• 1N5711-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
•
•
•
•
PER MIL-PRF-19500/444
1N5712-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
SCHOTTKY BARRIER DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current: 5711 types
2810,5712 & 6858 types
6857 TYPE
Derating:
all types:
:33mA dc@ TL = +130°C, L = 3/8”
:75mA dc@ TL = +110°C, L = 3/8”
:75mA dc@ TL = +70°C, L = 3/8”
Derate to 0 (zero)mA@+150°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
V
MAXIMUM
CAPACITANCE @
R
= 0 VOLTS
f = 1.0 MH
Z
V
BR
@ 10
µ
A
VOLTS
DSB2810
1N5711,-1
DSB5712
1N5712-1
1N6857-1
1N6858-1
20
70
20
20
20
70
V @ 1 mA
F
VOLTS
0.41
0.41
0.41
0.41
0.35
0.36
V @I
F
F
MILLIAMPS
1.0@35
1.0@15
1.0@35
1.0@35
0.75@35
0.65@15
I @V
R
R
VOLTS
15
50
16
16
16
50
C
T
PICO FARADS
2.0
2.0
2.0
2.0
4.5
4.5
1
1
1
1
2
2
ESDS
CLASS
nA
100
200
150
150
150
200
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC): 250
˚C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 40
˚C/W maximum
POLARITY:
Cathode end is banded.
NOTE:
Effective Minority Carrier Lifetime (
τ
) is 100 Pico Seconds
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
MOUNTING POSITION:
Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N5711, 1N5712, 1N6857, 1N6858
DSB5712
and
DSB2810
INCLUDING -1 VERSIONS
100
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
0
.2
.4
.6
.8
1.0
1.2
10,000
10
1000
1.0
100
.1
10
.01
1.0
0
5.0
10
15
20
25
30
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
DSB5712 and DSB2810
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
50
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
100,000
RD – DYNAMIC RESISTANCE (!!)
0
10
20
30
40
50
60
1000
10
5
10,000
1000
100
1
.5
1
10
.1
.05
10
.01
0
.2
.4
.6
.8
1.0
1.2
1
1
.1
1.0
10
100
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
1N5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at
Various Temperatures.
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
嵌入式系统
