TrenchP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTT76P10THV
IXTA76P10T
IXTP76P10T
IXTH76P10T
D
V
DSS
I
D25
R
DS(on)
TO-268HV
(IXTT)
=
=
- 100V
- 76A
25m
G
S
D (Tab)
G
S
TO-263 AA
(IXTA)
G
S
D (Tab)
V
V
V
V
A
A
A
J
W
C
C
C
°C
°C
TO-247
(IXTH)
G
DS
D (Tab)
TO-220AB
(IXTP)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
- 100
- 100
15
25
- 76
- 230
- 38
1
298
-55 ... +150
150
-55 ... +150
G
D
S
D (Tab)
G = Gate
S = Source
Features
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-268HV
TO-247
300
260
1.13 /10
2.5
3.0
4.0
6.0
Nm/lb.in.
g
g
g
g
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250A
V
DS
= V
GS
, I
D
= - 250A
V
GS
=
15V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min. Typ. Max.
-100
- 2.0
- 4.0
V
V
Easy to Mount
Space Savings
Applications
100
nA
- 15
A
- 750
A
25 m
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS100024C(9/15)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-247
0.50
0.21
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
35
58
13.7
890
275
25
40
52
20
197
65
65
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 38A, V
GS
= 0V, Note 1
I
F
= - 38A, -di/dt = -100A/s
V
R
= - 50V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
- 76
- 304
-1.3
70
215
-6
A
A
V
ns
nC
A
Note
1:
Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 1. Output Characteristics @ T
J
= 25 C
-80
-70
-60
V
GS
= -10V
- 9V
- 8V
- 7V
-280
V
GS
= -10V
-240
-200
- 9V
- 8V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
D
- Amperes
I
D
- Amperes
-50
-40
-30
-20
-10
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
- 5V
- 6V
-160
-120
-80
-40
0
0
-5
-10
-15
- 7V
- 6V
- 5V
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
-80
-70
-60
V
GS
= -10V
- 9V
- 8V
- 7V
o
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Fig. 4. R
DS(on)
Normalized to I
D
= - 38A Value vs.
Junction Temperature
V
GS
= -10V
R
DS(on)
- Normalized
I
D
- Amperes
-50
-40
-30
- 6V
I
D
= - 76A
I
D
= - 38A
- 5V
-20
-10
0
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
-2.8
-3.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= - 38A Value vs.
Drain Current
2.2
V
GS
= -10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
-40
-80
-120
-160
-200
-240
o
Fig. 6. Maximum Drain Current vs. Case Temperature
-90
-80
T
J
= 125 C
-70
o
R
DS(on)
- Normalized
-60
I
D
- Amperes
T
J
= 25 C
-50
-40
-30
-20
-10
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 7. Input Admittance
-140
-120
-100
V
DS
= -10V
80
25 C
o
100
V
DS
= -10V
Fig. 8. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
T
J
= 125 C
o
I
D
- Amperes
-80
-60
-40
25 C
o
- 40 C
o
60
125 C
o
40
20
-20
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
0
-20
-40
-60
-80
-100
-120
-140
-160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-240
-10
-9
-200
-8
-7
V
DS
= - 50V
I
D
= - 38A
I
G
= -1mA
Fig. 10. Gate Charge
-160
I
S
- Amperes
-120
T
J
= 125 C
T
J
= 25 C
-40
o
o
V
GS
- Volts
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
-6
-5
-4
-3
-2
-1
-80
0
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
0
0
20
40
60
80
100
120
140
160
180
200
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
- 1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Capacitance - PicoFarads
1ms
R
DS(on)
Limit
10,000
10ms
100ms
- 100
100µs
25µs
I
D
- Amperes
Ciss
DC
- 10
T
J
= 150 C
T
C
= 25 C
Single Pulse
-
1
o
o
1,000
C oss
C rss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
-1
-10
-100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
44
44
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
40
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
40
T
J
= 25 C
R
G
= 1Ω, V
GS
= -10V
32
V
DS
= - 50V
o
t
r
- Nanoseconds
36
t
r
- Nanoseconds
36
32
I
D
= - 38A
28
I
D
= - 76A
24
28
T
J
= 125 C
o
24
20
25
35
45
55
65
75
85
95
105
115
125
20
-36
-40
-44
-48
-52
-56
-60
-64
-68
-72
-76
T
J
- Degrees Centigrade
I
D
- Amperes
200
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
o
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
110
24
23
75
t
d(on)
I
D
= - 76A, - 38A
90
t
f
t
d(off)
70
65
160
T
J
= 125 C, V
GS
= -10V
V
DS
= - 50V
R
G
= 1Ω, V
GS
= -10V
22
V
DS
= - 50V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
120
70
21
20
19
18
17
I
D
= - 76A
I
D
= - 38A
60
55
50
45
40
35
125
80
50
40
30
0
0
2
4
6
8
10
12
14
16
18
20
10
16
25
35
45
55
65
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
24
23
22
66
200
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
300
62
160
58
t
f
t
d(off)
t
f
o
t
d(off)
240
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 125 C, V
GS
= -10V
V
DS
= - 50V
I
D
= - 38A, - 76A
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
21
20
19
T
J
= 125 C, 25 C
18
17
16
-36
-40
-44
-48
-52
-56
-60
-64
-68
-72
-76
o
o
54
50
46
42
38
34
t
f
- Nanoseconds
t
d(off)
- Nanoseconds
120
180
80
120
40
60
0
0
2
4
6
8
10
12
14
16
18
20
0
I
D
- Amperes
R
G
- Ohms
© 2017 IXYS CORPORATION, All Rights Reserved
