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JAN1N4148UBC

Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, CERAMIC, UBC-3

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
厂商名称
Microsemi
包装说明
R-CDSO-N3
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-CDSO-N3
元件数量
1
端子数量
3
最高工作温度
200 °C
最低工作温度
-65 °C
最大输出电流
0.2 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
参考标准
MIL-19500
最大重复峰值反向电压
75 V
最大反向恢复时间
0.005 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
DUAL
文档预览
1N4148UBC
Switching Diode
Qualified per MIL-PRF-19500/116
DESCRIPTION
This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction
for military grade products per MIL-PRF-19500/116.
This
small low capacitance diode, with
very fast switching speeds, is featured in a surface mount UBC package and is available in
different polarities. Microsemi also offers a variety of other switching/signal diodes.
Compliant
Qualified Levels:
JAN, JANTX, and
JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Surface mount equivalent of popular JEDEC registered 1N4148 number.
Very low capacitance.
Very fast switching speeds with minimal reverse recovery times.
Unidirectional as well as doubling and common cathode polarities are available.
JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116.
(See
part nomenclature
for all available options.)
RoHS compliant by design.
UBC Package
Also available in:
UB package
(surface mount)
1N4148UB
APPLICATIONS / BENEFITS
High frequency data lines.
Low-profile ceramic bodied surface mount package with a ceramic lid (see package illustration).
RS-232 & RS–422 interface networks.
Ethernet 10 Base T.
Switching core drivers.
LAN.
Computers.
UB2 package
(2-Pin surface mount)
1N4148UB2
DO-35 package
(axial-leaded)
1N4148-1
DO-213AA package
(MELF surface mount)
1N4148UR-1
MAXIMUM RATINGS
@ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
(1)
Thermal Resistance Junction-to-Solder Pad
Maximum Breakdown Voltage
Working Peak Reverse Voltage
(2)
Average Rectified Current @ T
A
= 75 ºC
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
NOTES:
1. See
Figure 2
for thermal impedance curves.
2. See
Figure 1
for derating.
Symbol
T
J
& T
STG
R
ӨJA
R
ӨJSP
V
(
BR)
V
RWM
I
O
I
FSM
Value
-65 to +200
325
120
100
75
200
2
Unit
o
C
o
C/W
o
C/W
V
V
mA
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0281-4, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 1 of 5
1N4148UBC
MECHANICAL and PACKAGING
CASE: Ceramic with a ceramic lid.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
1N4148
UBC
CC
Polarity
CC = Common Cathode
D = Doubler
Blank = Unidirectional
Ceramic Lid Surface Mount
Doubler
Common Cathode
Unidirectional
Symbol
I
R
I
O
t
rr
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
T4-LDS-0281-4, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 2 of 5
1N4148UBC
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
FORWARD FORWARD REVERSE FORWARD
VOLTAGE VOLTAGE RECOVERY RECOVERY
V
F2
@
TIME
V
F1
@
TIME
t
rr
t
fr
I
F
=10mA
I
F
=100mA
(Note 1)
(Note 2)
V
V
ns
ns
REVERSE
CURRENT
I
R1
@ 20 V
REVERSE
CURRENT
I
R2
@ 75 V
µA
REVERSE
CURRENT
I
R3
@ 20 V
T
A
=150
o
C
µA
REVERSE
CURRENT
I
R4
@ 75 V
T
A
=150
o
C
µA
CAPACI-
TANCE
C
(Note 3)
pF
CAPACI-
TANCE
C
(Note 4)
pF
nA
0.8
1.2
5
20
25
0.5
35
75
4.0
2.8
NOTE 1:
I
F
= I
R
= 10 mA, R
L
= 100 Ohms + 5 %.
NOTE 2:
I
F
= 50 mA.
NOTE 3:
V
R
= 0 V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
NOTE 4:
V
R
= 1.5V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
T4-LDS-0281-4, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 3 of 5
1N4148UBC
GRAPHS
DC Operation Maximum Io Rating (mA)
T
A
(ºC) (Ambient)
FIGURE 1 –
Temperature – Current Derating
Theta (°C/W)
Time (s)
FIGURE 2
– Thermal Impedance
T4-LDS-0281-4, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 4 of 5
1N4148UBC
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Min
.046
.115
.085
.022
.017
Dimensions
inch
millimeters
Max
Min
Max
.071
1.17
1.80
.128
2.92
3.25
.108
2.16
2.74
.128
3.25
.108
2.74
.038
0.56
0.96
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
inch
millimeters
Min
Max
Min
Max
.036
.040
.091
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
0.203
.012
0.305
.022
0.559
Note
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0281-4, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 5 of 5
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