Preliminary Technical Information
Linear Power MOSFET
IXTK46N50L
With Extended FBSOA
IXTX46N50L
N-Channel Enhancement Mode
V
DSS
I
D25
R
DS(on)
= 500
= 46
≤
0.16
V
A
Ω
TO-264 (IXTK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
c
Weight
1.6 mm (0.063 in) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
PLUS247
TO-264
(TO-264)
(PLUS247
TM
)
T
C
= 25°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
46
100
46
60
1.5
700
-55 to +150
150
-55 to +150
300
260
V
V
V
V
A
A
A
mJ
J
W
°C
°C
°C
°C
°C
Features
Designed for linear operation
International standard package
Unclamped Inductive switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
500
3
6
±200
T
J
= 25°C
T
J
= 125°C
50
1
0.16
V
V
nA
μA
mA
Ω
Applications
Programmable loads
Current regulators
DC-DC converters
Battery chargers
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2007 IXYS CORPORATION, All rights reserved
DS99350A(03/07)
G = Gate
S = Source
D = Drain
TAB = Drain
TAB
G
D
S
(TAB)
PLUS247 (IXTX)
1.13/10 Nm/lb.in.
20...120/4.5...27
N/lb.
6
10
g
g
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
μA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 20 V, I
D
= 0.5 I
D25
, Note 1
IXTK46N50L
IXTX46N50L
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
7
10
7000
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
900
170
40
V
GS
= 15 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
Ω
(External),
50
80
42
260
V
GS
= 15 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
85
125
13
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18
°C/W
0.15
°C/W
TO-264 (IXTK) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 10 V; I
D
= 0.5 • I
D25
, Note 1
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V
DS
= 400 V, I
D
= 0.6 A, T
C
= 90°C
Min.
240
Typ.
Max.
W
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
46
100
1.5
600
A
A
V
ns
PLUS247
TM
(IXTX) Outline
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
I
F
= I
S
, -di/dt = 100 A/μs, V
R
= 100V
Note 1: Pulse test, t < 300
μs,
duty cycle, d
≤
2 %
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTK46N50L
IXTX46N50L
Fig. 1. Output Characteristics
@ 25ºC
50
45
40
35
V
GS
= 20V
18V
16V
100
90
1
4V
80
70
14V
60
50
40
12V
30
20
9V
8V
7V
0
1
2
3
4
5
6
7
8
9
10
0
0
3
6
9
12
15
18
21
10V
9V
8V
24
27
30
V
GS
= 20V
18V
16V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
30
25
20
15
10
5
0
1
0V
I
D
- Amperes
1
2V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125ºC
50
45
40
V
GS
= 20V
18V
16V
3.1
2.8
V
GS
= 20V
V
D S
- Volts
Fig. 4. R
DS(on)
Norm alized to 0.5 I
D25
Value
vs. Junction Tem perature
14V
R
D S (on)
- Normalized
1
2V
2.5
2.2
1.9
1.6
1.3
1.0
0.7
0.4
I
D
= 46A
I
D
- Amperes
35
30
25
20
15
9V
10
5
0
0
2
4
6
8
10
12
14
8V
7V
16
18
10V
I
D
= 23A
-50
-25
0
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
3.0
2.8
2.6
V
GS
= 20V
T
J
= 125ºC
50
45
40
35
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
R
D S (on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
20
40
60
80
100
120
T
J
= 25ºC
I
D
- Amperes
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXTK46N50L
IXTX46N50L
Fig. 7. Input Adm ittance
70
60
50
20
18
16
Fig. 8. Trans conductance
I
D
- Amperes
14
g
f s
- Siemens
40
30
20
10
0
5
6
7
8
9
1
0
1
1
1
2
1
3
1
4
1
5
T
J
= 125ºC
25ºC
-40ºC
12
10
8
6
4
2
0
0
10
20
30
40
T
J
= -40ºC
25ºC
125ºC
50
60
70
V
G S
- Volts
Fig. 9. Source Current vs .
Source -To-Drain Voltage
70
60
50
16
14
12
V
DS
= 250V
I
D
= 23A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1
T
J
= 125ºC
T
J
= 25ºC
V
G S
- Volts
10
8
6
4
2
0
0
30
60
90
120
150
180
210
240
270
V
S D
- Volts
Fig. 11. Capacitance
10000
C iss
Q
G
- nanoCoulombs
Capacitance - pF
C oss
1000
C rss
f = 1MHz
100
0
5
10
15
20
25
30
35
40
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK46N50L
IXTX46N50L
Fig. 12. Forw ard-Bias Safe
Operating Area @ T
C
= 25ºC
1000
T
J
= 150ºC
R
DS
(on)
Limit
100
25µs
100
R
DS
(on)
Limit
1000
T
J
= 150ºC
Fig. 13. Forw ard-Bias Safe
Operating Area @ T
C
= 90ºC
I
D
- Amperes
I
D
- Amperes
100µs
10
25µs
100µs
10
1ms
10ms
DC
1ms
10ms
1
DC
1
0.1
10
100
1000
0.1
10
100
1000
V
D S
- Volts
V
D S
- Volts
Fig. 14. Maxim um Transient Therm al Im pedance
1.000
Z
(th) J C
- (ºC/W)
0.100
0.010
0.001
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_46N50L (8N) 4-05-07-A.xls
微控制器 MCU
