High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTA3N120
IXTP3N120
IXTH3N120
V
DSS
I
D25
R
DS(on)
= 1200V
= 3A
4.5
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
T
C
= 25C
Maximum Ratings
1200
1200
20
30
3
12
3
700
5
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
TO-220AB (IXTP)
G
DS
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
TO-263
TO-220
TO-247
300
260
Features
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
International Standard Packages
High Voltage Package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Blocking Voltage
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1200
2.5
5.0
V
V
Advantages
Easy to Mount
Space Savings
High Power Density
100
nA
25
A
1 mA
4.5
Applications
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
© 2015 IXYS CORPORATION, All Rights Reserved
DS98844F(0515)
IXTA3N120
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
TO-220
TO-247
0.50
0.21
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 4.7 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5
•
I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
1.5
2.6
1100
110
40
17
15
32
18
42
8
21
135
S
1350 pF
pF
ns
ns
ns
ns
nC
nC
nC
0.62 °C/W
°C/W
°C/W
Pins:
1 - Gate
3 - Source
IXTP3N120
IXTH3N120
TO-220 Outline
60 pF
2 - Drain
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 3A, V
GS
= 0V,-di/dt = 100A/s
V
R
= 100V
700
Characteristic Values
Min.
Typ.
Max
3
12
1.5
A
A
V
ns
TO-247 Outline
Note
1: Pulse test, t
300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
1. Gate
2,4. Drain
3. Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTA3N120
IXTP3N120
IXTH3N120
Fig. 1. Output Characteristics @ T
J
= 25ºC
3.0
V
GS
= 10V
7V
2.5
6V
2.0
5
6
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
V
GS
= 10V
7V
I
D
- Amperes
I
D
- Amperes
4
6V
3
1.5
1.0
5V
0.5
2
1
5V
0.0
0
2
4
6
8
10
12
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
3.0
V
GS
= 10V
7V
3.0
Fig. 4. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Junction Temperature
V
GS
= 10V
2.5
6V
2.6
R
DS(on)
- Normalized
2.2
I
D
= 3A
1.8
I
D
= 1.5A
1.4
2.0
I
D
- Amperes
1.5
5V
1.0
1.0
0.5
0.6
0.0
0
5
10
15
20
25
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 1.5A Value
vs. Drain Current
2.6
2.4
2.2
V
GS
= 10V
T
J
= 125ºC
3.0
3.5
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.5
2.0
I
D
- Amperes
T
J
= 25ºC
0
1
2
3
4
5
6
1.8
1.6
1.4
1.2
1.0
0.8
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA3N120
IXTP3N120
IXTH3N120
Fig. 7. Input Admittance
6
7
Fig. 8. Transconductance
T
J
= - 40ºC
5
T
J
= 125ºC
25ºC
- 40ºC
6
5
g
f s
- Siemens
4
25ºC
4
125ºC
3
I
D
- Amperes
3
2
2
1
1
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
1
2
3
4
5
6
7
8
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
9
8
7
6
8
10
V
DS
= 600V
I
D
= 1.5A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
6
5
4
3
2
1
0
4
2
0
0
5
10
15
20
25
30
35
40
45
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Fig.12. Forward-Bias Safe Operating Area
100
f
= 1 MHz
Capacitance - PicoFarads
Ciss
10
R
DS(on)
Limit
25µs
100µs
I
D
- Amperes
1,000
1
1ms
Coss
100
10ms
0.1
Crss
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
0.01
0
5
10
15
20
25
30
35
40
10
100
1,000
10,000
DC
10
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N120
IXTP3N120
IXTH3N120
Fig. 13. Maximum Transient Thermal Impedance
0.7
0.6
Z
(th)JC
- ºC / W
0.5
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1
Pulse Width - Second
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_3N120(4U) 5-06-15-A
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