High Voltage
Power MOSFET
IXTU01N100
IXTY01N100
V
DSS
I
D25
R
DS(on)
=
=
1000V
100mA
80
N-Channel Enhancement Mode
TO-251
(IXTU)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
Maximum Ratings
1000
1000
20
30
100
400
25
-55 ... +150
150
-55 ... +150
V
V
V
V
mA
mA
W
C
C
C
°C
°C
Nm/lb.in.
g
g
TO-252
(IXTY)
D
S
D (Tab)
G
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting force
TO-251
TO-252
300
260
1.13 / 10
0.40
0.35
Features
International Standard Packages
Fast Switching Times
Avalanche Rated
R
ds(on)
HDMOS
TM
Process
Rugged Polysilicon Gate Cell structure
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 25A
V
DS
= V
GS
, I
D
= 25A
V
GS
=
20V, V
DS
= 0V
V
DS
= 0.8 • V
DSS
, V
GS
= 0V
T
J
= 125C
V
GS
= 10V, I
D
= 50mA, Note 1
60
Characteristic Values
Min.
Typ.
Max.
1000
2.0
4.5
V
V
High Power Density
Space Savings
Applications
Level Shifting
Triggers
Solid State Relays
Current Regulators
50
nA
10
A
200
A
80
© 2017 IXYS CORPORATION, All Rights Reserved
DS98812E(9/17)
IXTU01N100
IXTY01N100
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50mA
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50mA
R
G
= 50 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 50mA, Note 1
Characteristic Values
Min.
Typ.
Max.
0.16
54.0
6.9
2.0
12
12
40
28
6.9
1.8
3.0
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5C/W
Dim.
A
A1
b
b1
b2
1. Gate
3. Source
2.Drain
4. Drain
TO-251 Outline
Millimeter
Min.
Max.
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
6.35
2.28
4.57
17.02
8.89
1.91
0.89
2.38
1.14
0.89
1.14
5.46
0.58
0.58
6.22
6.73
BSC
BSC
17.78
9.65
2.28
1.27
Inches
Min. Max.
.086
0.35
.025
.030
.205
.018
.018
.235
.250
.090
.180
.670
.350
.075
.035
.094
.045
.035
.045
.215
.023
.023
.245
.265
BSC
BSC
.700
.380
.090
.050
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 0.75A, -di/dt = 100A/μs,
V
R
= 25V
Characteristic Values
Min.
Typ.
Max.
100 mA
300 mA
1.8
1.5
V
μs
c
c1
D
E
e
e1
H
L
L1
L2
TO-252 AA Outline
A
E
b3
4
A
L3
c2
A1
L4
1
2
3
L1
e
e1
e1
OPTIONAL
b2
A2
L
L2
c
H
0
5.55MIN
1 - Gate
2,4 - Drain
3 - Source
Note 1: Pulse test, t
300s, duty cycle, d
2%.
6.50MIN
4
6.40
2.85MIN
BOTTOM
VIEW
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTU01N100
IXTY01N100
Fig. 1. Output Characteristics @ T
J
= 25 C
200
180
160
V
GS
= 10V
6V
500
450
400
V
GS
= 10V
o
Fig. 2. ExtendedOutput Characteristics @ T
J
= 25 C
o
6V
I
D
- MilliAmperes
I
D
- MilliAmperes
5V
140
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
350
300
250
200
150
100
50
0
0
5
10
15
20
25
30
35
40
45
50
5V
V
DS
- Volts
V
DS
- Volts
o
Fig. 2. Output Characteristics @ T
J
= 125 C
200
180
160
V
GS
= 10V
2.6
6V
2.2
3.0
Fig. 3. R
DS(on)
Normalized to I
D
= 50mA Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- MilliAmperes
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
5V
I
D
= 200mA
1.8
I
D
= 100mA
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.0
Fig. 4. R
DS(on)
Normalized to I
D
= 50mA Value
vs. Drain Current
V
GS
= 10V
Fig. 5. Maximum Drain Current vs. Case Temperature
120
2.6
T
J
= 125 C
o
100
R
DS(on)
- Normalized
2.2
1.8
T
J
= 25 C
o
I
D
- MilliAmperes
80
60
1.4
40
1.0
20
0.6
0
50
100
150
200
250
300
350
400
450
500
0
-50
-25
0
25
50
75
100
125
150
I
D
- MilliAmperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTU01N100
IXTY01N100
Fig. 7. Input Admittance
160
350
140
120
V
DS
= 10V
300
V
DS
= 10V
T
J
= - 40 C
o
Fig. 8. Transconductance
I
D
- MilliAmperes
g
f s
- Siemens
100
80
60
40
20
0
3.2
3.6
4.0
4.4
4.8
5.2
5.6
T
J
= 125 C
T
J
= 25 C
o
o
250
200
150
100
50
0
0
20
40
60
80
100
120
25 C
o
125 C
o
140
160
V
GS
- Volts
I
D
- MilliAmperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
400
350
300
10
9
8
7
V
DS
= 500V
I
D
= 50mA
I
G
= 1mA
Fig. 10. Gate Charge
I
S
- MilliAmperes
V
GS
- Volts
T
J
= 125 C
o
250
200
150
100
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T
J
= 25 C
o
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100
10
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
Ciss
10
Z
(th)JC
- K / W
30
35
40
Coss
1
Crss
f = 1 MHz
1
0
5
10
15
20
25
0.1
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
- Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_01N100(1N) 8-18-05-A
