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JANKCA1N4102

Zener Diode, 8.7V V(Z), 5%, 0.25W, Silicon, Unidirectional, DIE-2

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
DIE
包装说明
S-XXUC-N2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
200 Ω
JESD-30 代码
S-XXUC-N2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.25 W
认证状态
Qualified
参考标准
MIL-19500/435F
标称参考电压
8.7 V
表面贴装
YES
技术
ZENER
端子面层
Tin/Lead (Sn/Pb)
端子形式
NO LEAD
端子位置
UNSPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
0.25 mA
Base Number Matches
1
文档预览
• 1N4099-1 THRU 1N4135-1 AVAILABLE IN
JAN, JANTX, JANTXV AND
JANS
PER MIL-PRF-19500/435
• LOW CURRENT OPERATION AT 250
µ
A
• LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
• METALLURGICALLY BONDED
1N4099 thru 1N4135
and
1N4099-1 thru 1N4135-1
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage at 200 mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ @ lZT
(Note 1)
VOLTS
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1N4120
1N4121
1N4122
1N4123
1N4124
1N4125
1N4126
1N4127
1N4128
1N4129
1N4130
1N4131
1N4132
1N4133
1N4134
1N4135
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 2)
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
200
200
250
250
300
300
400
500
700
700
800
1000
1200
1500
MAXIMUM REVERSE
LEAKAGE
CURRENT
lR @ VR
MAXIMUM
NOISE
DENSITY
ND @ lZT
MAXIMUM
ZENER
CURRENT
lZM
mA
56
51
46
44
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
14
13
12
11
9.8
8.9
8.1
7.5
6.7
6.4
6.1
5.6
5.1
4.6
4.4
4.2
3.8
µ
A
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
µ
A
10
10
1.0
1.0
1.0
1.0
.05
.05
.05
.05
.05
.05
.05
.05
.05
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
VOLTS
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.46
21.28
22.80
25.08
27.38
29.65
32.65
35.75
38.76
42.60
45.60
47.10
51.68
57.00
62.32
66.12
69.16
76.00
µ
V/
Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
ANY.
NOTE 1
The JEDEC type numbers shown above have a Zener voltage tolerance of + 5% of
the nominal Zener voltage. Vz is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C. A “C” suffix denotes a + 2%
tolerance and a “D” suffix denotes a + 1% tolerance.
Zener impedance is derived by superimposing on lZT, A 60 Hz rms a.c. current
equal to 10% of lZT (25
µ
A a.c.).
NOTE 2
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
33
0JL, Junction to Lead
Thermal Resistance (°C/W)
thru
1N4135
INCLUDING -1 VERSIONS
1N4099
400
300
200
100
0
0.2
0.4
0.6
0.8
1.0
L, lead Length to Heat Sink (INCHES)
FIGURE 2
TYPICAL THERMAL RESISTANCE
1000
500
400
300
200
ZENER IMPEDANCE ZZT (OHMS)
100
50
40
30
20
10
5
4
3
2
1
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT I
ZT
(mA)
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
34
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