Depletion Mode
MOSFET
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
D
V
DSX
I
D(on)
R
DS(on)
=
>
1000V
800mA
21
N-Channel
TO-252 (IXTY)
G
G
S
S
D (Tab)
TO-263 AA (IXTA)
Symbol
V
DSX
V
GSX
V
GSM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C
Maximum Ratings
1000
20
30
60
- 55 ... +150
150
- 55 ... +150
V
V
V
W
C
C
C
°C
°C
Nm/lb.in.
g
g
g
G
G
S
D (Tab)
TO-220AB (IXTP)
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
300
260
1.13 / 10
0.35
2.50
3.00
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
V
- 4.0
V
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= - 5V, I
D
= 25A
V
DS
= 25V, I
D
= 25A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= - 5V
V
GS
= 0V, I
D
= 400mA, Note 1
V
GS
= 0V, V
DS
= 50V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
- 2.0
50
nA
1
A
15
A
21
800
mA
© 2017 IXYS CORPORATION, All Rights Reserved
DS100182C(9/17)
IXTY08N100D2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
V
GS
= 5V, V
DS
= 500V, I
D
= 400mA
Resistive Switching Times
V
GS
=
5V,
V
DS
= 500V, I
D
= 400mA
R
G
= 10 (External)
V
GS
= -10V, V
DS
= 25V, f = 1MHz
V
DS
= 30V, I
D
= 400mA, Note 1
Characteristic Values
Min.
Typ.
Max.
330
560
325
24
6.5
28
57
34
48
14.6
1.2
8.3
0.50
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
2.08
C/W
C/W
IXTA08N100D2
IXTP08N100D2
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
V
DS
= 800V, I
D
= 45mA, T
C
= 75C, Tp = 5s
Characteristic Values
Min.
Typ.
Max.
36
W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
SD
t
rr
I
RM
Q
RM
I
F
= 800mA, V
GS
= -10V, Note 1
I
F
= 800mA, -di/dt = 100A/s
V
R
= 100V, V
GS
= -10V
Characteristic Values
Min.
Typ.
Max.
0.8
1.03
7.40
3.80
1.3
V
μs
A
μC
Note 1. Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
0.8
0.7
0.6
Fig. 1. Output Characteristics @ T
J
= 25 C
V
GS
= 5V
2V
1V
o
2.2
2.0
1.8
1.6
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 5V
2V
1V
o
I
D
- Amperes
I
D
- Amperes
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
0V
1.4
1.2
1.0
0.8
0.6
- 1V
0V
- 1V
- 2V
0.4
0.2
0.0
10
12
14
0
10
20
30
40
50
60
70
80
- 2V
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
0.8
0.7
0.6
V
GS
= 5V
1V
0V
1E-03
1E-01
Fig. 4. Drain Current @ T
J
= 25 C
V
GS
= - 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
o
1E-02
I
D
- Amperes
I
D
- Amperes
0.5
0.4
0.3
0.2
0.1
- 1V
1E-04
1E-05
1E-06
- 4.25V
- 2V
1E-07
- 3V
0.0
0
5
10
15
20
25
30
1E-08
- 4.50V
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
V
DS
- Volts
V
DS
- Volts
o
Fig. 5. Drain Current @ T
J
= 100 C
1.E-01
1.E+11
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆
V
DS
= 700V - 100V
1.E-02
V
GS
= - 3.25V
- 3.50V
1.E+10
1.E+09
I
D
- Amperes
1.E-03
- 3.75V
- 4.00V
R
O
- Ohms
1.E+08
1.E-04
T
J
= 25 C
1.E+07
o
- 4.25V
1.E-05
1.E+06
T
J
= 100 C
o
- 4.50V
1.E-06
1.E+05
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
V
DS
- Volts
V
GS
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
2.6
V
GS
= 0V
2.2
I
D
= 0.4A
2.6
2.4
2.2
Fig. 8. R
DS(on)
Normalized to I
D
= 0.4A Value
vs. Drain Current
V
GS
= 0V
5V
R
DS(on)
- Normalized
R
DS(on)
- Normalized
1.8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T
J
= 25 C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
o
T
J
= 125 C
o
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
0.6
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Input Admittance
1.4
V
DS
= 30V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
T
J
= 125 C
25 C
o
- 40 C
o
o
Fig. 10. Transconductance
1.2
V
DS
= 30V
1.0
T
J
= - 40 C
o
g
f s
- Siemens
0.8
I
D
- Amperes
25 C
125 C
o
o
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
- Volts
I
D
- Amperes
1.3
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
2.8
2.4
V
GS
= -10V
1.2
BV / V
GS(off)
- Normalized
V
GS(off)
@ V
DS
= 25V
2.0
1.1
BV
DSX
@ V
GS
= - 5V
1.0
I
S
- Amperes
1.6
1.2
0.8
T
J
= 125 C
o
T
J
= 25 C
o
0.9
0.4
0.0
-50
-25
0
25
50
75
100
125
150
0.4
0.5
0.6
0.7
0.8
0.9
0.8
T
J
- Degrees Centigrade
V
SD
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 13. Capacitance
1,000
5
4
V
DS
= 500V
I
D
= 400mA
I
G
= 1mA
Fig. 14. Gate Charge
Capacitance - PicoFarads
Ciss
100
3
2
Coss
V
GS
- Volts
1
0
-1
-2
10
Crss
-3
-4
-5
f
= 1 MHz
1
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
V
DS
- Volts
Q
G
- NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
@ T
C
= 25 C
10.00
10.00
o
Fig. 16. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
R
DS(on)
Limit
1.00
25μs
1.00
R
DS(on)
Limit
100μs
25μs
100μs
I
D
- Amperes
1ms
0.10
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.01
10
100
1,000
o
o
I
D
- Amperes
10ms
100ms
DC
1ms
0.10
10ms
T
J
= 150 C
T
C
= 75 C
Single Pulse
0.01
10
100
1,000
o
o
100ms
DC
V
DS
- Volts
V
DS
- Volts
Fig. 17. Maximum Transient Thermal Impedance
10
Z
(th)JC
- K / W
1
0.1
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_08N100D2(1C)8-25-09
