首页 > 器件类别 > 半导体 > 分立半导体

JAN1N753ATR-1

3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

器件类别:半导体    分立半导体   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
文档预览
• 1N746A-1 THRU 1N759-1 AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/127
• 1N4370A-1 THRU 1N4372A-1 AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/127
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
1N746
thru
1N759A
and
1N746A-1
thru
1N759A-1
and
1N4370
thru
1N4372A
and
1N4370A-1
thru
1N4372A-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ @ 1ZT
(NOTE 2)
VOLTS
1N4370A
1N4371A
1N4372A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1N753A
1N754A
1N755A
1N756A
1N757A
1N758A
1N759A
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
12.0
ZENER
TEST
CURRENT
1ZT
MAXIMUM
ZENER
IMPEDANCE
(NOTE 3)
ZZT@ 1ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
OHMS
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
30
µ
A
MAXIMUM
REVERSE CURRENT
IR@ VR
MAXIMUM
ZENER
CURRENT
1
ZM
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
5.0
6.0
7.0
8.0
9.0
mA
155
140
125
120
110
100
90
85
75
70
65
60
55
50
45
40
35
100
60
30
5
3
2
2
5
5
5
5
2
2
1
1
1
1
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
NOTE 1
NOTE 2
NOTE 3
Zener voltage tolerance on "A" suffix is +5%. No Suffix denotes + 10% tolerance,
"C" suffix denotes + 2% tollerance and "D" suffix denotes + 1% tolerance.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
13
1N746
1N4370
Pd, Rated Power
Dissipation (mW)
500
400
300
200
100
0
0
25
50
thru
and
thru
INCLUDING -1 VERSIONS
1N759A
1N4372A
75
100
125
150
175
TL, Lead temperature (C°) 3/8” from body
POWER DERATING CURVE
1
00
50
ZENER IMPEDANCE Z
ZT
(OHMS)
20
10
5
2
1
4
6
10
20
40
60
100
FIGURE 3
operating current (mA)
ZENER IMPEDANCE VS. OPERATING CURRENT
14
查看更多>
ADS805E调试不出来
ADS805E调试不出来,按照DC-COUPLED 的电路连接的,即使输入直流量,每个时钟的下降沿数...
lt66ds 模拟与混合信号
新版即将来临,庆祝吧!!
早上来上网就开始发现版面有点跟昨天不一样啦,具体哪不一样说不出来,只能怪我平常不注意观察吧, 新版即...
Sur TI技术论坛
FPGA器件的在线配置方法
摘要: 介绍基于SRAM LUT结构的FPGA器件的上电配置方式;着重介绍采用计算机串口下载配置数...
kandy2059 FPGA/CPLD
基于DSP的Bluetooth嵌入式系统应用
基于DSP的Bluetooth嵌入式系统应用 摘要:以TI的TMS302VC54x数字信号处理器...
dj0930 嵌入式系统
TI CC254X 主从一体DEMO
求助大家,需要TI官方的CC254X主从一体的DEMO。在TI的官网没有找到,求路过的大神给一个连接...
ma_yunfei 无线连接
51单片机
51单片机中程序模块化之后在某个.c文件中定义了一个静态变量static unsigned char...
付经辉 51单片机
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消