Advance Technical Information
Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 60N25
V
DSS
= 250 V
I
D(cont)
= 60 A
Ω
R
DS(on)
=
46 mΩ
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 MΩ
Continuous
Transient
T
C
= 25°C MOSFET chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum ratings
250
250
±20
±30
60
240
60
50
1.5
5
400
-55 ... +150
150
-55 ... +150
V
V
V
V
D (TAB)
TO-247 AD
A
A
A
mJ
J
V/ns
W
°
C
°
C
°
C
Nm/lb.in.
g
°C
G
D
S
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
Mounting torque
TO-264
1.13/10
6
300
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
International standard package
JEDEC TO-247 AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
•
Fast switching times
•
High commutating dv/dt rating
Applications
Symbol
Test Conditions
Characteristic Values
Min. Typ.
250
2.0
Max.
V
V
nA
µA
µA
(T
J
= 25°C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ±20 V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
•
Motor controls
•
DC choppers
•
Switched-mode
and resonant-mode
power supplies
•
Uninterruptible Power Supplies (UPS)
Advantages
4.0
±100
25
250
•
Easy to mount with one screw
(isolated mounting screw hole)
•
Space savings
•
High power density
V
GS
= 10 V, I
D
= 15A
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
46 mΩ
© 2003 IXYS All rights reserved
DS99010(03/03)
IXTH 60N25
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
0.25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2.0
Ω
(External)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Characteristic values
Min. Typ.
Max.
28
36
4400
800
290
23
23
60
17
164
30
85
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31 K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD Outline
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Conditions
V
GS
= 0V
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min.
Typ.
Max.
60
240
1.5
A
A
V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300 µs, duty cycle d
≤
2 %
I
F
= 25A, -di/dt = 100 A/µs, V
R
= 100V
300
3.0
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTH 60N25
Fig. 1. Output Characteristics
@ 25 Deg. C
60
50
V
GS
= 10V
9V
8V
7V
1
50
1
25
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
I
D
- Amperes
I
D
- Amperes
40
30
20
1
0
1
00
75
50
25
0
6V
5V
7V
6V
5V
0
0
0.5
1
1
.5
2
2.5
3
3.5
V
DS
- Volts
0
2
4
6
8
1
0
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
60
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
3
V
GS
= 10V
I
D
- Amperes
40
30
20
1
0
0
0
1
R
DS(on)
- Normalized
50
V
GS
= 10V
9V
8V
7V
6V
2.5
2
I
D
= 60A
1
.5
I
D
= 30A
1
0.5
5V
2
3
4
5
6
7
-50
-25
0
25
50
75
1
00
1
25
1
50
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
3.4
3
V
GS
= 10V
70
60
50
Fig. 6. Drain Current vs. Case
Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
1
20
1
50
2.6
2.2
1
.8
1
.4
1
0.6
0
30
60
90
T
J
= 125ºC
40
30
20
1
0
0
-50
-25
0
25
50
75
1
00
1
25
1
50
I
D
- Amperes
T
C
- Degrees Centigrade
© 2003 IXYS All rights reserved
IXTH 60N25
Fig. 7. Input Admittance
1
20
1
00
75
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
60
I
D
- Amperes
80
60
40
20
0
4
4.5
5
5.5
6
6.5
7
7.5
8
G
fs
- Siemens
45
T
J
= -40ºC
25ºC
125ºC
30
1
5
0
0
30
60
90
1
20
1
50
1
80
V
GS
- Volts
I
D
- Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
1
80
1
50
1
0
Fig. 10. Gate Charge
8
V
DS
= 125V
I
D
=30A
I
G
= 10mA
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
1
20
90
60
30
0
0.4
0.6
0.8
1
1
.2
1
.4
6
4
2
0
0
30
60
90
1
20
1
50
1
80
V
SD
- Volts
Q
G
- nanoCoulombs
Fig. 11. Capacitance
1
0000
f = 1M Hz
1
Fig. 12. Maximum Transient Thermal
Resistance
Capacitance - pF
R
(th)JC
- (ºC/W)
20
25
30
35
40
C
iss
1
000
C
oss
0.1
C
rss
1
00
0
5
1
0
1
5
0.01
V
DS
- Volts
1
Pulse Width - milliseconds
1
0
1
00
1
000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
嵌入式系统
