Preliminary Technical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA200N075T
IXTP200N075T
V
DSS
I
D25
R
DS(on)
= 75
V
= 200
A
≤
5.0 m
Ω
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Transient
T
C
= 25° C
Lead Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
175° C, R
G
= 5
Ω
T
C
= 25° C
Maximum Ratings
75
75
±
20
200
75
540
25
750
3
430
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D
S
(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
300
260
1.13 / 10 Nm/lb.in.
3
2.5
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°
C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
75
2.0
4.0
±
200
5
250
4.2
5.0
V
V
nA
µA
µA
m
Ω
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
DS99521 (11/06)
IXTA200N075T
IXTP200N075T
Symbol
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
Resistive Switching Times
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
R
G
= 5
Ω
(External)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
Test Conditions
V
DS
= 10 V; I
D
= 60 A, Note 1
Characteristic Values
Min.
70
Typ.
115
6800
1040
190
31
57
54
52
160
35
43
Max.
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.35
°C/W
°C/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
TO-263 (IXTA) Outline
(T
J
= 25° C unless otherwise specified)
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Source-Drain Diode
Symbol
Test Conditions
T
J
= 25° C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0 V
Pulse width limited by T
JM
I
F
= 25 A, V
GS
= 0 V, Note 1
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 25 V, V
GS
= 0 V
80
Characteristic Values
Min. Typ.
Max.
200
540
1.0
A
A
V
ns
L
L1
L2
L3
L4
R
TO-220 (IXTP) Outline
Notes: 1.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTA200N075T
IXTP200N075T
Fig. 1. Output Characteristics
@ 25ºC
200
180
160
140
V
GS
= 10V
9V
8V
7V
350
300
250
V
GS
= 10V
9V
8V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
120
100
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5V
6V
I
D
- Amperes
200
150
100
50
5V
0
0
1
2
3
4
5
6
6V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
V
GS
= 10V
9V
8V
7V
2.6
2.4
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 200A
I
D
= 100A
I
D
- Amperes
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
5V
6V
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value
vs. Drain Current
2.6
2.4
2.2
T
J
= 175ºC
120
100
V
GS
= 10V
15V
- - - -
140
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-263 (7-Lead)
R
DS(on)
- Normalized
I
D
- Amperes
2
1.8
1.6
1.4
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
1.2
1
0.8
0
50
100
150
200
250
T
J
= 25ºC
20
0
300
350
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA200N075T
IXTP200N075T
Fig. 7. Input Admittance
300
270
240
210
T
J
= - 40ºC
25ºC
150ºC
160
T
J
= - 40ºC
140
120
Fig. 8. Transconductance
25ºC
g
f s
- Siemens
I
D
- Amperes
180
150
120
90
60
30
0
3
3.5
4
4.5
5
5.5
6
6.5
7
100
80
60
40
20
0
0
50
100
150
200
250
300
350
150ºC
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
8
250
7
10
9
V
DS
= 38V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 25ºC
1
1.1
1.2
1.3
1.4
200
150
100
50
T
J
= 150ºC
6
5
4
3
2
1
0
0.4
0.5
0.6
0.7
0.8
0.9
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1.00
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
C iss
1,000
C oss
Z
(th)JC
- ºC / W
25
30
35
40
0.10
f = 1 MHz
100
0
5
10
15
C rss
20
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA200N075T
IXTP200N075T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
65
60
55
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 38V
70
65
60
T
J
= 25ºC
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 38V
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
I
D
= 50A
50
45
40
35
30
25
20
25
35
45
55
65
75
85
95
105
115
125
I
D
= 25A
55
50
45
40
35
30
25
20
25
30
35
40
45
50
T
J
= 125ºC
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120
110
60
58
57
56
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
95
90
I
D
= 25A
85
57
54
t
r
V
DS
= 38V
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
t
d ( o f f )
- Nanoseconds
90
80
70
60
50
40
30
20
4
6
8
10
12
14
16
18
20
I
D
= 25A
I
D
= 50A
48
45
42
39
36
33
30
27
t
f
- Nanoseconds
t
r
- Nanoseconds
100
51
t
d ( o n )
- Nanoseconds
55
54
53
52
51
50
49
48
25
35
45
55
65
75
85
95
105
115
I
D
= 50A
80
75
70
65
60
t
f
t
d(off)
- - - -
55
50
45
125
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 38V
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
58
57
56
T
J
= 125ºC
95
90
85
150
170
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
300
t
f
V
DS
= 38V
t
d(off)
- - - -
260
T
J
= 125ºC, V
GS
= 10V
t
f
- Nanoseconds
t
f
- Nanoseconds
55
54
53
52
51
50
49
48
25
t
f
V
DS
= 38V
t
d(off)
- - - -
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
80
75
70
65
60
T
J
= 25ºC
55
50
45
R
G
= 5
Ω
, V
GS
= 10V
130
I
D
= 25A
220
110
180
90
I
D
= 50A
70
140
100
50
4
6
8
10
12
14
16
18
20
60
30
35
40
45
50
I
D
- Amperes
R
G
- Ohms
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_200N075T (5V) 6-20-06.xls
