首页 > 器件类别 > 分立半导体 > 二极管

JAN1N6130

ESD Suppressors / TVS Diodes Bi-Directional TVS

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
JAN1N6130 在线购买

供应商:

器件:JAN1N6130

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
包装说明
O-XALF-W2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最小击穿电压
90.25 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-XALF-W2
JESD-609代码
e0
最大非重复峰值反向功率耗散
500 W
元件数量
1
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
3 W
认证状态
Qualified
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Lead (Sn/Pb)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
1N6103A – 1N6137A
Voidless Hermetically Sealed Bidirectional
Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
Available on
commercial
versions
DESCRIPTION
This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage
Suppressors (TVS) is military qualified to MIL-PRF-19500/516 and is ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage
selection from 5.7 to 152 volts with a 500 watt rating for a 10/1000
µs
pulse. They are very robust
in hard-glass construction and use internal “Category
1”
metallurgical bonds. These devices are
available as both a non-suffix part and an “A” version providing different voltage tolerances as
described in the nomenclature section. These devices are also available in a surface mount MELF
package configuration.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualified versions are available per MIL-PRF-19500/516.
*JANS available for 1N6103(A) thru 1N6118(A) per MIL-PRF-19500/516 as well as further options
for screening in reference to MIL-PRF-19500 for all others in this series.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
Package
(surface mount)
1N6103US – 1N6137US
APPLICATIONS / BENEFITS
Military and other high-reliability applications.
Extremely robust construction.
Extensive range in working peak “standoff” voltage (V
WM
) from 5.7 to 152 volts.
500 watt peak pulse power (P
PP
) for a 10/1000
µs
pulse.
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively.
Protection from the secondary effects of lightning per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@
T
A
= 25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Peak Pulse Power @ 25 ºC (10/1000
µs)
o (1)
Steady-State Power @ T
L
= 75 C
o (2)
Steady-State Power @ T
A
= 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes:
1.
2.
o
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
D
P
D
df
T
SP
Value
-55 to +175
33.5
500
3.0
2.0
0.01
260
Unit
o
C
C/W
W
W
W
%
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
At 3/8 inch lead length from body.
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where maximum rated T
J
is not exceeded (also see
figure 4).
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 1 of 6
1N6103A – 1N6137A
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only.
MARKING: Body paint and part number.
POLARITY: No polarity marking for these bidirectional TVSs.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: Approximately 750 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
Applicable to entire series:
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N6103
A
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Voltage Tolerance
A = Standard
Blank =5% higher V
C
, 5% lower
min. V
(BR)
and 5% lower I
PP
Applicable to 1N6103(A) thru 1N6118(A) only:
JANS
Reliability Level
JANS = JANS Level
JEDEC type number
See
Electrical Characteristics
table
1N6103
A
Voltage Tolerance
A = Standard
Blank =5% higher V
C
, 5% lower
min. V
(BR)
and 5% lower I
PP
Applicable to 1N6119(A) thru 1N6137(A) only:
MSP
Reliability Level
MSP (reference JANS)
JEDEC type number
See
Electrical Characteristics
table
1N6119
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolerance
A = Standard
Blank =5% higher V
C
, 5% lower
min. V
(BR)
and 5% lower I
PP
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 2 of 6
1N6103A – 1N6137A
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as standoff voltage.
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Symbol
V
(
BR)
V
WM
I
D
V
C
P
PP
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
(Note 1)
V
(BR)
@ I
(BR)
Volts
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
mA
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
RATED
STANDOFF
VOLTAGE
V
WM
V
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
86.6
91.2
98.8
114.0
121.6
136.8
152.0
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
µA
50
20
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAXIMUM
CLAMPING
VOLTAGE
(Note 1)
V
C
@ I
PP
Volts
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
MAXIMUM
PEAK PULSE
CURRENT
(Note 1)
I
PP
Amps
44.6
41.3
37.3
34.5
32.0
29.6
27.5
23.8
22.4
19.9
18.0
16.4
15.0
13.4
12.0
10.9
10.0
9.3
8.5
7.7
7.1
6.5
5.9
5.1
4.8
4.4
4.0
3.6
3.3
3.0
2.8
2.4
2.3
2.0
1.8
MAXIMUM
TEMP.
COEF. OF
V
(
BR)
α
V(BR)
o
%/ C
.06
.06
.06
.07
.07
.07
.08
.08
.08
.085
.085
.085
.09
.09
.09
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.110
.110
INDUSTRY
TYPE
NUMBER
(Note 1)
†1N6103A
†1N6104A
†1N6105A
†1N6106A
†1N6107A
†1N6108A
†1N6109A
†1N6110A
†1N6111A
†1N6112A
†1N6113A
†1N6114A
†1N6115A
†1N6116A
†1N6117A
†1N6118A
1N6119A
1N6120A
1N6121A
1N6122A
1N6123A
1N6124A
1N6125A
1N6126A
1N6127A
1N6128A
1N6129A
1N6130A
1N6131A
1N6132A
1N6133A
1N6134A
1N6135A
1N6136A
1N6137A
† Also available in JANS qualification per MIL-PRF-19500/516.
Notes:
1. Part number without the A suffix has 5% higher V
C
, 5% lower minimum V
(BR)
, and 5% lower I
PP
.
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 3 of 6
1N6103A – 1N6137A
GRAPHS
Peak Pulse Power (P
PP
)
Pulse Time (t
p
)
FIGURE 1
Peak Pulse Power vs. Pulse Time
Max Peak Pulse Power (P
PP
) or current (I
PP
)
in percent of Max Ratings
Junction Temperature (T
J
) in °C
FIGURE 2
Peak Pulse Power vs T
J
(prior to impulse)
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 4 of 6
1N6103A – 1N6137A
GRAPHS
Pulse Current (I
PP)
in Percent of I
PP
Time (t) in milliseconds
FIGURE 3
Pulse Wave Form
DC Operation Maximum Rating (W)
T
A
(°C) (Ambient)
FIGURE 4
Temperature-Power Derating Curve
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 5 of 6
查看更多>
2015电赛的相关资料,不看不会后悔的
2015电赛的相关资料,不看不会后悔的 2015电赛的相关资料,不看不会后悔的 这些在网上都...
刘小肆Lucky 电子竞赛
疯壳AI开源无人机串口(视觉数据获取)
OPENMV 模组简介 OPENMV是一个开源、低成本、功能强大的机器视觉模块。以STM3...
fengke 创意市集
请教这两个语句一样吗?
来自EEWORLD合作群:arm linux fpga 嵌入0(49900581)群主:wangkj...
IC-leguan FPGA/CPLD
stm32下载到一半卡住了
问题描述:stm32下载到一半卡住了,keil转圈圈过一会好了,显示程序下载完成 applica...
THS3201 stm32/stm8
【MSPM0L1306 LaunchPad】 2 GUI Composer GUI 玩板子
【MSPM0L1306 LaunchPad】 2 GUI Composer GU...
damiaa MSPM0 MCU
430串口连接电平问题
各位大侠: 我设计一块线路板,里面有2个cpu, 一个是430f169,供电电源3.3V, 还有...
dingsw8 微控制器 MCU
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消