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JANTX1N5647ATR

Trans Voltage Suppressor Diode, 1500W, 33.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
DO-13
包装说明
O-MALF-W2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
最大击穿电压
41 V
最小击穿电压
37.1 V
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-202AA
JESD-30 代码
O-MALF-W2
JESD-609代码
e0
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
METAL
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1 W
认证状态
Not Qualified
参考标准
MIL-19500
最大重复峰值反向电压
33.3 V
表面贴装
NO
技术
AVALANCHE
端子面层
TIN LEAD
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/500
DEVICES
LEVELS
* 1N5629 thru 1N5665
1N5629A thru 1N5665A
JAN
JANTX
JANTXV
*
Commercial only
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru 1N5665A are
JEDEC registered selections for unidirectional devices. All have the same high Peak Pulse
Power rating of 1500 W with extremely fast response times. They are also available in
military qualified selections as described in the Features section herein. They are most
often used for protecting against transients from inductive switching environments, induced
RF effects, or induced secondary lightning effects as found in lower surge levels of
IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical
systems. Since their response time is virtually instantaneous, they can also protect from
ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Unidirectional TVS series for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 5 V to 171 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available for the tighter tolerance “A”
suffix devices per MIL-PRF-19500/500 by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N5629A, etc.
For bidirectional TVS in the same DO-13 package, see separate data sheet for the
1N6036 – 1N6072A series (also military qualified)
Surface mount equivalent packages also available as SMCJ5.0 - SMCJ170CA or
SMCG5.0 – SMCG170CA in separate data sheet (consult factory for other surface
mount options)
Plastic axial-leaded equivalents available in the 1N6267 – 1N6303A series in
separate data sheet
T4-LDS-0096 Rev. 2 (101572)
DO-13 (DO-202AA)
Page 1 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts for 10/1000
μs
with repetition rate of 0.01% or less* at lead temperature (T
L
) 25
o
C (see Figs 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +175
o
C
THERMAL RESISTANCE: 50
o
C/W junction to lead at 0.375 inches (10 mm) from body or 110
o
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25 mm
DC Power Dissipation*: 1 Watt at T
L
+125
o
C 3/8” (10 mm) from body (see derating in Fig 3 and note below)
Forward surge current: 200 Amps for 8.3ms half-sine wave at T
A
= +25
o
C
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case and polarity indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated
standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
T4-LDS-0096 Rev. 2 (101572)
Page 2 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS @ T
A
= 25
o
C
JEDEC
Type
No.*
1N5629
1N5629A
1N5630
1N5630A
1N5631
1N5631A
1N5632
1N5632A
1N5633
1N5633A
1N5634
1N5634A
1N5635
1N5635A
1N5636
1N5636A
1N5637
1N5637A
1N5638
1N5638A
1N5639
1N5639A
1N5640
1N5640A
1N5641
1N5641A
1N5642
1N5642A
1N5643
1N5643A
1N5644
1N5644A
1N5645
1N5645A
1N5646
1N5646A
1N5647
1N5647A
1N5648
1N5648A
1N5649
1N5649A
1N5650
1N5650A
1N5651
1N5651A
1N5652
1N5652A
1N5653
1N5653A
1N5654
1N5654A
1N5655
1N5655A
1N5656
1N5656A
1N5657
1N5657A
1N5658
1N5658A
1N5659
1N5659A
1N5660
1N5660A
Breakdown
Voltage
V
(BR)
@ I
(BR)
Min.
V
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.5
9.9
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
Breakdown
Current
I
(BR)
mA
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max.
V
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
Rated
Standoff
Voltage
V
WM
V
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
Maximum
Standby
Current
I
D
@ V
WM
μA
1000
1000
500
500
200
200
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
V
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
Maximum
Peak Pulse
Current
I
PP
A
139
143
128
132
120
124
109
112
100
103
93
96
87
90
79
82
68
71
64
67
56.5
59.5
51.5
54
47
49
43
45
38.5
40
34.5
36
31.5
33
29
30
26.5
28
24
25.3
22.2
23.2
20.4
21.4
18.6
19.5
16.9
17.7
15.3
16.3
13.9
14.6
12.7
13.3
11.4
12.0
10.4
11.0
9.5
9.9
8.7
9.1
8.0
8.4
Maximum
Temperature
Coefficient of
V
(BR)
α
V(BR)
%/
o
C
.057
.057
.061
.061
.065
.065
.068
.068
.073
.073
.075
.075
.078
.078
.081
.081
.084
.084
.086
.086
.088
.088
.090
.090
.092
.092
.094
.094
.096
.096
.097
.097
.098
.098
.099
.099
.100
.100
.101
.101
.101
.101
.102
.102
.103
.103
.104
.104
.104
.104
.105
.105
.105
.105
.106
.106
.106
.106
.107
.107
.107
.107
.107
.107
T4-LDS-0096 Rev. 2 (101572)
Page 3 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS @ T
A
= 25
o
C
JEDEC
Type
No.*
1N5661
1N5661A
1N5662
1N5662A
1N5663
1N5663A
1N5664
1N5664A
1N5665
1N5665A
Breakdown
Voltage
V
(BR)
@ I
(BR)
Min.
V
135
143
144
152
153
162
162
171
180
190
Max.
V
165
158
176
168
187
179
198
189
220
210
Breakdown
Current
I
(BR)
Rated
Standoff
Voltage
V
WM
V
121
128
130
136
138
145
146
154
162
171
Maximum
Standby
Current
I
D
@ V
WM
μA
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
V
215
207
230
219
244
234
258
246
287
274
Maximum
Peak Pulse
Current
I
PP
A
7.0
7.2
6.5
6.8
6.2
6.4
5.8
6.1
5.2
5.5
Maximum
Temperature
Coefficient of
V
(BR)
α
V(BR)
%/
o
C
.108
.108
.108
.108
.108
.108
.108
.108
.108
.108
mA
1
1
1
1
1
1
1
1
1
1
NOTE 1:
A TVS is normally selected according to the rated “Standoff Voltage” V
WM
that should be equal to or
greater than the dc or continuous peak operating voltage level.
NOTE 2:
Also available in military qualified types with a JAN, JANTX, or JANTXV prefix
.
SYMBOLS & DEFINITIONS
Symbol
V
WM
V
(BR)
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1
above.)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
o
C
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when
subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is
the combination of voltage rise due to both the series resistance and thermal rise and positive
temperature coefficient (α
V(BR)
)
Peak Pulse Current: The peak current during the impulse (See Figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
Standby Current: The current at the standoff voltage (V
WM
)
Breakdown Current: The current used for measuring Breakdown Voltage (V
(BR)
)
V
C
I
PP
P
PP
I
D
I
(BR)
T4-LDS-0096 Rev. 2 (101572)
Page 4 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
GRAPHS
100
Peak Pulse Power (P
PP
) in kW
Exponential wave-form
(See FIG. 2)
Pulse current (I
P
) in percent of I
PP
10
Square-wave pulse
Peak Value
I
PP
Peak Value
I
PP
1.0
Pulse time duration (tp) is
defined as that point
where I
P
decays to 50% of
peak value (I
PP
).
0.1Kw
100ns
1μs
10μs
100μs
1ms
10ms
Pulse Time (tp )
FIG. 1 –
Non-repetitive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
Time (t) in milliseconds
FIG. 2
Pulse wave form for exponential surge
T
L
– lead Temperature
FIG. 3
Steady-state power derating curve
Peak Pulse Power (P
PP
) or current I (surge)
in percent of 25
o
C rating
Steady-state power dissipation (watts)
T
A
Ambient Temperature
o
C
FIG. 4
Derating Curve
T4-LDS-0096 Rev. 2 (101572)
Page 5 of 6
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