OFF)
I
C
=25A
5
0
0
10
20
30
40
50
0
60
R
G
- Ohms
Figure 8. Dependence of E
ON
and E
OFF
on R
G
.
600
100
10
T
J
= 125°C
R
G
= 6.2
1
4-5
IXSN 50N60BD2
IXSN 50N60BD3
60
A
50
I
F
40
1000
30
A
25
I
RM
20
15
T
VJ
= 100°C
nC
V
R
= 300V
I
F
= 60A
I
F
= 30A
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
800
T
VJ
=150°C
30
600
T
VJ
=100°C
20
400
10
T
VJ
=25°C
10
0
0
1
2
V
F
3 V
200
5
0
0
200
400
0
100
A/
m
s 1000
-di
F
/dt
600 A/
m
s 1000
800
-di
F
/dt
Fig. 12 Forward current I
F
versus V
F
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
20
V
V
FR
15
1.00
2.0
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 30A
V
FR
t
fr
µs
t
fr
0.75
1.5
K
f
1.0
t
rr
80
I
RM
70
0.5
I
F
= 60A
I
F
= 30A
I
F
= 15A
10
0.50
5
0.25
Q
r
0.0
0
40
80
120 °C 160
T
VJ
60
0
200
400
600
-di
F
/dt
800
A/
m
s 1000
0
0
200
400
0.00
600 A/
m
s 1000
800
di
F
/dt
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
K/W
i
0.1
Z
thJC
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.0052
0.0003
0.0396
1
2
3
0.01
0.001
0.00001
DSEC 60-06B
0.0001
0.001
0.01
0.1
t
s
1
© 2000 IXYS All rights reserved
5-5
安防电子
