Preliminary Technical Information
TrenchMV
TM
Power
MOSFET
(
Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
50/60Hz, t = 1 minute, I
ISOL
< 1mA, RMS
Mounting Force
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
IXTF200N10T
V
DSS
I
D25
R
DS(on)
= 100V
= 90A
≤
7mΩ
Ω
ISOPLUS i4-Pak
TM
(5-lead)
Maximum Ratings
100
100
±
30
90
500
40
1.5
156
-55 ... +175
175
-55 ... +175
300
260
2500
120..120 / 4.5..27
6
V
V
V
A
A
A
J
W
°C
°C
°C
°C
°C
V
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Avalanche Rated
2500V Electrical Isolation
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary - Side Switch
High Current Switching Applications
G = Gate
S = Source
D = Drain
G
S
S
D
D
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V,
I
D
= 50A,
Notes 1
Characteristic Values
Min. Typ.
Max.
100
2.5
4.5
±200
5
250
7
V
V
nA
μA
μA
mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
DS99747B(03/09)
IXTF200N10T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 50A, V
GS
= 0V, Note 1
I
F
= 100A, V
GS
= 0V,-di/dt = 100A/μs
V
R
= 50V
76
205
5.4
Characteristic Values
Min. Typ.
Max.
200
500
1.0
A
A
V
ns
nC
A
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
=
50A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V,
I
D
= 60A,
Note 1
Characteristic Values
Min. Typ.
Max.
60
96
9400
1087
140
35
31
45
34
152
47
47
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.96
°C/W
°C/W
ISOPLUS i4-Pak
TM
(5-Lead)
(IXTF) Outline
Leads:
1. Gate;
2, 3. Source;
4, 5. Drain
6. Isolated.
Notes: 1.
Pulse Test, t
≤
300μs; Duty Cycle, d
≤
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
All leads and tab are tin plated.
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
Fig. 1. Output Characteristics
@ 25ºC
200
180
160
140
V
GS
= 10V
9V
8V
350
300
250
Fig. 2. Extended Output Characteristics
@ 25ºC
V
GS
= 10V
9V
8V
I
D
- Amperes
120
7V
100
80
60
40
20
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
6V
I
D
- Amperes
200
150
100
50
7V
6V
5V
0
0
1
5V
2
3
4
5
6
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
V
GS
= 10V
9V
8V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
D
= 100A
I
D
= 200A
I
D
- Amperes
120
100
80
60
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
7V
6V
5V
1.6
1.8
2.0
2.2
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value
vs. Drain Current
3.0
2.8
2.6
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
100
90
80
70
Fig. 6. Drain Current vs. Case Temperature
R
DS(on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
40
80
120
160
200
I
D
- Amperes
T
J
= 25ºC
240
280
320
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_200N10T(6V)9-30-08-D
IXTF200N10T
Fig. 7. Input Admittance
250
225
200
120
160
T
J
= - 40ºC
140
Fig. 8. Transconductance
g
f s
- Siemens
175
25ºC
I
D
- Amperes
150
125
100
75
T
J
= 150ºC
25ºC
- 40ºC
100
80
60
40
150ºC
50
25
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
20
0
0
25
50
75
100
125
150
175
200
225
250
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
270
240
210
10
9
8
7
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 25ºC
180
150
120
90
60
30
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
= 150ºC
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
Fig. 12. Maximum Transient Thermal
Impedance
1.00
f
= 1MHz
Capacitance - PicoFarads
Ciss
Z
(th)JC
- ºC / W
30
35
40
10,000
0.10
Coss
1,000
Crss
100
0
5
10
15
20
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
33
32
31
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
34
33
32
31
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
t
r
- Nanoseconds
t
r
- Nanoseconds
30
29
28
27
26
25
24
23
22
25
35
45
55
65
75
85
95
I
D
30
29
28
27
26
25
24
23
22
T
J
= 125ºC
I
D
= 50A
= 25A
105
115
125
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
220
200
180
85
42
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
75
80
75
t
r
V
DS
= 50V
t
d(on)
- - - -
t
f
40
V
DS
= 50V
t
d(off)
- - - -
70
T
J
= 125ºC, V
GS
= 10V
R
G
= 3.3Ω, V
GS
= 10V
t
d ( o f f )
- Nanoseconds
t
d ( o n )
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
160
140
120
100
80
60
40
20
0
2
70
I
D
= 50A
65
60
I
D
= 25A
55
50
45
40
35
30
38
36
34
32
30
28
25
35
45
55
65
I
D
= 25A
65
60
55
I
D
= 50A
50
45
40
125
4
6
8
10
12
14
16
18
20
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
37
36
80
200
180
160
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
300
t
f
T
J
= 125ºC
V
DS
= 50V
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
75
t
f
V
DS
= 50V
t
d(off)
- - - -
275
250
225
200
T
J
= 125ºC, V
GS
= 10V
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
70
65
t
f
- Nanoseconds
35
34
33
32
31
30
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
t
f
- Nanoseconds
140
120
100
80
60
40
20
0
2
4
6
8
10
12
14
16
18
20
I
D
= 25A
I
D
60
55
50
45
40
175
= 50A
150
125
100
75
50
I
D
- Amperes
R
G
- Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_200N10T(6V)9-30-08-D
