JANS1N6331,JANS1N6331 pdf中文资料,JANS1N6331引脚图,JANS1N6331电路-Datasheet-电子工程世界

文档预览

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 January 2007.

INCH-POUND

MIL-PRF-19500/533H

18 October 2006

SUPERSEDING

MIL-PRF-19500/533G

21 July 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6355US,

PLUS C AND D TOLERANCE SUFFIX,

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for microminiature 500 mW, silicon,

metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1 percent

(D). Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (DO-35) and figure 2 (surface mount).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.11 herein) and

as follows:

= 500 mW (DO-35) at T

= + 75°C, L = .375 inch (9.53 mm); both ends of case or diode body to

heat sink at L = .375 inch (9.53 mm). (Derate I

to 0.0 mA dc at +175°C).

TEC

= 500 mW (surface mount) at T

= 125°C. (Derate to 0 at 175°C).

TPCB

= 500 mW, T

= +55°C.

-65°C

≤

+175°C; -65°C

≤

STG

≤

+175°C.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at

http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/533H

* 1.4 Primary electrical characteristics. Primary electrical characteristic are shown in maximum and primary test

ratings (see 3.11 herein) and as follows:

2.4 V dc

≤

200 V dc (nominal).

1N6309D through 1N6355D, and US devices are 1 percent voltage tolerance.

1N6309C through 1N6355C, and US devices are 2 percent voltage tolerance.

1N6309 through 1N6355, and US devices are 5 percent voltage tolerance.

L = .375 inch (9.53 mm) (DO-35) non-surface mount.

(1) 1N6309 – 1N6320, R

= 150°C/W (maximum).

(2) 1N6321 – 1N6355, R

= 95.5°C/W (maximum).

= 50°C/W (maximum) at L = 0 inch non-surface mount.

Surface mount (US).

(1) 1N6309US – 1N6320US, R

JEC

= 35°C/W (maximum).

(2) 1N6321US – 1N6355US, R

JEC

= 21°C/W (maximum).

= 240°C/W junction to ambient including PCB see note (1).

(1) See figures 3, 4, 5, 6, and 7 for derating curves. T

= +75°C for both axial and MELF (US) on printed circuit

board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .067 inch (1.70

mm) x .105 inch (2.67 mm); pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (7.62 mm) x 1 inch

(25.4 mm) long, axial lead length L

≤

.187 inch (≤ 4.76 mm); R

θJA

with a defined thermal resistance condition

included is measured at IZ = as defined in the characteristics and ratings table herein.

MIL-PRF-19500/533H

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil.

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

................................ 2 percent voltage tolerance.

................................ 1 percent voltage tolerance.

................................ End-cap.

................................ Temperature of end-cap.

................................ Unleaded square end-cap.

MIL-PRF-19500/533H

Ltr

Inches

Min

.060

.120

.018

1.000

Dimensions

Millimeters

Min

1.52

3.05

0.46

25.40

Max

2.29

5.08

0.56

38.10

1.27

Notes

Max

.090

.200

.022

1.500

.050

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Lead diameter not controlled in this zone to allow for flash. Lead finish build-up and minor

irregularities other than slugs.

4. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

5. The BL dimension shall include the entire body including slugs.

* FIGURE 1. Physical dimensions (DO-35).

MIL-PRF-19500/533H

Symbol

Inches

Min

ECT

.070

.019

.165

Dimensions

Millimeters

Min

1.78

0.48

4.19

Max

2.16

0.71

4.95

Max

.085

.028

.195

.003 min

0.08 min

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

* FIGURE 2. Physical dimensions surface mount device, “US”.

参数对比

与JANS1N6331相近的元器件有：JANS1N6325、JANS1N6324、JANS1N6330、JANS1N6332、JANS1N6326、JANS1N6327、JANS1N6329、JANS1N6333。描述及对比如下：

型号	JANS1N6331	JANS1N6325	JANS1N6324	JANS1N6330	JANS1N6332	JANS1N6326	JANS1N6327	JANS1N6329	JANS1N6333
描述	Zener Diode, 20V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 10V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 18V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 22V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 13V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 16V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN	Zener Diode, 24V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc	Bkc Semiconductors Inc
包装说明	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow	unknow	unknow	unknow	unknow
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE
最大动态阻抗	18 Ω	7 Ω	6 Ω	14 Ω	20 Ω	7 Ω	8 Ω	12 Ω	24 Ω
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 代码	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2	2
最高工作温度	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
最大功率耗散	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
参考标准	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F	MIL-19500/533F
标称参考电压	20 V	11 V	10 V	18 V	22 V	12 V	13 V	16 V	24 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	ZENER	ZENER	ZENER	ZENER	ZENER	ZENER	ZENER	ZENER	ZENER
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大电压容差	5%	5%	5%	5%	5%	5%	5%	5%	5%
工作测试电流	6.2 mA	20 mA	20 mA	7 mA	5.6 mA	20 mA	9.5 mA	7.8 mA	5.2 mA