Advance Technical Information
TrenchP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTY10P15T
IXTA10P15T
IXTP10P15T
V
DSS
I
D25
R
DS(on)
=
=
≤
-150V
-10A
350mΩ
Ω
TO-252 (IXTY)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
-150
-150
+
15
+
25
-10
- 30
-10
200
83
-55 ... +150
150
-55 ... +150
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
V
V
V
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
300
260
1.13 / 10
0.35
2.50
3.00
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
-150
- 2.0
- 4.5
V
V
±50
nA
- 3
μA
-100
μA
350 mΩ
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
DS100290(10/10)
IXTY10P15T IXTA10P15T
IXTP10P15T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5Ω (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
5
9
2210
146
43
19
16
40
12
36
12
8
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
°C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
TO-252 Outline
Pins:
1 - Gate
3 - Source
Millimeter
Min. Max.
2.19
0.89
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
2,4 - Drain
Inches
Min.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64
0.89
2.54
1.02
1.27
2.92
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, -di/dt = -100A/μs
V
R
= - 100V, V
GS
= 0V
1: Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Dim.
A
b
b2
c
c2
D
D1
E
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
H
L
Characteristic Values
Min.
Typ.
Max.
-10
- 40
-1.3
120
530
-9
A
A
V
ns
nC
A
L1
L2
L3
TO-220 Outline
TO-263 Outline
Pins:
1 - Gate
3 - Source
2 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY10P15T IXTA10P15T
IXTP10P15T
Fig. 1. Output Characteristics @ T
J
= 25ºC
-10
-9
-8
-30
-7
- 7V
V
GS
= -10V
- 8V
-40
-35
V
GS
= -10V
- 9V
- 8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
-6
-5
-4
-3
- 6V
I
D
- Amperes
-25
-20
-15
-10
- 6V
- 7V
-2
-1
0
0
-0.5
-1
-1.5
-2
-2.5
-3
- 5V
-5
- 5V
0
0
-5
-10
-15
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-10
-9
-8
V
GS
= -10V
- 8V
- 7V
2.2
2.0
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= - 5A vs.
Junction Temperature
V
GS
= -10V
I
D
- Amperes
-7
- 6V
-6
-5
-4
-3
-2
-1
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
-5.5
- 4V
- 5V
R
DS(on)
- Normalized
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
I
D
= -10A
I
D
= - 5A
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= - 5A vs.
Drain Current
3.0
2.8
2.6
V
GS
= -10V
-10
T
J
= 125ºC
-12
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
-5
-10
I
D
- Amperes
T
J
= 25ºC
-8
-6
-4
-2
0
-15
-20
-25
-30
-35
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXTY10P15T IXTA10P15T
IXTP10P15T
Fig. 7. Input Admittance
-22
-20
-18
-16
T
J
= 125ºC
25ºC
- 40ºC
20
18
16
14
25ºC
125ºC
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
-6.0
-6.5
-7.0
I
D
- Amperes
-14
-12
-10
-8
-6
-4
-2
0
-3.5
-4.0
-4.5
-5.0
12
10
8
6
4
2
0
-5.5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-30
-10
-9
-25
-8
-7
V
DS
= - 75V
I
D
= - 5A
I
G
= -1mA
Fig. 10. Gate Charge
-20
I
S
- Amperes
-15
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
-6
-5
-4
-3
-2
-1
-10
-5
0
-0.3
0
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
0
4
8
12
16
20
24
28
32
36
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
- 100
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Ciss
Capacitance - PicoFarads
R
DS(on)
Limit
1,000
- 10
25µs
100µs
I
D
- Amperes
Coss
100
1ms
10ms
100ms
T
J
= 150ºC
DC
T
C
= 25ºC
Single Pulse
- 0.1
-1
Crss
10
0
-5
-10
-15
-20
-25
-30
-35
-40
-1
- 10
- 100
-1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY10P15T IXTA10P15T
IXTP10P15T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
18
R
G
= 5Ω, V
GS
= -10V
V
DS
= - 75V
17
17
18
R
G
= 5Ω, V
GS
= -10V
V
DS
= - 75V
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
T
J
= 25ºC
16
16
I
D
= -10A
15
I
14
D
15
T
J
= 125ºC
14
= - 5A
13
25
35
45
55
65
75
85
95
105
115
125
13
-5
-5.5
-6
-6.5
-7
-7.5
-8
-8.5
-9
-9.5
-10
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
45
40
35
45
13.5
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
44
40
13.0
35
t
r
V
DS
= - 75V
t
d(on)
- - - -
t
f
V
DS
= - 75V
t
d(off)
- - - -
42
T
J
= 125ºC, V
GS
= -10V
R
G
= 5Ω, V
GS
= -10V
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
30
25
20
15
10
5
0
5
10
15
20
25
I
D
= -10A, - 5A
30
25
20
15
10
12.5
I
D
= - 5A
12.0
I
D
= - 10A
40
38
11.5
36
11.0
5
0
10.5
25
35
45
55
65
75
85
95
105
115
34
32
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
13.6
13.2
12.8
41
50
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
70
40
40
39
38
37
36
35
t
f
V
DS
= - 75V
T
J
= 25ºC
t
d(off)
- - - -
t
f
V
DS
= - 75V
t
d(off)
- - - -
60
R
G
= 5Ω, V
GS
= -10V
T
J
= 125ºC, V
GS
= -10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
12.4
12.0
11.6
11.2
30
I
D
= - 5A, -10A
50
20
40
T
J
= 125ºC
10.8
10.4
-5
-5.5
-6
-6.5
-7
-7.5
-8
-8.5
-9
-9.5
-10
34
33
10
30
0
5
10
15
20
25
20
I
D
- Amperes
R
G
- Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
嵌入式系统
