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JANHCA1N5314

Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, HERMETIC SEALED, DIE-2

器件类别:分立半导体    二极管   

厂商名称:Compensated Devices Inc

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器件参数
参数名称
属性值
厂商名称
Compensated Devices Inc
包装说明
S-XXUC-N2
Reach Compliance Code
unknown
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
CURRENT REGULATOR DIODE
JESD-30 代码
S-XXUC-N2
最大限制电压
2.9 V
元件数量
1
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
认证状态
Not Qualified
参考标准
MIL-19500/463G
标称调节电流 (Ireg)
4.7 mA
表面贴装
YES
技术
FIELD EFFECT
端子形式
NO LEAD
端子位置
UNSPECIFIED
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The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 2 July 2004.
INCH-POUND
MIL-PRF-19500/463G
2 April 2004
SUPERSEDING
MIL-PRF-19500/463F
24 June 2003
* PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1
THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,
1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:
a. PT = 500 mW (DO-7) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).
b. PT = 500 mW (DO-213AB) at TEC = +125°C. (Derate to 0 at +175°C).
c. -65°C
Tj
+175°C; -65°C
TSTG
+175°C.
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)
and as follows, (nominally .22 mA dc
IP
4.70 mA dc):
a. R
ΘJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).
b. R
ΘJEC
= 100°C/W (maximum) junction to end-caps (DO-213AB).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/463G
DO-7
Symbol
BD
BL
LD
LL
LL
1
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.060
.107
1.52
2.72
.120
.300
3.05
7.62
.018
.023
0.46
0.58
1.000
1.500
25.40 38.10
0.050
1.27
Notes
3
3
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The minimum body diameter shall be maintained over .15 inch (0.38 mm) inch of body length.
4. The specified lead diameter applies in the zone between .050 inch (1.27 mm) and
the end of the lead. Outside of this zone the lead diameter shall not exceed LD.
5. Both leads shall be within the specified dimension.
6. See 3.3 for L and TL definitions.
7. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 1. Physical dimensions (DO-7).
2
MIL-PRF-19500/463G
DO-213AB
Symbol
BD
BL
ECT
S
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.094
.105
2.39
2.67
.189
.205
4.80
5.21
.016
.022
0.41
0.55
.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 2. Physical dimensions (DO-213AB).
3
MIL-PRF-19500/463G
Symbol
A
B
Design data
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.012
.014
0.305 0.355
.026
.030
0.660 0.762
Metallization:
Top: (Anode) ......... Al.
Back: (Cathode) .... Au.
Al thickness ............ 25000 Å Min.
Gold thickness ........ 4000 Å Min.
Chip thickness ....... .010 ±.002 inch (0.254 ±0.0508 mm).
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
FIGURE 3. Physical dimensions, JANHCA and JANKCA die.
4
MIL-PRF-19500/463G
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as specified in
MIL-PRF-19500 and as follows:
IP
L
Pinch-off current. IP Pinch-off current is defined as the regulator current at specified test voltage, VS.
- Lead thermal path length. Lead thermal path length is the distance from the end of the diode body to the
point of lead-temperature measurement. For purposes of this measurement, the same heat sinking at the
same distance from the diode body shall be applied to each lead. No heat sinking shall occur between the
diode body and the point of lead-temperature measurement. This measurement may be made from either
end of the diode body. (The diode body includes slugs, if any, but does not include braze fillet, paint, etc.,
within the zone of uncontrollable lead diameter.)
- Steady-state power dissipation. Power dissipated under steady-state conditions.
-
- Lead temperature. Lead temperature is the temperature of the lead measured at the lead thermal path
length, L. Lead temperature shall be measured by means of a No. 30 copper-constantan thermocouple, or
equivalent. All reference to TL is TEC for "UR" devices.
VPOV - Peak operating voltage. Peak operating voltage is the maximum voltage that shall be applied to the device.
PD
TL
5
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